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JPS5252099A - Plasma ion source - Google Patents

Plasma ion source

Info

Publication number
JPS5252099A
JPS5252099A JP50126357A JP12635775A JPS5252099A JP S5252099 A JPS5252099 A JP S5252099A JP 50126357 A JP50126357 A JP 50126357A JP 12635775 A JP12635775 A JP 12635775A JP S5252099 A JPS5252099 A JP S5252099A
Authority
JP
Japan
Prior art keywords
ion source
plasma ion
ion
discharge
element expected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50126357A
Other languages
Japanese (ja)
Other versions
JPS5836456B2 (en
Inventor
Kuniyuki Sakumichi
Katsumi Tokikuchi
Hideki Koike
Ichiro Shikamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50126357A priority Critical patent/JPS5836456B2/en
Publication of JPS5252099A publication Critical patent/JPS5252099A/en
Publication of JPS5836456B2 publication Critical patent/JPS5836456B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

PURPOSE: In a source to ionize steam of element expected as ion by discharge of microwave in magnetic field, the discharge electrode surface is covered by solid of element expected as ion to obtain high purity ion efficiently.
COPYRIGHT: (C)1977,JPO&Japio
JP50126357A 1975-10-22 1975-10-22 microwave plasma ion source Expired JPS5836456B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50126357A JPS5836456B2 (en) 1975-10-22 1975-10-22 microwave plasma ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50126357A JPS5836456B2 (en) 1975-10-22 1975-10-22 microwave plasma ion source

Publications (2)

Publication Number Publication Date
JPS5252099A true JPS5252099A (en) 1977-04-26
JPS5836456B2 JPS5836456B2 (en) 1983-08-09

Family

ID=14933169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50126357A Expired JPS5836456B2 (en) 1975-10-22 1975-10-22 microwave plasma ion source

Country Status (1)

Country Link
JP (1) JPS5836456B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137943A (en) * 1982-02-10 1983-08-16 Jeol Ltd Ion source
JPS5974659U (en) * 1982-11-10 1984-05-21 東京エレクトロン株式会社 Ion generator of ion implanter
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137943A (en) * 1982-02-10 1983-08-16 Jeol Ltd Ion source
JPS5974659U (en) * 1982-11-10 1984-05-21 東京エレクトロン株式会社 Ion generator of ion implanter
JPH051895Y2 (en) * 1982-11-10 1993-01-19
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Also Published As

Publication number Publication date
JPS5836456B2 (en) 1983-08-09

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