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JPS5879715A - Chip type electrolytic condenser and method of producing same - Google Patents

Chip type electrolytic condenser and method of producing same

Info

Publication number
JPS5879715A
JPS5879715A JP17804081A JP17804081A JPS5879715A JP S5879715 A JPS5879715 A JP S5879715A JP 17804081 A JP17804081 A JP 17804081A JP 17804081 A JP17804081 A JP 17804081A JP S5879715 A JPS5879715 A JP S5879715A
Authority
JP
Japan
Prior art keywords
forming
insulating member
chip
anode
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17804081A
Other languages
Japanese (ja)
Inventor
白井 紘一
仲田 武彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP17804081A priority Critical patent/JPS5879715A/en
Publication of JPS5879715A publication Critical patent/JPS5879715A/en
Pending legal-status Critical Current

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  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明はチップ製電解コンデンサに関し1%にチップ型
電解コンデンサの電極取り出し構造およびその製造方法
に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a chip electrolytic capacitor, and more particularly to an electrode extraction structure of a chip electrolytic capacitor and a method for manufacturing the same.

近年、電子部品の実装技術の著しい進歩により尚M[化
さn、そnに伴ない電子部品のひとつとして電解コン゛
デンサに対する小振化の要求が高まってきている。従来
かかる要求を満たすために、提供さnた形状の電解コン
デン?O構造は、第1図に示すようにタンタル、アルミ
ニウム等の弁作用を有する金輌粉末に弁作用を有する陽
極リード6を植立し、所望形状に成形してなる陽極体1
上に誘電体酸化皮膜2、固体電解質層3および導電性対
向電極4を順次形成してコンデンサ素子を形成する。し
かる後、陽極リード6と陽極外部端子8とを直接、抵抗
溶接等の手段によ多接続させる。
In recent years, with remarkable progress in mounting technology for electronic components, demand has increased for smaller electrolytic capacitors as electronic components. What type of electrolytic capacitors have been provided to meet such demands? As shown in FIG. 1, the O structure includes an anode body 1 formed by planting an anode lead 6 having a valve action on a metal powder having a valve action such as tantalum or aluminum, and molding the anode lead 6 into a desired shape.
A dielectric oxide film 2, a solid electrolyte layer 3, and a conductive counter electrode 4 are sequentially formed thereon to form a capacitor element. Thereafter, the anode lead 6 and the anode external terminal 8 are directly connected by means such as resistance welding.

一方、陰極外部端子7線導電性対向電極4と導電性接着
材5を介して接続している。その後、陽極外部端子8お
よび陰極外部端子7のそrt(′n、一部t−残して、
樹脂などの絶縁部材9を施している。
On the other hand, the cathode external terminal is connected to a 7-wire conductive counter electrode 4 via a conductive adhesive 5. After that, the anode external terminal 8 and the cathode external terminal 7 are left ('n, with some t- left,
An insulating member 9 made of resin or the like is provided.

かかる従来構造では、外部端子の引出し圃が一面のみで
あp1実装時には一方向に限定さnる欠点を有するのみ
ならず、・最も重要な点は小屋化のために絶縁部材9を
薄くするか、コンデンサ素子の陽極体lを小さくするか
、あるいは、陽極リードの根元部6aと陽極外部端子8
との接続部88までの距離あるいは、陰極外部端子7の
引出し構造を変えることしか改善の余地鉱残されていな
かった。しかし%絶縁部材91″薄くすることは、耐湿
特性が劣化したり、コンデンサ素子が露出したり機械的
保護の役目が保てなくなるなどの欠点が生じる。またコ
ンデンサ素子を小さくすることは。
Such a conventional structure not only has the disadvantage that the external terminal extraction area is only on one side and is limited to one direction when mounting P1. , reduce the size of the anode body l of the capacitor element, or connect the root part 6a of the anode lead to the anode external terminal 8.
The only room for improvement was to change the distance to the connecting portion 88 or the structure of the cathode external terminal 7. However, making the insulating member 91" thinner has disadvantages such as deterioration of moisture resistance, exposure of the capacitor element, and inability to maintain the role of mechanical protection. Furthermore, making the capacitor element smaller is also disadvantageous.

