JPH0814517B2 - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0814517B2 JPH0814517B2 JP62310513A JP31051387A JPH0814517B2 JP H0814517 B2 JPH0814517 B2 JP H0814517B2 JP 62310513 A JP62310513 A JP 62310513A JP 31051387 A JP31051387 A JP 31051387A JP H0814517 B2 JPH0814517 B2 JP H0814517B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- container
- pressure
- operational amplifier
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ピエゾ抵抗効果を利用して半導体ダ
イヤフラムに加わる圧力により生ずる電気信号を増幅し
て圧力を検出する半導体圧力センサに関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor pressure sensor that utilizes a semiconductor piezoresistive effect to amplify an electric signal generated by pressure applied to a semiconductor diaphragm to detect the pressure.
半導体圧力センサでは、半導体のピエゾ抵抗効果を利
用するために半導体ダイヤフラム部に拡散抵抗のブリッ
ジを形成するが、そのブリッジ部の出力は数十mVである
ため、その信号を増幅する必要がある。信号増幅のため
の演算増幅器および抵抗回路網は、圧力センサ素子の端
子と外部で接続してもよいが、部品数の減少および装置
の小型化のためには第２図のようにダイヤフラム部を有
する感圧素体と同一容器内に収容される。第２図（ａ）
において、シリコン感圧素体１は底部21と蓋部22からな
る容器２内に収容され、下面には底部21を貫通する導圧
管３からシリコン台座４を介して圧力が加わる。容器２
内の空間20には封入管23の封じ切りにより一定の圧力が
保たれている。第２図（ｂ）は感圧素体１の構造を示
し、例えばｎ形シリコンチップ11の中央に形成されたダ
イヤフラム部12に４個のｐ形ピエゾ抵抗13が形成され、
酸化膜14の開口部で接触する配線15によりブリッジ接続
されている。配線は窒化膜16が被覆している。容器２内
には、底部21にスペーサ24を介して支持される厚膜抵抗
印刷基板５が収容され、その上に演算増幅器６が実装さ
れていて、基板５上の厚膜抵抗回路網と演算増幅器６に
よって構成される増幅回路と導線８により接続すること
により、ピエゾ抵抗13からなるブリッジの出力信号の増
幅および各種の温度補償が行われ、圧力センサ出力は容
器底部21をガラス封止部25を通じて貫通する端子７から
引き出される。In the semiconductor pressure sensor, a bridge of diffusion resistance is formed in the semiconductor diaphragm part in order to utilize the piezoresistive effect of the semiconductor, but since the output of the bridge part is several tens of mV, it is necessary to amplify the signal. The operational amplifier and the resistor network for signal amplification may be connected to the terminals of the pressure sensor element externally, but in order to reduce the number of parts and downsize the device, a diaphragm portion is used as shown in FIG. It is accommodated in the same container as the pressure sensitive element. Fig. 2 (a)
In FIG. 1, the silicon pressure sensitive element 1 is housed in a container 2 having a bottom portion 21 and a lid portion 22, and pressure is applied to the lower surface from a pressure guiding tube 3 penetrating the bottom portion 21 via a silicon pedestal 4. Container 2
A constant pressure is maintained in the inner space 20 by closing off the sealing tube 23. FIG. 2B shows the structure of the pressure-sensitive element body 1. For example, four p-type piezoresistors 13 are formed on the diaphragm portion 12 formed at the center of the n-type silicon chip 11.
A bridge connection is formed by a wiring 15 that is in contact with the opening of the oxide film 14. The wiring is covered with the nitride film 16. A thick film resistor printed circuit board 5 supported on a bottom portion 21 by a spacer 24 is accommodated in the container 2, and an operational amplifier 6 is mounted thereon, and a thick film resistor circuit network on the substrate 5 and operation are performed. By connecting the amplifying circuit constituted by the amplifier 6 with the conducting wire 8, the output signal of the bridge constituted by the piezoresistor 13 is amplified and various temperature compensation is performed, and the pressure sensor output is obtained by connecting the container bottom 21 to the glass sealing portion 25. Through the terminal 7 penetrating therethrough.
