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JPS5129091A - PATAANKEISEISOCHI - Google Patents

PATAANKEISEISOCHI

Info

Publication number
JPS5129091A
JPS5129091A JP10196674A JP10196674A JPS5129091A JP S5129091 A JPS5129091 A JP S5129091A JP 10196674 A JP10196674 A JP 10196674A JP 10196674 A JP10196674 A JP 10196674A JP S5129091 A JPS5129091 A JP S5129091A
Authority
JP
Japan
Prior art keywords
pataankeiseisochi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10196674A
Other languages
Japanese (ja)
Other versions
JPS5311828B2 (en
Inventor
Shigeo Okayama
Kyuzo Kawakatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10196674A priority Critical patent/JPS5129091A/en
Priority to FR7527498A priority patent/FR2284186A1/en
Publication of JPS5129091A publication Critical patent/JPS5129091A/en
Priority to US05/687,690 priority patent/US4075488A/en
Publication of JPS5311828B2 publication Critical patent/JPS5311828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3007Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP10196674A 1974-09-06 1974-09-06 PATAANKEISEISOCHI Granted JPS5129091A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10196674A JPS5129091A (en) 1974-09-06 1974-09-06 PATAANKEISEISOCHI
FR7527498A FR2284186A1 (en) 1974-09-06 1975-09-08 Forming patterns on semiconductors using charged particle beam - with quadripole lens system to focus beam accurately
US05/687,690 US4075488A (en) 1974-09-06 1976-05-19 Pattern forming apparatus using quadrupole lenses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10196674A JPS5129091A (en) 1974-09-06 1974-09-06 PATAANKEISEISOCHI

Publications (2)

Publication Number Publication Date
JPS5129091A true JPS5129091A (en) 1976-03-11
JPS5311828B2 JPS5311828B2 (en) 1978-04-25

Family

ID=14314598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10196674A Granted JPS5129091A (en) 1974-09-06 1974-09-06 PATAANKEISEISOCHI

Country Status (2)

Country Link
JP (1) JPS5129091A (en)
FR (1) FR2284186A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360162A (en) * 1976-11-10 1978-05-30 Toshiba Corp Electron beam irradiation device
JPS54100665A (en) * 1977-12-23 1979-08-08 Anvar Ion implanting machine and method of controlling size of ion beam
JPS6091630A (en) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd Impurity difusing process
JPS62208632A (en) * 1986-01-31 1987-09-12 イ−エムエス・イオ−ネンミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング Apparatus for ion projector
JP2006049267A (en) * 2004-07-31 2006-02-16 Hynix Semiconductor Inc Ion implantation device for uniformalizing transistor parameter and ion implantation method using same
JP2020535587A (en) * 2017-09-29 2020-12-03 エーエスエムエル ネザーランズ ビー.ブイ. Sample precharging method and equipment for charged particle beam inspection

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6807439A (en) * 1968-05-27 1969-12-01

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360162A (en) * 1976-11-10 1978-05-30 Toshiba Corp Electron beam irradiation device
JPS5754906B2 (en) * 1976-11-10 1982-11-20
JPS54100665A (en) * 1977-12-23 1979-08-08 Anvar Ion implanting machine and method of controlling size of ion beam
JPS6231781B2 (en) * 1977-12-23 1987-07-10 Anbaaru Ajansu Nashionaru Do Barorizashion Do Ra Rusherushu
JPS6091630A (en) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd Impurity difusing process
JPS62208632A (en) * 1986-01-31 1987-09-12 イ−エムエス・イオ−ネンミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング Apparatus for ion projector
JP2006049267A (en) * 2004-07-31 2006-02-16 Hynix Semiconductor Inc Ion implantation device for uniformalizing transistor parameter and ion implantation method using same
JP2020535587A (en) * 2017-09-29 2020-12-03 エーエスエムエル ネザーランズ ビー.ブイ. Sample precharging method and equipment for charged particle beam inspection
US11676792B2 (en) 2017-09-29 2023-06-13 Asml Netherlands, B.V Sample pre-charging methods and apparatuses for charged particle beam inspection

Also Published As

Publication number Publication date
JPS5311828B2 (en) 1978-04-25
FR2284186A1 (en) 1976-04-02
FR2284186B1 (en) 1979-01-19

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