JPS5954274A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS5954274A JPS5954274A JP57165501A JP16550182A JPS5954274A JP S5954274 A JPS5954274 A JP S5954274A JP 57165501 A JP57165501 A JP 57165501A JP 16550182 A JP16550182 A JP 16550182A JP S5954274 A JPS5954274 A JP S5954274A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous
- amount
- added
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 3
- 230000006866 deterioration Effects 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 229910021478 group 5 element Inorganic materials 0.000 abstract description 3
- 230000002463 transducing effect Effects 0.000 abstract 2
- 229910003828 SiH3 Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 235000007575 Calluna vulgaris Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000003195 fascia Anatomy 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H01L31/075—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ１ 産業上の利用分野
本発明は光エネルギを餉１気エネルギに直接変換Ｔる光
起電力装置に関Ｔる。DETAILED DESCRIPTION OF THE INVENTION (1) Field of Industrial Application The present invention relates to a photovoltaic device that directly converts light energy into light energy.
呻）従来技術
非晶質シリコン等の非晶質半導体ンｆ、：＃Ｉえ茫光用
鶴、刀装置が従来の単結晶シリコンから成る光起電力装
置に較べ中位発電ＩＣ１当りのコストが安くη「るため
に脚光を浴ひている
然し乍ら、斯る非晶質光ｄ−Ｃ′屯力装置ｉ″／ ＆：
［’ｉ’ｉｌ知の如く単結前装ｆＲ１二比して光エネル
ギを・直１安宙気エネルギに変４ｆＩ［！Ｔる際の光゛
市変換効率（η〕か低いことか最大の問題点と７１−）
でおり６従来か日光市、変換効率を如何ζｌ―俯−１，
ｊ−，Ｌ Ｓ）るかかＪｉｌ）究・開発の第１の目標と
ｒ（ってい４）。(O) Conventional technology Amorphous semiconductors such as amorphous silicon f, :#I e The cost per medium power generation IC is lower than that of conventional photovoltaic devices made of single crystal silicon. However, such amorphous optical d-C′ resistance device i″/ &:
['I'il know that the single-connection fascia fR1 converts light energy into direct air energy 4fI [! The biggest problem is that the optical conversion efficiency (η) is low when converting to T.71-)
Deori 6 Conventional Nikko City, how is the conversion efficiency ζl-1,
j-, L S) Rukaka Jil) The first goal of research and development and r (Itt 4).
一方７非晶宵光吊市１力装置償ｔｌ Ｉ：述の如き光電
変換効率の低率のみならず１強い）Ｙ−不・長時１１旧
１４（射した場合にＦ、配光゛屯変換効率が低下″弓イ
）ことか実験０勺にも７１梵忍された。On the other hand, 7 amorphous evening light hanging city 1 power device compensation tl I: not only the low rate of photoelectric conversion efficiency as mentioned above, but also 1 strong) The conversion efficiency decreased (Yumi), and even in the 0th experiment, it was 71 times worse.
Ｖ→ 発明の目的
本発明トシ斯ろ光電変換効率の低下、即ち劣化を防止す
るごとを目的として為されたもの一〇ある。V→ Purpose of the Invention According to the present invention, there are ten things which have been made for the purpose of preventing a decrease in photoelectric conversion efficiency, that is, deterioration.
以下（二図面を参照しつつ詳述−「る。Below (details are given with reference to two drawings).
に）発明の構成
第１１ｘ１は本発明の清水構造る・・示し、（１（はガ
ラス・耐熱フラスチソク等の焔噸Ｖ１目つ光透過性の４
板、（２）は該清ｌ坂（１）の−主１ｆｆ−二彼ｊ−７
され１こ酸化スズ。11x1 indicates the clear water structure of the present invention.
Board, (2) is the -main 1ff-2 of the Kiyoshi slope (1)
Tin oxide.
