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JPS59160926A - Pressure switch - Google Patents

Pressure switch

Info

Publication number
JPS59160926A
JPS59160926A JP3435583A JP3435583A JPS59160926A JP S59160926 A JPS59160926 A JP S59160926A JP 3435583 A JP3435583 A JP 3435583A JP 3435583 A JP3435583 A JP 3435583A JP S59160926 A JPS59160926 A JP S59160926A
Authority
JP
Japan
Prior art keywords
circuit
pressure sensor
type semiconductor
pressure
diffusion type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3435583A
Other languages
Japanese (ja)
Inventor
均 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOPARU EREKUTORA KK
Original Assignee
KOPARU EREKUTORA KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOPARU EREKUTORA KK filed Critical KOPARU EREKUTORA KK
Priority to JP3435583A priority Critical patent/JPS59160926A/en
Publication of JPS59160926A publication Critical patent/JPS59160926A/en
Pending legal-status Critical Current

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  • Switches Operated By Changes In Physical Conditions (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 この出願の発明は、圧力スイッチに関するものである。[Detailed description of the invention] The invention of this application relates to a pressure switch.

特に拡散型半導体圧力センサを採用した圧力スイッチに
関する。
In particular, the present invention relates to a pressure switch that employs a diffusion type semiconductor pressure sensor.

従来より使用されている圧力スイッチは、圧力印加によ
って生じる弾性体の変形を拡大して電気接点等を用い−
C1その開閉をなす構成のものが多く、複雑な機械的構
造を有すると共に重い重量と太き形状のものとなり、更
には高精注、長寿命のものを得ることは困難であった。
Conventionally used pressure switches use electric contacts, etc. to magnify the deformation of an elastic body caused by pressure application.
C1 Many of them have a structure that opens and closes, and they have a complicated mechanical structure, are heavy, and have a thick shape.Furthermore, it has been difficult to obtain products with high precision casting and long life.

また拡散型半導体圧力センサは圧力→電気変換における
高精度、高信頼性が一応確認されてはいるが、その使用
においては、1駆動回路、増巾回路等を使用した主とし
て高一度な圧力計測に利用されているにすぎない。
In addition, although diffusion-type semiconductor pressure sensors have been confirmed to have high accuracy and high reliability in pressure-to-electricity conversion, their use is mainly limited to high-level pressure measurements using single drive circuits, amplification circuits, etc. It's just being used.

上述のような問題点を解決すべく新規に工夫された本願
の発明は、拡散型半導体圧力センサと電子回路とを一体
[ヒして同一・ξツケージとして構成するようになし、
拡散型半導体の特注とこれに用いられる電子回路とを綜
合してその相乗的効果を撥挿せしめることを目的とブる
The invention of the present application, which has been newly devised to solve the above-mentioned problems, is configured such that a diffusion type semiconductor pressure sensor and an electronic circuit are configured as one and the same package.
The purpose is to integrate custom-made diffused semiconductors and the electronic circuits used in them, and to achieve a synergistic effect.

然してその要旨は、外部で温度補償を施した拡散型半導
体圧力センサとこれを駆動する電源、増巾器、比較回路
、設定回路等よりなる超小型電子回路を)ξソケージ内
に組込んだ圧力スイッチの構成にある。又この構成の圧
力スイッチは負圧、絶対圧などのものも考えられ、従っ
て真空スイッチ、気圧スイッチ等の構成が容易に実現で
きる等の特徴を持っている。
However, the gist of this is that a microelectronic circuit consisting of an externally temperature-compensated diffusion-type semiconductor pressure sensor, a power source to drive it, an amplifier, a comparator circuit, a setting circuit, etc.) is incorporated into a pressure sensor. It's in the switch configuration. Moreover, the pressure switch having this structure can also be used for negative pressure, absolute pressure, etc., and therefore has the feature that the structure of a vacuum switch, an atmospheric pressure switch, etc. can be easily realized.

以下誰何図面を参照してこの出願の発明の詳細な説明す
る。
The invention of this application will be described in detail below with reference to the drawings.

第1図(は本発明実施例の構成を図示する。FIG. 1 illustrates the configuration of an embodiment of the present invention.

