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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP4772176ApriorityCriticalpatent/JPS52131479A/en
Publication of JPS52131479ApublicationCriticalpatent/JPS52131479A/en
PURPOSE: To avoid the lowering of gain and output even at the high frequency region by securing contact between the insulator and each semiconductor layer's side surface of source, gate and drain and also by reducing the size of the drain region.