酸化インジウム・スズ等の透明宙、極膜＋ ＋３１は該
透明電極＠＋２１上にシランＳ ｉ Ｈ４等のグロー放
７ｈ：により形成された非晶質シリコン系の半導体層、
（４）はｄ亥半導体１１々（３１にに更（二重畳されπ
アルミニウム、チタン等の裏１ｍ電極膜である。A transparent layer made of indium tin oxide, etc., the electrode film + +31 is an amorphous silicon-based semiconductor layer formed on the transparent electrode @ +21 by glow emission of silane S i H4, etc.
(4) is a double folded semiconductor 11 (31)
This is a 1m back electrode film made of aluminum, titanium, etc.
而して、Ａ≦、発明の特徴をゴヒ記半４体層＋１１１の
組１７又にある。即ち、−１−記事ｊＱ体層（３１は光
入射４＋、ＩＩである透明７ｈ極脱（２１イ［１１１が
らＰ）（り層（３ｐ）、Ｉ型（真性）層（６１）及びＮ
型層（ろｎ）χＩｌｌ［ｉ次稍層せしめ之Ｐ Ｉ Ｎ払
合型構命ネコ持ち、す１に詳１．〈はＰ型層（５Ｐ）し
７丁シランＳ’ｆ丁１４７０％【二対しろ０％のメタン
ＣＩ＋ ４）にドー＝ピングガスとして０３％ジボラン
Ｂ２Ｈ６￥含む′３囲気中でのグロー放電により形成さ
れに非晶゛Ｇシリコンカーバイド（ａ−８１ｘＣ１−ｘ
）から；戊り、■型層（５１）はＳｉＨ４ガスに第■族
元素例えは￥ｉ累Ｎ−＋１ンＰ、（此Ｘ Ａ ｓ 、ア
ンチモンｓｂなどの水軍化カス（ＮＨＰＨ３、Ａ ＳＨ
３、Ｓ、 ｂ Ｈう）ヶ法′ケ１（１に添５ ＋
加した混合カス雰囲気中で形成された第■族元素と非晶
質シリコンとの化合物かｌ；）成り、そしてＮ型層Ｃ３
ｎ）＆−ＪＳｉＨ４ガスにホスフィ／ Ｐ Ｈ３杢−上
記Ｎ型層（６１月二添加される場合に較べ凶かに多猷例
えは１ｑ６加えて形［戊さオｔた非晶′ｄシリコン（ａ
−８ｉ：Ｈ）からＪ’Ａ’； １ｉ１２されている。こ
の様にＳｉＨ４χ土１戊分とＴ Ｚ：）雰囲気中でのグ
ロー放電、により形成された上記Ｐ型層（ろｐ）−１型
層（５１）及びＮ型層（５ｎ）の各１漠１９は例えば１
００Ａ−５０００ス−５００Ａｌ：設定さオＬでいる。Therefore, A≦, the characteristics of the invention are in the set 17 of Gohiki half 4 body layers + 111. That is, -1- article jQ body layer (31 is light incidence 4+, II transparent 7h polar desorption (21i
Type layer (Lon) 〈 is a P-type layer (5P) formed by glow discharge in an atmosphere containing 03% diborane B2H6 as a doping gas in 7 silane S'f 1470% (0% methane CI + 4) as a doping gas. In addition, amorphous G silicon carbide (a-81xC1-x
), the ■-type layer (51) is SiH4 gas, Group ■ elements, for example, ￥i N-+1P, (this X A s, antimony sb, etc.
3, S, b H) method'ke 1 (a compound of group Ⅰ elements and amorphous silicon formed in a mixed gas atmosphere with 5 + added to 1;), and N-type. Layer C3
n) &-JSiH4 gas to phosphine/PH3 heather - the above N-type layer (61/2) compared to the case where 1q6 is added to the amorphous silicon ( a
-8i:H) to J'A'; 1i12. In this way, one layer each of the P-type layer (rop)-1 type layer (51) and the N-type layer (5n) formed by one infusion of SiH4χ and glow discharge in a TZ:) atmosphere was formed. For example, 19 is 1
00A-5000S-500Al: Set to OL.
