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FR2284186B1 - - Google Patents

Info

Publication number
FR2284186B1
FR2284186B1 FR7527498A FR7527498A FR2284186B1 FR 2284186 B1 FR2284186 B1 FR 2284186B1 FR 7527498 A FR7527498 A FR 7527498A FR 7527498 A FR7527498 A FR 7527498A FR 2284186 B1 FR2284186 B1 FR 2284186B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7527498A
Other languages
French (fr)
Other versions
FR2284186A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of FR2284186A1 publication Critical patent/FR2284186A1/en
Application granted granted Critical
Publication of FR2284186B1 publication Critical patent/FR2284186B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
FR7527498A 1974-09-06 1975-09-08 Forming patterns on semiconductors using charged particle beam - with quadripole lens system to focus beam accurately Granted FR2284186A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10196674A JPS5129091A (en) 1974-09-06 1974-09-06 PATAANKEISEISOCHI

Publications (2)

Publication Number Publication Date
FR2284186A1 FR2284186A1 (en) 1976-04-02
FR2284186B1 true FR2284186B1 (en) 1979-01-19

Family

ID=14314598

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7527498A Granted FR2284186A1 (en) 1974-09-06 1975-09-08 Forming patterns on semiconductors using charged particle beam - with quadripole lens system to focus beam accurately

Country Status (2)

Country Link
JP (1) JPS5129091A (en)
FR (1) FR2284186A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360162A (en) * 1976-11-10 1978-05-30 Toshiba Corp Electron beam irradiation device
CA1100237A (en) * 1977-03-23 1981-04-28 Roger F.W. Pease Multiple electron beam exposure system
FR2412939A1 (en) * 1977-12-23 1979-07-20 Anvar HIGH CURRENT ION IMPLANTER
JPS6091630A (en) * 1983-10-25 1985-05-23 Matsushita Electric Ind Co Ltd Impurity difusing process
AT388628B (en) * 1986-01-31 1989-08-10 Ims Ionen Mikrofab Syst DEVICE FOR PROJECTION DEVICES
KR100538813B1 (en) * 2004-07-31 2005-12-23 주식회사 하이닉스반도체 Implanter for uniformity of transistor parameter and method for implantation using the same
KR20200044097A (en) * 2017-09-29 2020-04-28 에이에스엠엘 네델란즈 비.브이. Sample pre-filling methods and devices for charged particle beam inspection

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6807439A (en) * 1968-05-27 1969-12-01

Also Published As

Publication number Publication date
JPS5311828B2 (en) 1978-04-25
JPS5129091A (en) 1976-03-11
FR2284186A1 (en) 1976-04-02

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Legal Events

Date Code Title Description
ST Notification of lapse