第３図（ａ），（ｂ）はさらに進めた従来の圧力セン
サで、感圧素体１には第３図（ｂ）に示すように、ピエ
ゾ抵抗13を有するダイヤフラム部11の周囲の厚さの厚い
部分12に分離層17を介して演算増幅器６が形成され、配
線15により抵抗13のブリッジと接続されるとともに、第
３図（ａ）に示すように接続導線８により厚膜抵抗印刷
基板５の抵抗回路網と接続されている。3 (a) and 3 (b) show a further advanced conventional pressure sensor. As shown in FIG. 3 (b), the pressure sensor element 1 has a thickness around the diaphragm portion 11 having a piezoresistor 13. The operational amplifier 6 is formed in the thick portion 12 through the separation layer 17, connected to the bridge of the resistor 13 by the wiring 15, and thick-film resistance printing is performed by the connecting conductor 8 as shown in FIG. 3 (a). It is connected to the resistive network of the substrate 5.
半導体圧力センサの小型化，軽量化および低価格化に
対する要望はさらに強いものがあり、上記の従来の構造
でもなおそれらの要望を満足させることはできない。There is a strong demand for miniaturization, weight reduction, and cost reduction of the semiconductor pressure sensor, and the above-described conventional structure still cannot meet those demands.
本発明の目的は、この点に鑑みさらに小型で安価な半
導体圧力センサを提供することにある。In view of this point, an object of the present invention is to provide a semiconductor pressure sensor that is smaller and cheaper.
上記の目的を達成するために、本発明による半導体圧
力センサは、ピエゾ抵抗の形成されるダイヤフラム部を
有する半導体素体に、該ダイヤフラム部の周囲に分離層
を介して演算増幅器およびけい化クロムの薄膜抵抗より
なる抵抗回路網を複合集積化し、容器底部と容器蓋部と
からなる容器内に該容器底部に固着した導圧管上のシリ
コン台座を介して半導体素体を固定し、容器底部を貫通
する引き出し端子に前記演算増幅器および抵抗回路網の
出力端が接続されるものとする。In order to achieve the above object, the semiconductor pressure sensor according to the present invention includes a semiconductor element body having a diaphragm portion in which a piezoresistor is formed, and an operational amplifier and a chromium silicide which are provided around the diaphragm portion via a separation layer. A resistor circuit network consisting of thin film resistors is integrated and fixed, and a semiconductor body is fixed in a container consisting of a container bottom and a container lid via a silicon pedestal on a pressure guiding tube fixed to the container bottom, and penetrates the container bottom. It is assumed that the output terminal of the operational amplifier and the resistor network is connected to the output terminal.
抵抗回路網も薄膜抵抗により感圧素体に集積すること
により、厚膜抵抗印刷基板が不要となり、小型化され、
導線による接続の手数も省略できる。By integrating the resistance circuit network into the pressure sensitive element by means of a thin film resistor, a thick film resistor printed circuit board is not required
It is also possible to omit the number of steps for connecting with a conductor.
第１図（ａ），（ｂ）に本発明の一実施例を示し、第
2,第３図と共通の部分には同一の符号が付されている。
第１図（ｂ）に示すように、感圧素体１には第２図
（ｂ）と同様にダイヤフラム部11の周囲部12に分離層17
を介して、図示されているnpnトランジスタなどの素子
からなる演算増幅器６が形成されているほかに、表面の
酸化膜14で絶縁して、例えばけい化クロムなどによる薄
膜抵抗９が形成されている。1 (a) and 1 (b) show an embodiment of the present invention.
2, the same parts as those in FIG. 3 are designated by the same reference numerals.
As shown in FIG. 1 (b), in the pressure-sensitive element body 1, as in FIG. 2 (b), a separation layer 17 is formed on the peripheral portion 12 of the diaphragm portion 11.