弔２内は上述の如き構成にある光起電力装置に於いて、
窒素ＮのＮ型層（５３月二於ける含仔量をパラメータと
して光重、変換効袢′（η〕の経時変化を測定した特性
図である。同図に於い℃、縦軸は窒素Ｎの含何Ｍそのも
のにより膜質か変化Ｔるために、該光電変換効率（η）
を初期値で規格化したものであり、横軸は５００ｍＷ／
ｃｍｏ）Ａ Ｍ −１光の照射時間である。Inside the funeral hall 2, there is a photovoltaic device configured as described above.
This is a characteristic diagram in which changes in light weight and conversion efficiency (η) over time were measured using the N-type layer (η) of nitrogen N as a parameter. In the figure, the vertical axis is nitrogen Since the film quality changes depending on the N content and M itself, the photoelectric conversion efficiency (η)
is normalized to the initial value, and the horizontal axis is 500mW/
cmo) A M -1 light irradiation time.
尚、測定に供せられた光起電力装置の窒素Ｎの含仔量は
以下０月１ねりである。The amount of nitrogen N contained in the photovoltaic device used for measurement is as follows.
上記Ｎ含有団はＮ型層（３ｉ ） ？）・形１ｊｌｊさ
れるずｊ゛囲気中の混合ガス比率である。Is the above N-containing group an N-type layer (3i)? )・Form 1jlj is the mixed gas ratio in the surrounding air.
Ｓｉ上４＋ＮＨ３ により与えられている。Si top 4+NH3 It is given by
この様（ミ発′市即ち、光電変換効率（η〕に寄１４．
７る電子及び正孔対が土として発生り、／ ？Ｆ、 ｊ
ｒｌ１体層（３１の大部分を占めるＮ型層（３１）に窒
素Ｎン添加Ｔると、光電変換効率（η）の劣化特性は変
動し、しかもその変動幅は窒素Ｎの添加惜乞増せば増Ｔ
はど縮小Ｔるものではなく、上記測定結果によれは試料
（Ｑ）の１９５の時最小の変動幅θ）得ろれ、試料（、
ｂ Ｊ及び（ｄ）に於い−（−も略満足のいく結果か得
られた。然し乍ら、試オ、１（ｏ〕の９１１＜窒素Ｎの
含仔叶が１０．影にも４ｃり）とηの劣化ｔｗ ４′ｓ
素Ｎｋ裁まない試料（ａＪと殆と変り７：ｃ＜ａす。In this way, the photoelectric conversion efficiency (η) is 14.
7 electron and hole pairs are generated as soil, / ? F, j
When nitrogen is added to the N-type layer (31), which occupies most of the rl1 body layer (31), the deterioration characteristics of the photoelectric conversion efficiency (η) fluctuate, and the width of the fluctuation is greater than the addition of nitrogen. Increase T
According to the above measurement results, the minimum fluctuation width θ) is obtained when the sample (Q) is 195, and the sample (,
b In J and (d) - (- also obtained almost satisfactory results. However, in the trial O, 911 of 1 (o) < Nitrogen N N content was 10. There was also 4 c in the shadow) and the deterioration of η tw 4's
Raw Nk uncut sample (almost different from aJ 7: c<a).
また膜質も悪化し初期特性も低下１−イ）ので好ましく
ない。Further, the film quality deteriorates and the initial characteristics also deteriorate (1-a), which is not preferable.
従って、ｌ：述の如く第Ｖ族元素として窒素Ｎヶ含んだ
光起電力装置ｙ１にあっては、その含ローｌｊｔは約（
１，５５５〜５９Ｓか好）藺である。また上述の範囲内
で含を１社を光入射側から漸次減少ｕしと）ても良い。Therefore, l: As mentioned above, in the photovoltaic device y1 containing nitrogen N as a group V element, the content ljt is approximately (
1,555-59S or good). Further, within the above-mentioned range, one company may be gradually decreased from the light incident side.