定格電圧に対する陽極酸化電圧の比率を小さくしなけn
ばならず、コンデンサの信頼性の面で劣る欠点を有する
。それ故電解コンデンサの小型化には%陽極リードの根
元部6mから陽極外部端子8との接続部8aまでの距離
と陰極端子7とコンデンサ素子までの距離を短かくする
手段しか残されていない。
The ratio of anodizing voltage to rated voltage must be small.
However, it also has the disadvantage of inferior capacitor reliability. Therefore, in order to reduce the size of electrolytic capacitors, the only option left is to shorten the distance from the root portion 6m of the anode lead to the connection portion 8a with the anode external terminal 8 and the distance between the cathode terminal 7 and the capacitor element.

かかる構造の改良製として第2図に示すような陽極およ
び陰極の外部端子をキャップ状金属端子を用いたものが
ある。
As an improved version of this structure, there is one in which cap-shaped metal terminals are used as the external terminals of the anode and cathode, as shown in FIG.

これらは、前述同様にコンデンサ素子管形成した後、陽
極リー′ドロとキャップ状陽極金属端子10を浴接によ
ハまたコンデンサ素子とキャップ状−他金属端子11と
を導電性接着材5で各ム接続して、樹脂などの絶縁部材
9で外装している。
After forming the capacitor element tube in the same manner as described above, the anode lead wire and the cap-shaped anode metal terminal 10 are bath-bonded, and the capacitor element and the cap-shaped other metal terminal 11 are each bonded with a conductive adhesive 5. They are connected to each other and covered with an insulating member 9 made of resin or the like.

しかし、かかる改良渥構造のコンデンサもキャップ状陽
極金属端子lOと陽極リード6との接続を溶接手段を用
いているため、溶接点10mと陽極リードの根元部6a
の距離が短いと、溶接時の熱エネルギーによハ誘電体酸
化皮膜2が破壊さnる。従ってこnら誘電体酸化皮膜の
破壊を防ぐためには溶接点lOaと陽極リードの根元部
6aとの距離を長くとる必要がある。さらに陰極側にお
いてもキャップ状陰極金属端子11とコンデンサの接着
強度を高めるためにある程度の導電性接着材5の厚みが
必要となる。
However, since the capacitor with this improved structure also uses welding means to connect the cap-shaped anode metal terminal lO and the anode lead 6, the welding point 10m and the root part 6a of the anode lead
If the distance is short, the dielectric oxide film 2 will be destroyed by thermal energy during welding. Therefore, in order to prevent destruction of the dielectric oxide film, it is necessary to increase the distance between the welding point lOa and the root portion 6a of the anode lead. Further, on the cathode side as well, a certain degree of thickness of the conductive adhesive material 5 is required in order to increase the adhesive strength between the cap-shaped cathode metal terminal 11 and the capacitor.

また重要なこととして陽極および陰極のキャラ状端子の
接続工程が個々の単位で行なわなけ扛ばならず、美大な
工数を必要とする。しかも1両者間のねじt″LsLs
位置どが生じ、いわゆるフラ、ト性がそ仁なわれて寸法
精度をめけることが国難である欠点を有し、今後ますま
す増大する高精度・小皺化の要求に応えるための画期的
な!極取り出し手段が望まnている。
Another important point is that the process of connecting the anode and cathode character terminals must be carried out individually, requiring a large number of man-hours. Moreover, the screw between the two is t″LsLs
It has the drawback that dimensional accuracy is a national problem due to the occurrence of positional defects and the so-called flatness and torturous properties. What! A pole extraction means is desired.

本発明の目的はかかる要求を満たすチップ型電解コンデ
ンサおよびその製造方法を提供することにある。
An object of the present invention is to provide a chip-type electrolytic capacitor and a method for manufacturing the same that meet such requirements.