In addition to forming an operational amplifier 6 composed of an element such as an npn transistor shown in the figure, a thin film resistor 9 made of, for example, chromium silicide is formed by being insulated by an oxide film 14 on the surface. .
このような薄膜抵抗９を作成することによって、数十
μm2〜数百μm2の面積で数ｋΩ〜数百ｋΩの抵抗を作る
ことが出来るため、通常の圧力センサに要求される数十
倍の増幅度は容易に得られる。厚膜抵抗の場合の抵抗の
寸法は、数mm2〜数十mm2であるから、薄膜抵抗を使うこ
とにより第２図，第３図に示した従来の圧力センサの厚
膜抵抗基板に比較して面積は数十〜数百分の１に小型化
することが出来る。従って第１図（ａ）に示すように圧
力センサ素子は、導圧管３の上にシリコン台座４を介し
て感圧素体１を固定し、演算増幅器６および抵抗回路網
９からなる増幅回路の端子と容器底部21を貫通する引き
出し端子７を導線８で接続するだけでよく、図示のよう
に著しく小型になる。By making such a thin film resistor 9, it is possible to make a resistance of several kΩ to several hundred kΩ in an area of several tens of μm 2 to several hundreds of μm 2 , which is several tens of times that required for an ordinary pressure sensor. The amplification degree of is easily obtained. The thickness of the thick film resistor is several mm 2 to several tens of mm 2 , so by using the thin film resistor, it is possible to compare with the thick film resistor substrate of the conventional pressure sensor shown in FIGS. 2 and 3. Then, the area can be reduced to several tens to several hundreds. Therefore, as shown in FIG. 1A, in the pressure sensor element, the pressure sensitive element body 1 is fixed on the pressure guiding tube 3 via the silicon pedestal 4, and the pressure sensing element of the amplification circuit including the operational amplifier 6 and the resistance network 9 is formed. It suffices to connect the lead terminal 7 penetrating the terminal and the bottom 21 of the container with the conductor wire 8, and the size is remarkably small as shown in the figure.
そのほかに、薄膜抵抗９は窒化膜16で被覆後レザート
リマにより薄膜抵抗のみを選択トリミング可能であるの
で、圧力センサに要求される感度，零点および温度特性
の補償がチップ状態で可能となり、一層の低価格化が可
能となる。In addition, since the thin film resistor 9 can be selectively trimmed by the laser trimmer after being covered with the nitride film 16, the sensitivity, zero point and temperature characteristics required for the pressure sensor can be compensated in the chip state, and the lowering of the resistance can be achieved. It becomes possible to price.
本発明によれば、従来厚膜抵抗基板で形成していた抵
抗回路網を感圧素体に演算増幅器と共に集積するため、
外部回路なしで半導体圧力センサのすべての機能を同一
素体内に作ることが出来る。このため容器底部と容器蓋
部とからなる容器内の部品構成点数および組立工程の削
減がされ、高品質，小型，低価格のセンサが実現出来
る。また本構成の感圧素体は、小型，軽量であるため、
例えば車のエンジンに直接取付けるような応用において
も耐震性，耐熱性が良いので有効である。According to the present invention, since the resistance circuit network which is conventionally formed of the thick film resistance substrate is integrated with the operational amplifier in the pressure sensitive element,
All functions of the semiconductor pressure sensor can be built in the same element without external circuit. Therefore, the number of parts constituting the container, which is composed of the container bottom and the container lid, and the assembling process can be reduced, and a sensor of high quality, small size, and low price can be realized. Moreover, since the pressure-sensitive element of this configuration is small and lightweight,
For example, it is effective because it has good earthquake resistance and heat resistance even in applications where it is directly attached to the engine of a car.