尚、リンＰ、（ＪＦ、累ＡＦＩ、アンチモンｓｂは周知
の如くＮ型決定不純物であるので、 、！Ｉ）ｉイ）Ｎ
型決定不純物をＮ型層（６ｊ）に含有セ［７める場合、
その含有隈が増大すると１型層（ろ３）に膜υ１の劣化
を招くためにその１妙にＮ型層（３ｎＪのそれより通か
に少ｈ）に１−る必要があり、’ＩＰｌ’ｍ〜５υＯＰ
Ｐ’ｍ程度か適当で８）す、好ましく ｌｅｔ ｒｑ
）４すＩｖ／＋ （３ｎ）の１／１００以下か良い。従
って本発明に於いて称せられる「１型（真性）」とは真
のＩ型ではなく僅かにＮ型の性質ン呈よる。As is well known, phosphorus P, (JF, cumulative AFI, and antimony sb) are N-type impurities, so ,!I)i)N
When type-determining impurities are included in the N-type layer (6j),
If its content increases, it will cause deterioration of the film υ1 in the 1-type layer (filter 3), so it is necessary to add 1-1 to the N-type layer (which is generally smaller than that of 3nJ). 'm~5υOP
P'm or whatever is appropriate 8), preferably let rq
) 4sIv/+ (3n) 1/100 or less is good. Therefore, the "type 1 (intrinsic)" referred to in the present invention does not exhibit true type I properties, but slightly N type properties.
ホ１ 効 果
本発明つＹ：４℃小力装置は以りの説明から明らかな如
く、光′申に寄４ Ｎ−る市、子及びま７こは正孔対ケ
光生Ｔろ非晶質シリコン系の半２４４体層は徽尾の第Ｖ
族元素ゲ含んでいるので、光照１ｆｌににるｊ’ｃ：
′ｌ′ｉ＜変換効率の劣化ゲ防止−（ることかでき、今
まで研究開発の第１の目標とされ又い１こ光′串、斐換
効率ン違った観点から実°面的に上昇せしめることかで
きる。Effects of the present invention: As is clear from the following explanation, the 4°C low-force device of the present invention has a positive effect on light production. The semi-244 silicon-based layer is Hui's V.
Since it contains group elements, it is included in the light 1fl j'c:
Prevention of deterioration of conversion efficiency - (This has been the primary goal of research and development until now.) It is possible to make it rise.
第１１゛ズ１は本発明装置の断面図、４８２図は光′市
変換効率の経時変化ン測定し定時性ｆｉｌで、山は＆機
。
（３１は半導体層、を夫々示していく）。
出１ｉ；Ｉｒｉ入三洋電ト戊株式会社、。
、・、４゛ゝ
化１１１！入 プｆ理士 佐野蹟４戸、１、 ：第１
＋、１11th item 1 is a cross-sectional view of the device of the present invention, and Figure 482 shows the time-dependent change in the optical conversion efficiency of the filtrate. (31 indicates a semiconductor layer, respectively). Out 1i; Iri in Sanyo Electric Co., Ltd. ,・,4゛ゝification 111! Iruru F. Sanoseki 4 units, 1: 1st
+, 1
Claims (1)
用′ＡＶＢ、刃装置ｉｇに於いて、を記事導体層はｉｇ
’Ｑ ＋秤の用■族元累を含み、光照ｑｔによる光重、
変１勢効率の劣化ケ防１にしたことを特徴とＴる光量′
ＰＩｉ力装置。 ＋２１ −ｆ：記事導体層（二含有される第■族元累は
室累であって、その含有量は約０５ｇ５〜．ううである
ことを特徴とする特許請求の範囲＋゛ｒ＋ １ｑ°ｆ記
＋ｌｊ１．−のうＹ：起電力装置２、 （３１−ヒ配半導体層に含何される第■族元累しまリン
、イ此素、アンチモン等のＮ型決定不純物の何れか一種
であって、その含有量はｌｐｐｍ〜５００ＰＰｍ程度で
あることン特徴とした特許請求の範囲＠１項紀峨の光起
電力装置。[Claims] (11 Amorphous silicon-based semiconductor layer 12 In the AVB, blade device ig, the article conductor layer is ig
'Q + scale usage ■ Includes family Genshu, Mitsushige by Mitsuteru qt,
The light intensity is characterized by the fact that it prevents deterioration of efficiency.
