Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP4844877ApriorityCriticalpatent/JPS53134745A/en
Publication of JPS53134745ApublicationCriticalpatent/JPS53134745A/en
PURPOSE: To simplify process of etching by selectively etching desired and selected portion with organic material formed thereon or their boundaries on a substrate having an oxide film.
COPYRIGHT: (C)1978,JPO&Japio
JP4844877A1977-04-281977-04-28Method of plasma-etching thin oxide film
PendingJPS53134745A
(en)