JPS5129091A - PATAANKEISEISOCHI - Google Patents
PATAANKEISEISOCHIInfo
- Publication number
- JPS5129091A JPS5129091A JP10196674A JP10196674A JPS5129091A JP S5129091 A JPS5129091 A JP S5129091A JP 10196674 A JP10196674 A JP 10196674A JP 10196674 A JP10196674 A JP 10196674A JP S5129091 A JPS5129091 A JP S5129091A
- Authority
- JP
- Japan
- Prior art keywords
- pataankeiseisochi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10196674A JPS5129091A (en) | 1974-09-06 | 1974-09-06 | PATAANKEISEISOCHI |
FR7527498A FR2284186A1 (en) | 1974-09-06 | 1975-09-08 | Forming patterns on semiconductors using charged particle beam - with quadripole lens system to focus beam accurately |
US05/687,690 US4075488A (en) | 1974-09-06 | 1976-05-19 | Pattern forming apparatus using quadrupole lenses |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10196674A JPS5129091A (en) | 1974-09-06 | 1974-09-06 | PATAANKEISEISOCHI |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5129091A true JPS5129091A (en) | 1976-03-11 |
JPS5311828B2 JPS5311828B2 (en) | 1978-04-25 |
Family
ID=14314598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10196674A Granted JPS5129091A (en) | 1974-09-06 | 1974-09-06 | PATAANKEISEISOCHI |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5129091A (en) |
FR (1) | FR2284186A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5360162A (en) * | 1976-11-10 | 1978-05-30 | Toshiba Corp | Electron beam irradiation device |
JPS54100665A (en) * | 1977-12-23 | 1979-08-08 | Anvar | Ion implanting machine and method of controlling size of ion beam |
JPS6091630A (en) * | 1983-10-25 | 1985-05-23 | Matsushita Electric Ind Co Ltd | Impurity difusing process |
JPS62208632A (en) * | 1986-01-31 | 1987-09-12 | イ−エムエス・イオ−ネンミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング | Apparatus for ion projector |
JP2006049267A (en) * | 2004-07-31 | 2006-02-16 | Hynix Semiconductor Inc | Ion implantation device for uniformalizing transistor parameter and ion implantation method using same |
JP2020535587A (en) * | 2017-09-29 | 2020-12-03 | エーエスエムエル ネザーランズ ビー.ブイ. | Sample precharging method and equipment for charged particle beam inspection |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6807439A (en) * | 1968-05-27 | 1969-12-01 |
-
1974
- 1974-09-06 JP JP10196674A patent/JPS5129091A/en active Granted
-
1975
- 1975-09-08 FR FR7527498A patent/FR2284186A1/en active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5360162A (en) * | 1976-11-10 | 1978-05-30 | Toshiba Corp | Electron beam irradiation device |
JPS5754906B2 (en) * | 1976-11-10 | 1982-11-20 | ||
JPS54100665A (en) * | 1977-12-23 | 1979-08-08 | Anvar | Ion implanting machine and method of controlling size of ion beam |
JPS6231781B2 (en) * | 1977-12-23 | 1987-07-10 | Anbaaru Ajansu Nashionaru Do Barorizashion Do Ra Rusherushu | |
JPS6091630A (en) * | 1983-10-25 | 1985-05-23 | Matsushita Electric Ind Co Ltd | Impurity difusing process |
JPS62208632A (en) * | 1986-01-31 | 1987-09-12 | イ−エムエス・イオ−ネンミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング | Apparatus for ion projector |
JP2006049267A (en) * | 2004-07-31 | 2006-02-16 | Hynix Semiconductor Inc | Ion implantation device for uniformalizing transistor parameter and ion implantation method using same |
JP2020535587A (en) * | 2017-09-29 | 2020-12-03 | エーエスエムエル ネザーランズ ビー.ブイ. | Sample precharging method and equipment for charged particle beam inspection |
US11676792B2 (en) | 2017-09-29 | 2023-06-13 | Asml Netherlands, B.V | Sample pre-charging methods and apparatuses for charged particle beam inspection |
Also Published As
Publication number | Publication date |
---|---|
JPS5311828B2 (en) | 1978-04-25 |
FR2284186A1 (en) | 1976-04-02 |
FR2284186B1 (en) | 1979-01-19 |
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