PIi power device. +21 -f: Article conductor layer (claims characterized in that the group Ⅰ elements contained in the second conductor layer are silica, and the content thereof is about 0.5g5 to .05g) +゛r+1q°f Note +lj1.- Y: Electromotive force device 2, (31- Any type of N-type determining impurity such as phosphorus, iron, antimony, etc., which is the sum of group Ⅰ elements contained in the argon semiconductor layer) The photovoltaic device of Claims@Claim 1 of Noriga is characterized in that the content thereof is about 1 ppm to 500 PPm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165501A JPS5954274A (en) | 1982-09-22 | 1982-09-22 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57165501A JPS5954274A (en) | 1982-09-22 | 1982-09-22 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5954274A true JPS5954274A (en) | 1984-03-29 |
Family
ID=15813586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57165501A Pending JPS5954274A (en) | 1982-09-22 | 1982-09-22 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5954274A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681984A (en) * | 1985-04-11 | 1987-07-21 | Siemens Aktiengesellschaft | Solar cell comprising a semiconductor body formed of amorphous silicon and having a layer sequence p-SiC/i/n |
| US4692558A (en) * | 1983-05-11 | 1987-09-08 | Chronar Corporation | Counteraction of semiconductor impurity effects |
| US4734379A (en) * | 1985-09-18 | 1988-03-29 | Fuji Electric Corporate Research And Development Ltd. | Method of manufacture of solar battery |
| FR2615327A1 (en) * | 1987-03-27 | 1988-11-18 | Sanyo Electric Co | Photovoltaic device |
| US5246744A (en) * | 1990-11-30 | 1993-09-21 | Central Glass Company, Limited | Method of forming thin film of amorphous silicon by plasma cvd |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
| JPS56100486A (en) * | 1980-01-14 | 1981-08-12 | Fuji Photo Film Co Ltd | Photoelectric conversion element |
| JPS56138970A (en) * | 1980-03-31 | 1981-10-29 | Agency Of Ind Science & Technol | Amorphous photoelectric converting element and manufacture thereof |
| JPS5778183A (en) * | 1980-09-09 | 1982-05-15 | Energy Conversion Devices Inc | Photoresponse amorphous alloy and method of producing same |
| JPS5790933A (en) * | 1980-11-27 | 1982-06-05 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
-
1982
- 1982-09-22 JP JP57165501A patent/JPS5954274A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
| JPS56100486A (en) * | 1980-01-14 | 1981-08-12 | Fuji Photo Film Co Ltd | Photoelectric conversion element |
| JPS56138970A (en) * | 1980-03-31 | 1981-10-29 | Agency Of Ind Science & Technol | Amorphous photoelectric converting element and manufacture thereof |
| JPS5778183A (en) * | 1980-09-09 | 1982-05-15 | Energy Conversion Devices Inc | Photoresponse amorphous alloy and method of producing same |
| JPS5779672A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Photoresponsive amorphous alloy and method of producing same |
| JPS5790933A (en) * | 1980-11-27 | 1982-06-05 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4692558A (en) * | 1983-05-11 | 1987-09-08 | Chronar Corporation | Counteraction of semiconductor impurity effects |
| US4681984A (en) * | 1985-04-11 | 1987-07-21 | Siemens Aktiengesellschaft | Solar cell comprising a semiconductor body formed of amorphous silicon and having a layer sequence p-SiC/i/n |
| US4734379A (en) * | 1985-09-18 | 1988-03-29 | Fuji Electric Corporate Research And Development Ltd. | Method of manufacture of solar battery |
| FR2615327A1 (en) * | 1987-03-27 | 1988-11-18 | Sanyo Electric Co | Photovoltaic device |
| US5246744A (en) * | 1990-11-30 | 1993-09-21 | Central Glass Company, Limited | Method of forming thin film of amorphous silicon by plasma cvd |
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