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JPS6465841A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS6465841A
JPS6465841A JP22208887A JP22208887A JPS6465841A JP S6465841 A JPS6465841 A JP S6465841A JP 22208887 A JP22208887 A JP 22208887A JP 22208887 A JP22208887 A JP 22208887A JP S6465841 A JPS6465841 A JP S6465841A
Authority
JP
Japan
Prior art keywords
layer
resist
patterned
metallic layer
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22208887A
Other languages
Japanese (ja)
Inventor
Shuzo Oshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22208887A priority Critical patent/JPS6465841A/en
Publication of JPS6465841A publication Critical patent/JPS6465841A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To improve a resolution and to reduce the density of pinholes by a method wherein, after the uppermost resist layer of two layers of resist layers is patterned, a metallic layer formed on the exposed surface of the lower resist layer is left and a layer to be processed is patterned using the metallic layer as a mask. CONSTITUTION:A layer 2 to be processed consisting of Al, a lower resist 3 consisting of OFPR-800 and an upper resist 4 consisting of PMMA are formed in order on an Si substrate 1. Prescribed resist patterns 4b are formed by an electron beam exposure method. Al is deposited thereon to form a metallic layer 8. Then, the patterns 4b and the layer 8 are lifted off using an acetone ultrasonic wave to leave a patterned metallic layer 8a alone on the resist 3. Then, the layer 3 is etched away by reactive ion etching using the layer 8a as a mask. Then, the layer 2 is subjected to plasma etching. A resist 3a is removed to obtain a fine pattern 2a.
JP22208887A 1987-09-07 1987-09-07 Formation of pattern Pending JPS6465841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22208887A JPS6465841A (en) 1987-09-07 1987-09-07 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22208887A JPS6465841A (en) 1987-09-07 1987-09-07 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS6465841A true JPS6465841A (en) 1989-03-13

Family

ID=16776938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22208887A Pending JPS6465841A (en) 1987-09-07 1987-09-07 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS6465841A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518059B1 (en) * 1991-05-10 2000-02-16 Alenia Marconi Systems S.p.A. Manufacturing of LiNbO3 channel optical guides

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0518059B1 (en) * 1991-05-10 2000-02-16 Alenia Marconi Systems S.p.A. Manufacturing of LiNbO3 channel optical guides

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