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JPS5650514A - Formation of fine pattern - Google Patents

Formation of fine pattern

Info

Publication number
JPS5650514A
JPS5650514A JP12754079A JP12754079A JPS5650514A JP S5650514 A JPS5650514 A JP S5650514A JP 12754079 A JP12754079 A JP 12754079A JP 12754079 A JP12754079 A JP 12754079A JP S5650514 A JPS5650514 A JP S5650514A
Authority
JP
Japan
Prior art keywords
film
pattern
layers
polycrystalline silicon
fine pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12754079A
Other languages
Japanese (ja)
Inventor
Haruhiko Abe
Hirozo Takano
Sumio Nomoto
Yoji Masuko
Sotohisa Asai
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12754079A priority Critical patent/JPS5650514A/en
Publication of JPS5650514A publication Critical patent/JPS5650514A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To simplify the formation of a pattern by a method wherein ions are implanted in accordance with a prescribed pattern in the surface layer parts of a film to be processed being formed on the surface of a substrate or of a film on the substrate to form quality changed layers, and the film to be processed is etched using the layers as masks. CONSTITUTION:After a silicon oxide film 2 and a polycrystalline silicon film 3 are stacked in order on a silicon semiconductor substrate 1, ions of oxygen, etc., are implanted in the surface layer of the polycrystalline silicon film to form locally quality changed layers 8. Using the quality changed layers 8 as masks, plasma etching is performed in CF4 gas plasma 6, for example, to form a fine pattern of polycrystalline silicon. Accordingly, because the fine pattern can be formed directly without necessitating a photo-etching process, the manufacturing process is shortened and the defect of pattern generating by the adhesion of foreign material and refuse can be reduced.
JP12754079A 1979-10-01 1979-10-01 Formation of fine pattern Pending JPS5650514A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12754079A JPS5650514A (en) 1979-10-01 1979-10-01 Formation of fine pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12754079A JPS5650514A (en) 1979-10-01 1979-10-01 Formation of fine pattern

Publications (1)

Publication Number Publication Date
JPS5650514A true JPS5650514A (en) 1981-05-07

Family

ID=14962531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12754079A Pending JPS5650514A (en) 1979-10-01 1979-10-01 Formation of fine pattern

Country Status (1)

Country Link
JP (1) JPS5650514A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117239A (en) * 1981-01-12 1982-07-21 Toshiba Corp Forming method for polycrystal silicon pattern
JPS57208142A (en) * 1981-06-17 1982-12-21 Toshiba Corp Method for forming fine pattern
JPS58212137A (en) * 1982-06-03 1983-12-09 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS61194834A (en) * 1985-02-25 1986-08-29 モトローラ・インコーポレーテツド Etching of polysilicon

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52128066A (en) * 1976-04-20 1977-10-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5461477A (en) * 1977-10-26 1979-05-17 Cho Lsi Gijutsu Kenkyu Kumiai Method of machining by electron beam or ion beam irradiation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52128066A (en) * 1976-04-20 1977-10-27 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5461477A (en) * 1977-10-26 1979-05-17 Cho Lsi Gijutsu Kenkyu Kumiai Method of machining by electron beam or ion beam irradiation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117239A (en) * 1981-01-12 1982-07-21 Toshiba Corp Forming method for polycrystal silicon pattern
JPS57208142A (en) * 1981-06-17 1982-12-21 Toshiba Corp Method for forming fine pattern
JPS58212137A (en) * 1982-06-03 1983-12-09 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS61194834A (en) * 1985-02-25 1986-08-29 モトローラ・インコーポレーテツド Etching of polysilicon

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