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JPS6453553A - Hydrogen treatment of thin film transistor - Google Patents

Hydrogen treatment of thin film transistor

Info

Publication number
JPS6453553A
JPS6453553A JP62211122A JP21112287A JPS6453553A JP S6453553 A JPS6453553 A JP S6453553A JP 62211122 A JP62211122 A JP 62211122A JP 21112287 A JP21112287 A JP 21112287A JP S6453553 A JPS6453553 A JP S6453553A
Authority
JP
Japan
Prior art keywords
hydrogen
tft
tfts
treatment
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62211122A
Other languages
Japanese (ja)
Inventor
Mamoru Ishida
Shunichi Inagi
Zenichi Akiyama
Mitsuhiro Kobata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Original Assignee
Ricoh Research Institute of General Electronics Co Ltd
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Research Institute of General Electronics Co Ltd, Ricoh Co Ltd filed Critical Ricoh Research Institute of General Electronics Co Ltd
Priority to JP62211122A priority Critical patent/JPS6453553A/en
Publication of JPS6453553A publication Critical patent/JPS6453553A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To enable a large number of TFTs to be simultaneously treated each time a hydrogen treatment being performed, by treating the TFTs with a pressure and heat treatment in a hydrogen atmosphere in order to diffuse hydrogen atoms into the polycrystalline silicon active layers thereof. CONSTITUTION:A TFT comprises an insulating substrate 1, a polycrystalline silicon active layer 2, an gate insulating film 3, a polycrystalline silicon gate electrode 4, a source/drain diffusion layer 2-a, a PSG interlayer insulating film 5, and an Al wiring 6. The pressure and heat conditions for such a TFT, in order to diffuse hydrogen atoms more effectively, are preferred to be set at pressures at least above 2 normal atmosphere, and more particularly at pressures above 10 normal atmosphere. Moreover, the heat temperature is set in the temperature range in which the diffusion coefficient of hydrogen is increased and the TFT is not damaged, i. e. in the range of 200-600 deg.C. Thus, because the hydrogen treatment can be performed using a simple way pressuring and heating the TFT in the hydrogen atmosphere, a large number of TFTs can be treated at the same time by the hydrogen treatment.
JP62211122A 1987-08-25 1987-08-25 Hydrogen treatment of thin film transistor Pending JPS6453553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62211122A JPS6453553A (en) 1987-08-25 1987-08-25 Hydrogen treatment of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62211122A JPS6453553A (en) 1987-08-25 1987-08-25 Hydrogen treatment of thin film transistor

Publications (1)

Publication Number Publication Date
JPS6453553A true JPS6453553A (en) 1989-03-01

Family

ID=16600759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62211122A Pending JPS6453553A (en) 1987-08-25 1987-08-25 Hydrogen treatment of thin film transistor

Country Status (1)

Country Link
JP (1) JPS6453553A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6281053B1 (en) 1997-12-09 2001-08-28 Nec Corporation Thin film transistor with reduced hydrogen passivation process time
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6281053B1 (en) 1997-12-09 2001-08-28 Nec Corporation Thin film transistor with reduced hydrogen passivation process time

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