JPS6453553A - Hydrogen treatment of thin film transistor - Google Patents
Hydrogen treatment of thin film transistorInfo
- Publication number
- JPS6453553A JPS6453553A JP62211122A JP21112287A JPS6453553A JP S6453553 A JPS6453553 A JP S6453553A JP 62211122 A JP62211122 A JP 62211122A JP 21112287 A JP21112287 A JP 21112287A JP S6453553 A JPS6453553 A JP S6453553A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- tft
- tfts
- treatment
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To enable a large number of TFTs to be simultaneously treated each time a hydrogen treatment being performed, by treating the TFTs with a pressure and heat treatment in a hydrogen atmosphere in order to diffuse hydrogen atoms into the polycrystalline silicon active layers thereof. CONSTITUTION:A TFT comprises an insulating substrate 1, a polycrystalline silicon active layer 2, an gate insulating film 3, a polycrystalline silicon gate electrode 4, a source/drain diffusion layer 2-a, a PSG interlayer insulating film 5, and an Al wiring 6. The pressure and heat conditions for such a TFT, in order to diffuse hydrogen atoms more effectively, are preferred to be set at pressures at least above 2 normal atmosphere, and more particularly at pressures above 10 normal atmosphere. Moreover, the heat temperature is set in the temperature range in which the diffusion coefficient of hydrogen is increased and the TFT is not damaged, i. e. in the range of 200-600 deg.C. Thus, because the hydrogen treatment can be performed using a simple way pressuring and heating the TFT in the hydrogen atmosphere, a large number of TFTs can be treated at the same time by the hydrogen treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211122A JPS6453553A (en) | 1987-08-25 | 1987-08-25 | Hydrogen treatment of thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211122A JPS6453553A (en) | 1987-08-25 | 1987-08-25 | Hydrogen treatment of thin film transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6453553A true JPS6453553A (en) | 1989-03-01 |
Family
ID=16600759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62211122A Pending JPS6453553A (en) | 1987-08-25 | 1987-08-25 | Hydrogen treatment of thin film transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6453553A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271066B1 (en) | 1991-03-18 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6281053B1 (en) | 1997-12-09 | 2001-08-28 | Nec Corporation | Thin film transistor with reduced hydrogen passivation process time |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
-
1987
- 1987-08-25 JP JP62211122A patent/JPS6453553A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271066B1 (en) | 1991-03-18 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6562672B2 (en) | 1991-03-18 | 2003-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
US6281053B1 (en) | 1997-12-09 | 2001-08-28 | Nec Corporation | Thin film transistor with reduced hydrogen passivation process time |
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