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JPS5539688A - Integrated circuit device of semiconductors - Google Patents

Integrated circuit device of semiconductors

Info

Publication number
JPS5539688A
JPS5539688A JP11394478A JP11394478A JPS5539688A JP S5539688 A JPS5539688 A JP S5539688A JP 11394478 A JP11394478 A JP 11394478A JP 11394478 A JP11394478 A JP 11394478A JP S5539688 A JPS5539688 A JP S5539688A
Authority
JP
Japan
Prior art keywords
region
type
layer
diffusing
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11394478A
Other languages
Japanese (ja)
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11394478A priority Critical patent/JPS5539688A/en
Publication of JPS5539688A publication Critical patent/JPS5539688A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To obtain an IC of a high degree of integration suitably used for MOS memories, by laminating a MOS transistor and a capacity element consisting of a PN-junction diode having a high concentration of impurities on the upper surface and lower surface, respectively, of a flat layer of epitaxial growth. CONSTITUTION:An embedded region consisting of an N<+>-type region 3 formed by diffusing As, an N<+>-type region 5 formed in a portion of the region 3 by diffusing P, and a P<+>-type region 4 enclosing the regions 3,5 and formed by the injection of B ions is formed in a P<+>-type Si substrate 1. A P-type layer 2 is then formed by epitaxial growth on the entire surface of the substrate 1 including the regions 3,5,4. During this heat treatment, the upper and lower portions of the region 4 are expanded into the substrate 1 and layer 2, and the region 5 is also expanded deeply in the upward and downward directions. An N<+>-type drain region 6 is then formed in the layer 2 by diffusing As, and also an N<3>-type soruce region 7 is formed on the region 5. A poly-crystalline Si gate electrode is provided via an SiO2 film 8 on those portions of the layer 2 which is exposed between the regions 6,7, and these portions of the layer 2 constitute IGFT. That portion of the region 7 which is in contact at its lower surface with the region 5 is used as a capacitance region.
JP11394478A 1978-09-14 1978-09-14 Integrated circuit device of semiconductors Pending JPS5539688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11394478A JPS5539688A (en) 1978-09-14 1978-09-14 Integrated circuit device of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11394478A JPS5539688A (en) 1978-09-14 1978-09-14 Integrated circuit device of semiconductors

Publications (1)

Publication Number Publication Date
JPS5539688A true JPS5539688A (en) 1980-03-19

Family

ID=14625104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11394478A Pending JPS5539688A (en) 1978-09-14 1978-09-14 Integrated circuit device of semiconductors

Country Status (1)

Country Link
JP (1) JPS5539688A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPH01292851A (en) * 1988-05-20 1989-11-27 Nec Corp Semiconductor memory device
US5276344A (en) * 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5428236A (en) * 1983-12-15 1995-06-27 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capicitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52107785A (en) * 1976-03-08 1977-09-09 Nec Corp Semiconductor unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52107785A (en) * 1976-03-08 1977-09-09 Nec Corp Semiconductor unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5428236A (en) * 1983-12-15 1995-06-27 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capicitor
US4688063A (en) * 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
JPH01292851A (en) * 1988-05-20 1989-11-27 Nec Corp Semiconductor memory device
US5276344A (en) * 1990-04-27 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5489791A (en) * 1990-04-27 1996-02-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof
US5672533A (en) * 1990-04-27 1997-09-30 Mitsubishi Denki Kabushiki Kaisha Field effect transistor having impurity regions of different depths and manufacturing method thereof

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