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JPS6422029A - Plasma etching system - Google Patents

Plasma etching system

Info

Publication number
JPS6422029A
JPS6422029A JP17869287A JP17869287A JPS6422029A JP S6422029 A JPS6422029 A JP S6422029A JP 17869287 A JP17869287 A JP 17869287A JP 17869287 A JP17869287 A JP 17869287A JP S6422029 A JPS6422029 A JP S6422029A
Authority
JP
Japan
Prior art keywords
plasma
etching
base plate
magnetic field
generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17869287A
Other languages
Japanese (ja)
Inventor
Naoyoshi Fujiwara
Kotaro Hamashima
Masanobu Nakano
Itsuko Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17869287A priority Critical patent/JPS6422029A/en
Publication of JPS6422029A publication Critical patent/JPS6422029A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain an etching system capable of etching an article to be treated at high speed without damage by generating plasma by microwaves and a magnetic field, sealing generated plasma near a base plate by a magnetic field for sealing and effectively utilizing the plasma. CONSTITUTION:An etching gas is introduced into an silica tube 11 for a vacuum vessel 9. Currents are caused to flow through coils 5, 6 to generate a magnetic field while microwaves are generated by a magnetron 7, and the magnetic field and a high-frequency electric field are worked on the etching gas to generate plasma. Generated plasma is sealed into an etching chamber near a base plate 10 by a mirror field B applied by the coils 5, 6, and high-density plasma is produced near the base plate 10. Sealed plasma is accelerated by DC currents by accelerating electrodes 1, 2, and the surface of a wafer on the base plate 10 is etched. Accordingly, the ion density of plasma used for etching is increased, and the wafer can be etched at high speed.
JP17869287A 1987-07-17 1987-07-17 Plasma etching system Pending JPS6422029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17869287A JPS6422029A (en) 1987-07-17 1987-07-17 Plasma etching system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17869287A JPS6422029A (en) 1987-07-17 1987-07-17 Plasma etching system

Publications (1)

Publication Number Publication Date
JPS6422029A true JPS6422029A (en) 1989-01-25

Family

ID=16052879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17869287A Pending JPS6422029A (en) 1987-07-17 1987-07-17 Plasma etching system

Country Status (1)

Country Link
JP (1) JPS6422029A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0227718A (en) * 1988-07-15 1990-01-30 Mitsubishi Electric Corp Plasma treating method and plasma treater using the same method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0227718A (en) * 1988-07-15 1990-01-30 Mitsubishi Electric Corp Plasma treating method and plasma treater using the same method

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