本発明によnば、弁作用を有する金属粉末に弁作用を有
する陽極リードt−植立し、所望形状に成型してなる陽
極体上に誘電体酸化皮膜、固体電解質ノー、導電性対向
電極を順次形成してなるコンデンサ素子において、上記
陽極リードの先端部および4電性対向電極の一部を露呈
するようにコンデンサ電子を絶縁部材で被覆し、その篇
呈部と上記杷縁部材上に無電解メッキ、イオンブレーテ
ィング、蒸着、スパッタリング、導電性樹脂の塗布のい
ずrLかの一手段によって形成された導電層と接続させ
たこと全特徴とする固体電解コンデンサおよびその製造
方法が得られる。
According to the present invention, a dielectric oxide film, a solid electrolyte, and a conductive counter electrode are provided on the anode body, which is formed by planting an anode lead T-shaped in a metal powder having a valve action and molding it into a desired shape. In a capacitor element formed by sequentially forming the anode lead, the capacitor electron is covered with an insulating member so as to expose the tip of the anode lead and a part of the tetraelectric counter electrode, and the capacitor electron is covered with an insulating member on the knitted part and the rim member. A solid electrolytic capacitor and a method for manufacturing the same are obtained, which are characterized in that the solid electrolytic capacitor is connected to a conductive layer formed by any one of electroless plating, ion blating, vapor deposition, sputtering, and coating of a conductive resin. .

以下本発明のチップW電解コンデンサおよびその製造方
法を図面を参照して詳しく説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The chip W electrolytic capacitor of the present invention and its manufacturing method will be described in detail below with reference to the drawings.

第3図は1本発明9一実施例であり1図中1はタンタル
、ニオブ、アルミニウムなどの弁作用をゼする金属粉末
を加圧底盤し、焼結してなる陽極体で特性によっては、
焼結操作を省略することもできる。6はm惚体lよシ導
出さnた陽極リードで5図示例線弁作用を有する金属の
線tたは板を陰極リードとして陽極体lに植立している
。2鉱陽極体1の表面に形成さnた誘電体酸化皮膜、3
はこの酸化皮膜2上に形成さrLe固体電解質層。
Figure 3 shows an embodiment of the present invention, and 1 in Figure 1 is an anode body made by pressing metal powder such as tantalum, niobium, aluminum, etc., which has a valve action, and sintering it.
It is also possible to omit the sintering operation. Reference numeral 6 denotes an anode lead drawn out from the body l, and a metal wire or plate having a valve action is planted on the anode body l as a cathode lead. a dielectric oxide film formed on the surface of the 2-mineral anode body 1;
is an rLe solid electrolyte layer formed on this oxide film 2.

4は陽極体lの大部分を覆う導電性対向電極である。導
電性対向電極4は、一般的にはグラファイト層および鯖
ペースト層によ多構成さnているが。
4 is a conductive counter electrode that covers most of the anode body l. The conductive counter electrode 4 is generally composed of a graphite layer and a mackerel paste layer.

他の導電部材例えば銅などをプラズマ溶射、イオンブレ
ーティングなどの手段により構成することもできる。9
は、陽極リード6の先端部6b及び゛導電性対向電極4
の一部4bが露出するように被層した絶縁部材で例えば
エポキシ樹脂、シリコン樹脂、ガラス、セラミックなど
の材料を用いる。
Other conductive materials such as copper may also be constructed by means of plasma spraying, ion blating, etc. 9
are the tip 6b of the anode lead 6 and the conductive counter electrode 4.
The insulating member is made of a material such as epoxy resin, silicone resin, glass, or ceramic, and is coated so that a portion 4b of the insulating member is exposed.

値覆手段として塗布、トランスファーモールド。Coating and transfer molding as a means of price reversal.

キャスティング、溶射などがめるが1寸法精度の高い製
品について扛J トランスファーそ−ルド。
For products with high dimensional accuracy, such as casting and thermal spraying, we offer transfer swords.

