JPS6432678A - Thin-film transistor - Google Patents
Thin-film transistorInfo
- Publication number
- JPS6432678A JPS6432678A JP62189549A JP18954987A JPS6432678A JP S6432678 A JPS6432678 A JP S6432678A JP 62189549 A JP62189549 A JP 62189549A JP 18954987 A JP18954987 A JP 18954987A JP S6432678 A JPS6432678 A JP S6432678A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- sinxhy
- inter
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910004294 SiNxHy Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent the generation of Al disconnection, peeling and cracks, and to execute hydrogen treatment efficiently by using both an SiO2 film and an SiNxHy film as inter-layer insulating films. CONSTITUTION:A poly Si layer 2, a gate insulating film 3 and a gate electrode 4 are formed onto an insulating substrate 1, and a source-drain diffusion layer 2-a is shaped. An SiNxHy film 5-a and an SiO2 film 5-b as inter-layer insulating films are formed onto the layer 2-a. The SiO2 film is employed as the excellent inter-layer insulating film because it has step covering properties better than SiNxHy and also has small film stress, but it is preferable that a PSG film is used and the film is made to reflow after the film is shaped. When the SiNxHy film is formed through a CVD method using high-frequency plasma and ECR, the film containing hydrogen of 10<-3>-30% can be formed by controlling a reaction temperature and a gas ratio.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189549A JPS6432678A (en) | 1987-07-28 | 1987-07-28 | Thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62189549A JPS6432678A (en) | 1987-07-28 | 1987-07-28 | Thin-film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6432678A true JPS6432678A (en) | 1989-02-02 |
Family
ID=16243178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62189549A Pending JPS6432678A (en) | 1987-07-28 | 1987-07-28 | Thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6432678A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043512A (en) * | 1996-09-06 | 2000-03-28 | Sharp Kaubushiki Kaisha | Thin film semiconductor device and method for producing the same |
| US6396078B1 (en) * | 1995-06-20 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US6548828B2 (en) | 1997-09-30 | 2003-04-15 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less |
| US6555419B2 (en) | 1997-10-03 | 2003-04-29 | Sanyo Electric Co., Ltd. | Thin film transistor and manufacturing method of thin film transistor |
| US6613618B1 (en) | 1997-09-30 | 2003-09-02 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of producing the same |
| JP2005026712A (en) * | 2004-09-17 | 2005-01-27 | Semiconductor Energy Lab Co Ltd | Thin film integrated circuit and active type liquid crystal display device |
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7550398B2 (en) * | 2004-03-30 | 2009-06-23 | Eudyna Devices, Inc. | Semiconductor device and method of fabricating the same |
| US8889288B2 (en) | 2006-12-11 | 2014-11-18 | Lg Chem, Ltd. | Lithium ion battery of crimping shape of increased safety |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136259A (en) * | 1983-12-24 | 1985-07-19 | Sony Corp | Manufacturing method of field effect transistor |
-
1987
- 1987-07-28 JP JP62189549A patent/JPS6432678A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136259A (en) * | 1983-12-24 | 1985-07-19 | Sony Corp | Manufacturing method of field effect transistor |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6849872B1 (en) | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
| US6396078B1 (en) * | 1995-06-20 | 2002-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US6593235B2 (en) | 1995-06-20 | 2003-07-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US7019385B1 (en) | 1996-04-12 | 2006-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US7838968B2 (en) | 1996-04-12 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating same |
| US6043512A (en) * | 1996-09-06 | 2000-03-28 | Sharp Kaubushiki Kaisha | Thin film semiconductor device and method for producing the same |
| US6548828B2 (en) | 1997-09-30 | 2003-04-15 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less |
| US6613618B1 (en) | 1997-09-30 | 2003-09-02 | Sanyo Electric Co., Ltd. | Thin-film transistor and method of producing the same |
| KR100544919B1 (en) * | 1997-09-30 | 2006-04-21 | 산요덴키가부시키가이샤 | Thin film transistor and method of manufacturing the same |
| US6555419B2 (en) | 1997-10-03 | 2003-04-29 | Sanyo Electric Co., Ltd. | Thin film transistor and manufacturing method of thin film transistor |
| US6867075B2 (en) | 1997-10-03 | 2005-03-15 | Sanyo Electric Co | Manufacturing method of thin film transistor in which a total film thickness of silicon oxide films is defined |
| US7550398B2 (en) * | 2004-03-30 | 2009-06-23 | Eudyna Devices, Inc. | Semiconductor device and method of fabricating the same |
| JP2005026712A (en) * | 2004-09-17 | 2005-01-27 | Semiconductor Energy Lab Co Ltd | Thin film integrated circuit and active type liquid crystal display device |
| US8889288B2 (en) | 2006-12-11 | 2014-11-18 | Lg Chem, Ltd. | Lithium ion battery of crimping shape of increased safety |
| US9130203B2 (en) | 2006-12-11 | 2015-09-08 | Lg Chem, Ltd. | Lithium ion battery of crimping shape of increased safety |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960042954A (en) | Method of forming ruthenium oxide film for diffusion barrier of semiconductor device | |
| EP1109211A3 (en) | Method of reducing undesired etching of insulation due to elevated boron concentrations | |
| US20020164877A1 (en) | Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning | |
| JPS6432678A (en) | Thin-film transistor | |
| WO1999043024A1 (en) | Method for limiting internal diffusion in a semiconductor device with composite si/sige gate | |
| JPS54116184A (en) | Manufacture for semiconductor device | |
| JPS54162980A (en) | Manufacture of semiconductor device | |
| US6197706B1 (en) | Low temperature method to form low k dielectric | |
| JPS57115823A (en) | Manufacture of amorphous semiconductor film | |
| JPH01107547A (en) | Compound semiconductor substrate | |
| JPS64766A (en) | Semiconductor device | |
| JPS6415983A (en) | Thin film transistor | |
| JPS5469964A (en) | Production of semiconductor device | |
| JPS55128828A (en) | Manufacture of semiconductor device | |
| JPS6262529A (en) | Forming method for silicon nitride film | |
| JPS57147279A (en) | Field effect transistor using amorphous silicon and manufacture of insulating film for the same transistor | |
| JPS5690528A (en) | Surface treatment of semiconductor device | |
| JPS55107229A (en) | Method of manufacturing semiconductor device | |
| JPH0350873A (en) | Thin-film transistor | |
| JPS6449234A (en) | Semiconductor device | |
| JPS56146254A (en) | Manufacture of semiconductor device | |
| JPH06120355A (en) | Manufacture of semiconductor device | |
| JPH01157437A (en) | Method for modifying surface of glass | |
| JPS6453553A (en) | Hydrogen treatment of thin film transistor | |
| RU2024107C1 (en) | Mos transistor manufacturing process |