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JPS6412567A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6412567A
JPS6412567A JP62169039A JP16903987A JPS6412567A JP S6412567 A JPS6412567 A JP S6412567A JP 62169039 A JP62169039 A JP 62169039A JP 16903987 A JP16903987 A JP 16903987A JP S6412567 A JPS6412567 A JP S6412567A
Authority
JP
Japan
Prior art keywords
film
impurity
mask
polycrystalline
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62169039A
Other languages
Japanese (ja)
Inventor
Toyoyuki Shimazaki
Shinichi Uchida
Fumihiko Noro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62169039A priority Critical patent/JPS6412567A/en
Publication of JPS6412567A publication Critical patent/JPS6412567A/en
Pending legal-status Critical Current

Links

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enable removal of a reaction product by a method wherein an Si oxide film and a resist mask pattern for the control of impurity diffusion are formed on a polycrystalline Si film successively and the Si oxide film and the mask pattern are removed after impurity ions are implanted. CONSTITUTION:A polycrystalline Si film 3 is formed after an insulating film 2 is formed on a semiconductor substrate 1. Next, an Si oxide film 4 is formed on the film 3. And, an impurity diffusion resist mask 5 is laid on the film 4. Then, impurity ions are implanted into the films 4 and 3 from the top of the mask 5 for the formation of an impurity layer 6. A process follows, where the mask 5 is removed. In this process, a reaction product 7 formed in a im purity ions implanting process is left on the film 4. Next, the film 4 is eliminat ed. In this process, the product 7 can be easily removed concurrently with the film 4, therefore cleaning of the surface of the film 3 can be realized.
JP62169039A 1987-07-07 1987-07-07 Manufacture of semiconductor device Pending JPS6412567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62169039A JPS6412567A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62169039A JPS6412567A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6412567A true JPS6412567A (en) 1989-01-17

Family

ID=15879180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62169039A Pending JPS6412567A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6412567A (en)

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