キャスティングなどの手段が好ましい、12は絶縁部材
9上に陽極リード6の先端部6bと電気的接続関係を有
するように被層さnた陽極用導電部材、13は絶縁部材
9上に導電性対向電極4の一部4bと電気的接続関係を
有するように被着さnた陰極用導′f/を部材である。
A method such as casting is preferable. 12 is a conductive member for an anode coated on the insulating member 9 so as to have an electrical connection with the tip 6b of the anode lead 6, and 13 is a conductive opposing member on the insulating member 9. A cathode conductor 'f/ is a member which is deposited so as to be electrically connected to a portion 4b of the electrode 4.

陽・陰極用導1部材12および13は、銅、銀およびニ
ッケルなど、の金属、銅−二、タルなどの合金などの半
田づけ可能な金属層でろシ、陽・陰極用導電部材12お
よび13は、同一の金属材料であってもよく、異種材料
であってもよい。
The anode/cathode conductive members 12 and 13 are made of solderable metal layers such as metals such as copper, silver and nickel, and alloys such as copper-2 and tal. may be the same metal material or may be different materials.

また、この陽・陰極用導電部材12および13上に半田
を被覆し、電極部材の酸化による半田付は性の省化を防
止した方が好ましい。
Further, it is preferable to coat the anode and cathode conductive members 12 and 13 with solder to prevent soldering due to oxidation of the electrode members.

次に本充明の一実施例をタンタル固体電解コンデンサの
製造方法について第4図(a)ν(b) = (c) 
t−参照して説明する。
Next, an example of the method of manufacturing a tantalum solid electrolytic capacitor according to the present invention is shown in Fig. 4 (a) ν (b) = (c)
This will be explained with reference to t-.

先ず、周知技術の如く、タンタル線からなる陽極リード
6を植立して高純度タンタル粉末を所望形状に加圧成型
したのち真空焼結してなる陽極体lを形成する。次いで
陽極体lの表面に電気化学的手段により、窮電体酸化皮
jl[2t−形成する。次に硝酸マンガン浴数中に浸漬
し、熱分解させ誘電体酸化皮膜2上に二酸化マンガンの
固体電解質層3を形成する。
First, as in the well-known technique, an anode lead 6 made of tantalum wire is planted, high-purity tantalum powder is pressure-molded into a desired shape, and then vacuum sintered to form an anode body 1. Next, a depleted oxide layer jl[2t- is formed on the surface of the anode body l by electrochemical means. Next, it is immersed in a manganese nitrate bath and thermally decomposed to form a solid electrolyte layer 3 of manganese dioxide on the dielectric oxide film 2.

次いでグラファイト層および銀ペースト層からなる導電
性対向電極4t−設はコンデンサ素子を完成させる(第
4図(a) )。
Next, a conductive counter electrode 4t consisting of a graphite layer and a silver paste layer is formed to complete the capacitor element (FIG. 4(a)).

次いで第4図(b)に示すように、陽極リードの先端部
6bおよび導電性対向電極4の一部4bとを無量させた
状態でコンデンサ素子全体に絶縁部材9をエポキシ樹脂
でトランスファーモールド法により設ける。
Next, as shown in FIG. 4(b), an insulating member 9 is coated with epoxy resin over the entire capacitor element by transfer molding, with the tip portion 6b of the anode lead and the portion 4b of the conductive counter electrode 4 left in a state of being free. establish.

しかる後、くるみ粉末を絶縁部材9を設けたコンデンサ
素子に吹きつけ、陽極リード6に形成さnている酸化皮
膜およびモールド成型時に発生するパリを除去するとと
もに、絶縁部材9の表面を粗化させる。
After that, walnut powder is sprayed onto the capacitor element provided with the insulating member 9 to remove the oxide film formed on the anode lead 6 and the paris generated during molding, and to roughen the surface of the insulating member 9. .

