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JPS6410693A - Bistable semiconductor laser - Google Patents

Bistable semiconductor laser

Info

Publication number
JPS6410693A
JPS6410693A JP16633987A JP16633987A JPS6410693A JP S6410693 A JPS6410693 A JP S6410693A JP 16633987 A JP16633987 A JP 16633987A JP 16633987 A JP16633987 A JP 16633987A JP S6410693 A JPS6410693 A JP S6410693A
Authority
JP
Japan
Prior art keywords
region
light absorbing
layer
beta
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16633987A
Other languages
Japanese (ja)
Inventor
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16633987A priority Critical patent/JPS6410693A/en
Publication of JPS6410693A publication Critical patent/JPS6410693A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide a stably operating bistable semiconductor laser capable of performing bistable operation in a larger current region and having improved reproducibility, based on a principle of bistable operation, by forming a light absorbing region instead of providing an absorbing region by difference in carrier injection. CONSTITUTION:A linear groove provided in a light absorbing region is further provided in continuity across a light absorbing layer 14 and a third clad layer 15. The part of the groove which is filled with a fourth clad layer 17 presents a higher refractive index and forms a guiding mechanism of positive refractive index. A high reflection film 28 is formed on the end face adjacent to the groove, whereby non-saturation absorption is increased to accelerate bistable operation. When a ratio of a length of a region of the active layer covered with the light absorbing layer to a length of the active region in the length of a resonator is h:(1-h), and a loss alpha of light received by the region of the active layer covered with the light absorbing layer is standardized loss beta=halpha/tau when tau is cavity loss, a ratio ga/gb of a differential gain factor in the active region to that in the region of the active layer covered with the light absorbing layer and a ratio taua/taub of natural carrier lives of these regions have a relation represented by ga.taua/gb.taub<(-beta)/(1-beta).
JP16633987A 1987-07-02 1987-07-02 Bistable semiconductor laser Pending JPS6410693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16633987A JPS6410693A (en) 1987-07-02 1987-07-02 Bistable semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16633987A JPS6410693A (en) 1987-07-02 1987-07-02 Bistable semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6410693A true JPS6410693A (en) 1989-01-13

Family

ID=15829534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16633987A Pending JPS6410693A (en) 1987-07-02 1987-07-02 Bistable semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6410693A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743714B2 (en) 1995-11-21 2004-06-01 Applied Materials, Inc. Low temperature integrated metallization process and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743714B2 (en) 1995-11-21 2004-06-01 Applied Materials, Inc. Low temperature integrated metallization process and apparatus

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