ハウジング2の前面の一側に導圧)ξイブ4を接続し他
11111に裏蓋6を具えたキャンプ8か配設され、図
示してないが、圧力(はチューブ等を介して導圧)ぐイ
ブ4に導入される。前記裏蓋6の内i++:+面のキャ
ンプ8内部には拡散半導体抵抗網によるブリフヂを形成
する拡散半導体圧力センサテンプ10か収容配設される
。この圧力上ンサテソプ((より圧力−電気変換が実現
される。次に拡散性半導体の欠点の一つである大きい温
度依存性を補償するため+’im複数の抵抗器(図示せ
ず)を具えた厚膜補償抵抗基板12を前記センサテンプ
l ’Q K接続する。
A camp 8 with a back cover 6 is connected to one side of the front surface of the housing 2, and a camp 8 with a back cover 6 is connected to the other side. Introduced in Guibu 4. Inside the camp 8 on the i++:+ side of the back cover 6, there is housed a diffused semiconductor pressure sensor balance 10 forming a bridge formed by a diffused semiconductor resistor network. Pressure-to-electricity conversion is realized on this pressure sensor.Next, in order to compensate for the large temperature dependence, which is one of the drawbacks of diffusive semiconductors, multiple resistors (not shown) are provided. The thick film compensating resistor substrate 12 is connected to the sensor template l'QK.

前記のように拡散半導体圧力センサテンプ10、補償抵
抗基板12等をキャンプ8内に収容した構成を拡散型半
導体圧カセ/すAと称する。・・イブリッド基板14は
抵抗基板12とほぼ直角をなすように、ノ・ウジフグ2
内の長手方向に設けられる。
The structure in which the diffused semiconductor pressure sensor balance 10, the compensation resistance substrate 12, etc. are accommodated in the camp 8 as described above is referred to as a diffused semiconductor pressure cassette/suspension A. ...The hybrid board 14 is placed at a right angle to the resistor board 12,
It is provided in the longitudinal direction of the inside.

この基板には第2図に図示の21イブリツドICが配設
される。符号16は拡散型半導体圧力センサテンプIO
と補償抵抗基板12を、又符号18.20はハイブリッ
ド基板14と補償抵抗基板12をそれぞれ接続する導線
である。尚ノ・ウジフグ2後面を閉鎖した裏蓋22の孔
部24より外部リード線26か引出される。又電子回路
を外部よシ所望の圧力に設定調整可能な設定回路全構成
する可変抵抗器28並に動作表示灯30はそれぞれ第1
図(B)において図示のように、ノ・ウノング2裏蓋6
に配設される。
21 hybrid ICs shown in FIG. 2 are arranged on this board. Reference numeral 16 is a diffusion type semiconductor pressure sensor temp IO
and the compensation resistance board 12, and numerals 18 and 20 are conductive wires connecting the hybrid board 14 and the compensation resistance board 12, respectively. An external lead wire 26 is pulled out from a hole 24 in a back cover 22 that closes the rear surface of the Uji Puffer 2. In addition, the variable resistor 28 and operation indicator light 30, which make up the entire setting circuit that can be set and adjusted to a desired pressure by externally controlling the electronic circuit, are connected to the first
As shown in Figure (B), the No Unong 2 back cover 6
will be placed in

第2図は、本発明の実施例の構成を示すブロック回路図
である。前述の拡散型半導体圧力センサAは、1駆動回
路Bにより、駆動される。従ってセンザ用として特別の
電源を必要としない。前記センサ出力は増巾回路Cによ
り増巾される。一方圧力スイッチの設定回路りは可変抵
抗器28を用いて所望の圧力に設定可能である。増巾さ
れた@記センサの出力は、任意に設定された信号と比較
回路I“〕において比較することにより、出力回路Fを
開!閑する。商符号Pは圧力、0は出力電気信号を示す
FIG. 2 is a block circuit diagram showing the configuration of an embodiment of the present invention. The above-mentioned diffusion type semiconductor pressure sensor A is driven by a drive circuit B. Therefore, no special power source is required for the sensor. The sensor output is amplified by an amplification circuit C. On the other hand, the pressure switch setting circuit can be set to a desired pressure using a variable resistor 28. The amplified output of the sensor @ is compared with an arbitrarily set signal in the comparison circuit I" to open the output circuit F. The quotient code P is the pressure, and 0 is the output electrical signal. show.

第3図は、本発明の実施例に係る電子回路図である。図
中符号、鳩はオペアンプ、A2は定電圧ICを又りはダ
イオード、R1は抵抗、 ’t”rはトランジスタを示
す。
FIG. 3 is an electronic circuit diagram according to an embodiment of the present invention. In the figure, the symbols and doves represent operational amplifiers, A2 represents a constant voltage IC or a diode, R1 represents a resistor, and 't''r represents a transistor.