第１図（ａ），（ｂ）は本発明の一実施例、第２図
（ａ），（ｂ）および第３図（ａ），（ｂ）はそれぞれ
異なる従来例を示し、いずれも（ａ）は圧力センサ容器
の断面図、（ｂ）はセンサ感圧素体の要部断面図であ
る。 1:感圧素体、11:ダイヤフラム部、13:ピエゾ抵抗、21:
容器底部、22:容器蓋部、3:導圧管、6:演算増幅器、7:
端子、9:薄膜抵抗。1 (a) and 1 (b) show an embodiment of the present invention, and FIGS. 2 (a) and 2 (b) and FIGS. 3 (a) and 3 (b) show different conventional examples. 3A is a cross-sectional view of the pressure sensor container, and FIG. 3B is a cross-sectional view of essential parts of the sensor pressure-sensitive element. 1: Pressure sensitive element, 11: Diaphragm part, 13: Piezoresistive, 21:
Container bottom, 22: Container lid, 3: Pressure tube, 6: Operational amplifier, 7:
Terminals, 9: Thin film resistor.
Claims (1)
有する半導体素体に、該ダイヤフラム部の周囲に分離層
を介して演算増幅器およびけい化クロムの薄膜抵抗より
なる抵抗回路網を複合集積化し、容器底部と容器蓋部と
からなる容器内に該容器底部に固着した導圧管上のシリ
コン台座を介して半導体素体を固定し、容器底部を貫通
する引き出し端子に前記演算増幅器および抵抗回路網の
出力端が接続されることを特徴とする半導体圧力セン
サ。1. A semiconductor element body having a diaphragm portion in which a piezoresistor is formed, and a resistance circuit network composed of an operational amplifier and a thin film resistor of chromium silicide is integrated and integrated around the diaphragm portion via a separation layer, A semiconductor element body is fixed in a container composed of a container bottom and a container lid via a silicon pedestal on a pressure guiding tube fixed to the container bottom, and a lead terminal penetrating the container bottom is connected to the operational amplifier and the resistor network. A semiconductor pressure sensor having an output terminal connected thereto.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62310513A JPH0814517B2 (en) | 1987-12-08 | 1987-12-08 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62310513A JPH0814517B2 (en) | 1987-12-08 | 1987-12-08 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01150832A JPH01150832A (en) | 1989-06-13 |
| JPH0814517B2 true JPH0814517B2 (en) | 1996-02-14 |
Family
ID=18006132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62310513A Expired - Lifetime JPH0814517B2 (en) | 1987-12-08 | 1987-12-08 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0814517B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2676962B2 (en) * | 1990-02-23 | 1997-11-17 | 富士電機株式会社 | Manufacturing method of pressure sensor |
| JP2623909B2 (en) * | 1990-05-10 | 1997-06-25 | 富士電機株式会社 | Semiconductor pressure-sensitive element |
| JPH05190872A (en) * | 1992-01-16 | 1993-07-30 | Oki Electric Ind Co Ltd | Semiconductor pressure sensor and manufacture thereof |
| JPH10148590A (en) * | 1996-11-19 | 1998-06-02 | Mitsubishi Electric Corp | Pressure sensor |
| JPH11211594A (en) * | 1998-01-28 | 1999-08-06 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
| JP4774678B2 (en) | 2003-08-29 | 2011-09-14 | 富士電機株式会社 | Pressure sensor device |
| JP4839648B2 (en) | 2005-03-23 | 2011-12-21 | 富士電機株式会社 | Pressure sensor device |
| ITRM20040532A1 (en) * | 2004-10-29 | 2005-01-29 | Univ Roma La Sapienza | THIN LAYER SILICON STRETCH MECHANICAL STRESS SENSOR. |
| JP2011082195A (en) * | 2008-02-04 | 2011-04-21 | Alps Electric Co Ltd | Semiconductor device and method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63241969A (en) * | 1987-03-30 | 1988-10-07 | Shindengen Electric Mfg Co Ltd | Semiconductor pressure sensor |
-
1987
- 1987-12-08 JP JP62310513A patent/JPH0814517B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01150832A (en) | 1989-06-13 |
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