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JPS5254897A - Plasma ion source for solid materials - Google Patents

Plasma ion source for solid materials

Info

Publication number
JPS5254897A
JPS5254897A JP50129218A JP12921875A JPS5254897A JP S5254897 A JPS5254897 A JP S5254897A JP 50129218 A JP50129218 A JP 50129218A JP 12921875 A JP12921875 A JP 12921875A JP S5254897 A JPS5254897 A JP S5254897A
Authority
JP
Japan
Prior art keywords
ion source
solid materials
plasma ion
spark chamber
path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50129218A
Other languages
Japanese (ja)
Other versions
JPS5721829B2 (en
Inventor
Kuniyuki Sakumichi
Katsumi Tokikuchi
Ichiro Shikamata
Hideki Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50129218A priority Critical patent/JPS5254897A/en
Publication of JPS5254897A publication Critical patent/JPS5254897A/en
Publication of JPS5721829B2 publication Critical patent/JPS5721829B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE: In a device of drawing out ions from a spark chamber into which micro waves are introduced by means of inputting direct current magnetic field, the device is always smoothly operated by controlling independently the temperatures of spark chamber, path, and evaporation furnace by means of setting up an evaporation furnace in the spark chamber through the path.
COPYRIGHT: (C)1977,JPO&Japio
JP50129218A 1975-10-29 1975-10-29 Plasma ion source for solid materials Granted JPS5254897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50129218A JPS5254897A (en) 1975-10-29 1975-10-29 Plasma ion source for solid materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129218A JPS5254897A (en) 1975-10-29 1975-10-29 Plasma ion source for solid materials

Publications (2)

Publication Number Publication Date
JPS5254897A true JPS5254897A (en) 1977-05-04
JPS5721829B2 JPS5721829B2 (en) 1982-05-10

Family

ID=15004049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129218A Granted JPS5254897A (en) 1975-10-29 1975-10-29 Plasma ion source for solid materials

Country Status (1)

Country Link
JP (1) JPS5254897A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100340A (en) * 1984-10-15 1985-06-04 Hitachi Ltd Coaxial microwave ion source
JPH01103156U (en) * 1987-12-26 1989-07-12
JPH03112100A (en) * 1989-09-27 1991-05-13 Ebara Corp High-speed atomic beam radiating device
JPH06325710A (en) * 1993-05-14 1994-11-25 Hitachi Ltd Microwave ion source and ion implanting device
US6225569B1 (en) 1996-11-15 2001-05-01 Ngk Spark Plug Co., Ltd. Wiring substrate and method of manufacturing the same
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100340A (en) * 1984-10-15 1985-06-04 Hitachi Ltd Coaxial microwave ion source
JPH0334179B2 (en) * 1984-10-15 1991-05-21 Hitachi Ltd
JPH01103156U (en) * 1987-12-26 1989-07-12
JPH03112100A (en) * 1989-09-27 1991-05-13 Ebara Corp High-speed atomic beam radiating device
JPH06325710A (en) * 1993-05-14 1994-11-25 Hitachi Ltd Microwave ion source and ion implanting device
US6225569B1 (en) 1996-11-15 2001-05-01 Ngk Spark Plug Co., Ltd. Wiring substrate and method of manufacturing the same
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Also Published As

Publication number Publication date
JPS5721829B2 (en) 1982-05-10

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