尚本発明の実施例においては最適の構成としてハイブリ
ッド基板(・て所望のハイブリッドICが配設されてな
る場合について説明したが、電子回路基板であれば、必
ずしもハイプリントIQi配設した基板を使用しなくて
も、本実施例と同様に、本発明の目的全達成できること
は勿論である。
In the embodiments of the present invention, the optimal configuration is a hybrid board (on which a desired hybrid IC is arranged), but if it is an electronic circuit board, a board on which a high print IQi is arranged is not necessarily used. Of course, even if this is not done, all the objectives of the present invention can be achieved in the same manner as in this embodiment.

上述の説明で明白である通り、本発明に係る圧カスイソ
チは真空スイッチ、気圧スイッチとして採用できると共
に拡散型半導体圧力センサと電子回路を一体となすこと
により、拡散型半導体圧力センサの有する特注を充分に
生かし/辷もので、高精能、小型軽量の取扱い容易等の
種々の効果を有する。
As is clear from the above description, the pressure gas switch according to the present invention can be used as a vacuum switch or an air pressure switch, and by integrating a diffusion type semiconductor pressure sensor and an electronic circuit, it can fully accommodate customization that a diffusion type semiconductor pressure sensor has. It has various effects such as high precision, small size and light weight, and easy handling.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明に係る圧カスインチの構造を示すもので
、同体)は田カスインチの縦断面図、同(■3)は同(
A)を矢印の方向より見た側面図。 第2図はブロック回路図。第3図は電子回路図。 A・・拡散型半導体圧力センサ、R3・駆動回路、C・
・・増巾回路、D・・・設定′回路、E・・・比較回路
、F・・出力回路、2 ノ・ウジング、 4・・・導圧ノミイブ、8・ キャンプ、10・・圧力
センサーチップ、 12・・・補償抵抗基板、14 ・ノ・イブリント基板
Figure 1 shows the structure of the pressure cutter inch according to the present invention.
A side view of A) viewed from the direction of the arrow. Figure 2 is a block circuit diagram. Figure 3 is an electronic circuit diagram. A. Diffusion type semiconductor pressure sensor, R3, drive circuit, C.
・・Amplifying circuit, D・・Setting circuit, E・・Comparison circuit, F・・Output circuit, 2・Nothing, 4・・Pressure adjustment, 8・・Camping, 10・・・Pressure sensor chip , 12... compensation resistance board, 14 - no-event board.

Claims (1)

【特許請求の範囲】 1、温度補償可能な拡散型半導体圧力センサ、駆動回路
、増1]回路、比較回路、設定回路、出力回路をパンケ
ージとして構成してなる圧カスイノチにおいて、導入孔
を具えたキャンプ状容器内(で配設された拡散型半導体
圧力センサテンプと拡散型半導体圧力センサの温度補償
抵抗基板と電子回路基板とを/・ウジング内に収容して
なる構成。 2、・・イブリントIC基板を具えた特許請求の範囲第
1項に記載の圧力スイッチ。
[Scope of Claims] 1. Temperature-compensable diffusion type semiconductor pressure sensor, drive circuit, expansion 1] A pressure gauge in which a circuit, a comparison circuit, a setting circuit, and an output circuit are configured as a pan cage, which is provided with an introduction hole. A configuration in which a diffusion type semiconductor pressure sensor temp, a temperature compensation resistance board of the diffusion type semiconductor pressure sensor, and an electronic circuit board arranged in a camp-like container are housed in a housing. 2. Evelint IC A pressure switch according to claim 1, comprising a substrate.
JP3435583A 1983-03-04 1983-03-04 Pressure switch Pending JPS59160926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3435583A JPS59160926A (en) 1983-03-04 1983-03-04 Pressure switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3435583A JPS59160926A (en) 1983-03-04 1983-03-04 Pressure switch

Publications (1)

Publication Number Publication Date
JPS59160926A true JPS59160926A (en) 1984-09-11

Family

ID=12411844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3435583A Pending JPS59160926A (en) 1983-03-04 1983-03-04 Pressure switch

Country Status (1)

Country Link
JP (1) JPS59160926A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212833U (en) * 1985-07-10 1987-01-26
JPH0277834U (en) * 1988-12-03 1990-06-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212833U (en) * 1985-07-10 1987-01-26
JPH0277834U (en) * 1988-12-03 1990-06-14

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