次いで、第4図(C)に示すように、陽・陰極用導電部
材12および13t−除一た部分をマスキングしたあと
、@極す−゛ドの先端部6bおよび導電性対向電極の一
部4bと電気的に接続関係を有するように絶縁部材9上
に銅を無電解メッキ手段により形成する。無電解メッキ
手段として杜、先ず前処理としてジメチルホルムアしド
クロム酸に数分間浸漬し表面を粗化するとともに清浄化
した。しかる後、無電解メッキ触媒液に浸漬し友後、シ
ュウ酸塩化す) IJウム処理を施したあと硫酸鋼、E
DT人、ホルムアルデヒドよシなる)’Hex12*液
温70℃の無電解鋼メッキ浴中に数時間浸漬して、絶縁
部材9上に陽極リードの先端部6bおよび導電性対向電
極の一部4bと電気的に接続するよう銅層で陽・陰極用
導電部材12および13t−形成した。しかる後、銅の
酸化を防止するために―・陰極用導電部材12および1
3上を半田層で被蝋した。
Next, as shown in FIG. 4(C), after masking the separated parts of the anode and cathode conductive members 12 and 13t, the tip 6b of the electrode and a part of the conductive counter electrode are masked. Copper is formed on the insulating member 9 by electroless plating so as to be electrically connected to the insulating member 4b. As an electroless plating method, first, as a pretreatment, it was immersed in dimethylformadochromic acid for several minutes to roughen the surface and clean it. After that, it is immersed in an electroless plating catalyst solution and converted to oxalate.) After IJum treatment, sulfuric acid steel, E
DT (formaldehyde, etc.)'Hex12 Conductive members 12 and 13t for anode and cathode were formed with a copper layer for electrical connection. After that, in order to prevent copper from oxidizing, conductive members 12 and 1 for cathode
3 was covered with a solder layer.

以上本発明のチップ型電解コンデンテでは、従来の構成
の′wt極端子が不必要となり、長さ、幅。
As described above, in the chip type electrolytic capacitor of the present invention, the 'wt pole terminal of the conventional configuration is unnecessary, and the length and width are reduced.

高さのすべてについて小型化できるのみならず。Not only can it be made smaller in terms of height.

従来の溶接工程を必要とせず溶接工程でのコンデンサ特
性劣化が着しく改善される。
The deterioration of capacitor characteristics during the welding process is significantly improved without requiring the conventional welding process.

さらに、X極端子の接続工程が個別処理から、バッチ処
理へ移行できるので量産化できる利点もある。
Furthermore, since the process of connecting the X-electrode terminals can be shifted from individual processing to batch processing, there is an advantage that mass production can be carried out.

なお1本発明について、実施例として銅の無電解メッキ
法およびプロズマ溶射法についてのみ記したが、銅塊外
の二、ケル、ニッケル合金、銀。
1 Regarding the present invention, only the electroless plating method and the plasma spraying method of copper are described as examples.

金等の半田付は可能な金属を用いてもよく、又蒸層法、
スパッタリング法、イオンブレーティング法プラズマ溶
射法によっても可能であることは勿論である。
For soldering such as gold, metals that can be used may be used, and vapor layer method,
Of course, sputtering, ion blasting, and plasma spraying can also be used.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は従来のチップ減電解コンデンサの
断面図、第3図は本発明実施例によるチ、プ型電解コン
デンサの断面1第4図(a)〜(C)は第3図の製造工
程を説明するための断面図である。 1・・・・・・陽極体、2・・・・・・誘電体酸化皮膜
、3・・・・・・固体電解質層、4・・・・・・導電性
対向電極、5・・・・・・導電性接着材、4b・・・・
・・導電性対向電極〇一部(露出部)、6・・・・・・
陽極リード、7・・・・・・−極外部端子6a・・・・
・・陽極リードの根元部、6b−・・・・・陽極リード
の先端部、8・・・・・・陽極外部端子、9・・・・・
・絶縁部材、8a・・・・・・陽極リードと#III極
外部端子の接続部。 10・・・・・・キャップ状陽極金属端子、11・・・
・・・キヤ、プ状隙偽金I!4噛子、12−・・・・・
陽極用導電部材。 13・・・・・・陰極用導電部材。 め 7図 第2図 5 躬、3図 (aン                      
(b)め 4図 (C)
1 and 2 are cross-sectional views of a conventional chip electrolytic reduction capacitor, and FIG. 3 is a cross-sectional view of a chip electrolytic capacitor according to an embodiment of the present invention. FIG. 3 is a cross-sectional view for explaining the manufacturing process. DESCRIPTION OF SYMBOLS 1... Anode body, 2... Dielectric oxide film, 3... Solid electrolyte layer, 4... Conductive counter electrode, 5...・・Conductive adhesive, 4b・・・・
・・Conductive counter electrode〇part (exposed part), 6・・・・・・
Anode lead, 7...-external terminal 6a...
... Root of the anode lead, 6b... Tip of the anode lead, 8... Anode external terminal, 9...
- Insulating member, 8a...Connection part between the anode lead and the #III external terminal. 10... Cap-shaped anode metal terminal, 11...
...Kiya, fake money I! 4 bites, 12-...
Conductive material for anode. 13... Conductive member for cathode. Figure 7, Figure 2, Figure 5, Figure 3 (a).
(b) Figure 4 (C)

