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JPS5256874A - Production of semiconductive integrated circuit - Google Patents

Production of semiconductive integrated circuit

Info

Publication number
JPS5256874A
JPS5256874A JP50133242A JP13324275A JPS5256874A JP S5256874 A JPS5256874 A JP S5256874A JP 50133242 A JP50133242 A JP 50133242A JP 13324275 A JP13324275 A JP 13324275A JP S5256874 A JPS5256874 A JP S5256874A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductive integrated
semiconductive
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50133242A
Other languages
Japanese (ja)
Other versions
JPS5429354B2 (en
Inventor
Toyoki Takemoto
Michihiro Inoue
Haruyasu Yamada
Tsutomu Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50133242A priority Critical patent/JPS5256874A/en
Publication of JPS5256874A publication Critical patent/JPS5256874A/en
Publication of JPS5429354B2 publication Critical patent/JPS5429354B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To gain the IC including the high density and high current amplification lateral transistor by the next procedure, that is, hyperfine width insulating membrane is formed on the substrate by degenerating the side of mask layer on the semiconductive substrate using the oxidizing difusion and this width is used to the base.
COPYRIGHT: (C)1977,JPO&Japio
JP50133242A 1975-11-05 1975-11-05 Production of semiconductive integrated circuit Granted JPS5256874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50133242A JPS5256874A (en) 1975-11-05 1975-11-05 Production of semiconductive integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50133242A JPS5256874A (en) 1975-11-05 1975-11-05 Production of semiconductive integrated circuit

Publications (2)

Publication Number Publication Date
JPS5256874A true JPS5256874A (en) 1977-05-10
JPS5429354B2 JPS5429354B2 (en) 1979-09-22

Family

ID=15100020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50133242A Granted JPS5256874A (en) 1975-11-05 1975-11-05 Production of semiconductive integrated circuit

Country Status (1)

Country Link
JP (1) JPS5256874A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150872A (en) * 1980-02-14 1981-11-21 Xerox Corp Super lsi self-matching schottky metal semiconductor field effect transistor structure and method of manufacturing same
JPS57180136A (en) * 1981-04-30 1982-11-06 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPS6314435A (en) * 1986-07-04 1988-01-21 Agency Of Ind Science & Technol Fine structure formation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150872A (en) * 1980-02-14 1981-11-21 Xerox Corp Super lsi self-matching schottky metal semiconductor field effect transistor structure and method of manufacturing same
JPS57180136A (en) * 1981-04-30 1982-11-06 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
JPS6314435A (en) * 1986-07-04 1988-01-21 Agency Of Ind Science & Technol Fine structure formation

Also Published As

Publication number Publication date
JPS5429354B2 (en) 1979-09-22

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