JPS6423536A - Sputter-etching device - Google Patents
Sputter-etching deviceInfo
- Publication number
- JPS6423536A JPS6423536A JP62178997A JP17899787A JPS6423536A JP S6423536 A JPS6423536 A JP S6423536A JP 62178997 A JP62178997 A JP 62178997A JP 17899787 A JP17899787 A JP 17899787A JP S6423536 A JPS6423536 A JP S6423536A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- generated
- microwaves
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To make an etching speed faster while a high-density plasma is generated and to eliminate the damage of a substrate by a method wherein the generation of the plasma and a voltage to be used when ions in the plasma collide with the substrate are controlled independently of each other by using separate power supplied. CONSTITUTION:Microwaves generated by using a microwave generation source 10 are sent to a cavity 12 through a waveguide 11. By adjusting a matching means 13, the cavity 12 is matched to a condition of a cavity resonator of the microwaves; an electric field of the microwaves inside the cavity 12 is enhanced; an atmospheric gas inside a tank supplied into a vacuum tank 1 by using a gas supply means 4 is ionized by the microwaves introduced into the vacuum tank 1 through an introduction window 14; a plasma 15 is generated. Ions in the plasma generated in this manner are accelerated by a voltage generated on a substrate 5 via an etching electrode 6 after the high-frequency electric power has been impressed by a power supply 8 connected to the etching electrode 6; the ions collide with the substrate; a sputter-etching operation is executed. By this setup, it is possible to generate the high-density plasma which is symmetrical with reference to an axis and is stable; an etching speed can be made faster; it is possible to reduce the damage of the substrate.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178997A JPS6423536A (en) | 1987-07-20 | 1987-07-20 | Sputter-etching device |
KR1019880008942A KR920002864B1 (en) | 1987-07-20 | 1988-07-18 | Apparatus for treating matrial by using plasma |
US07/221,272 US5021114A (en) | 1987-07-20 | 1988-07-19 | Apparatus for treating material by using plasma |
DE3854541T DE3854541T2 (en) | 1987-07-20 | 1988-07-20 | Method and device for treating a material by plasma. |
EP88111684A EP0300447B1 (en) | 1987-07-20 | 1988-07-20 | Method and apparatus for treating material by using plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178997A JPS6423536A (en) | 1987-07-20 | 1987-07-20 | Sputter-etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6423536A true JPS6423536A (en) | 1989-01-26 |
Family
ID=16058307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62178997A Pending JPS6423536A (en) | 1987-07-20 | 1987-07-20 | Sputter-etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6423536A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04128393A (en) * | 1990-09-19 | 1992-04-28 | Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk | Strain-free precision processing device by radical reaction |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664437A (en) * | 1979-08-22 | 1981-06-01 | Onera (Off Nat Aerospatiale) | Method and device for chemically etching integrated circuit by dry process |
JPS58100431A (en) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | Plasma etching and device thereof |
JPS61107730A (en) * | 1984-10-29 | 1986-05-26 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compound excitation plasma etching system |
JPS63104333A (en) * | 1986-10-22 | 1988-05-09 | Oki Electric Ind Co Ltd | Dry etching method |
-
1987
- 1987-07-20 JP JP62178997A patent/JPS6423536A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664437A (en) * | 1979-08-22 | 1981-06-01 | Onera (Off Nat Aerospatiale) | Method and device for chemically etching integrated circuit by dry process |
JPS58100431A (en) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | Plasma etching and device thereof |
JPS61107730A (en) * | 1984-10-29 | 1986-05-26 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Compound excitation plasma etching system |
JPS63104333A (en) * | 1986-10-22 | 1988-05-09 | Oki Electric Ind Co Ltd | Dry etching method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04128393A (en) * | 1990-09-19 | 1992-04-28 | Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk | Strain-free precision processing device by radical reaction |
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