Claims (7)

【特許請求の範囲】[Claims] (1)弁作用を有する金属粉末に弁作用を有する陽便り
−ドを植立し、所望形状に成製してなる陽極体上に、誘
電体酸化成膜、bid体電解質鳩および導電性対向電極
上順次形成してなる;ンデンサ話子において、前記コン
デンサ素子の陽極リードの先端部および前記導電性対向
電極の一部を除いて前記コンデンサ素子を絶縁部材で被
覆し、かつ前記陽極リードの先端部および導電性対向電
極の一部と前記絶縁部材上に設けらnた導電層とを接続
させたことt−特徴とするチップ型電解コンデンサ。
(1) A dielectric oxide film is formed, a bid body electrolyte layer and a conductive counter electrode are formed on the anode body, which is made by planting a positive electrode having a valve effect on a metal powder having a valve effect and forming it into a desired shape. In the capacitor element, the capacitor element is covered with an insulating material except for the tip of the anode lead of the capacitor element and a part of the conductive counter electrode, and the tip of the anode lead is sequentially formed on the electrode. A chip type electrolytic capacitor characterized in that a part of the conductive counter electrode is connected to a conductive layer provided on the insulating member.
(2)  yP作用をゼする金属粉末に弁作用を有する
陽極リードt−植立し所望形状に成減して陽極体を形成
する工程と、前記陽極体上に銹電体酸化皮膜、固体電解
質層および導電性対向電極を11次形成する工程と、前
記陽極リードの先端部および導電性対向電極の一部を除
いて電気絶縁部材で被覆する工程と、前記陽極リードの
先端部および導電性対向[極の一部と接続させる導11
1rmを前記絶縁部材上に形成する工程と金含むことを
特徴とするチップ型電解コンデンサの製造方法。
(2) A step of planting an anode lead T having a valve action on a metal powder having a yP action and reducing it to a desired shape to form an anode body, and forming a galvanic oxide film and a solid electrolyte on the anode body. 11 steps of forming a layer and a conductive counter electrode; a step of covering the anode lead tip and a part of the conductive counter electrode with an electrically insulating material; [Conductor 11 connected to part of the pole
A method for manufacturing a chip type electrolytic capacitor, comprising a step of forming 1rm on the insulating member and gold.
(3)前記絶縁部材上に設けらnた導電層の形成工程が
無電解メッキであることを特徴とする特許請求の範囲第
2項記載のチップ型電解コンデンサの製造方法。
(3) The method for manufacturing a chip-type electrolytic capacitor according to claim 2, wherein the step of forming the conductive layer provided on the insulating member is electroless plating.
(4)前記絶縁部材上に設けられた導電層の形成工程が
蒸着であることt−特徴とする特許請求の範FtI!第
2項記載のチップ型電解コンデンサの製造方法。
(4) Claims FtI characterized in that the step of forming the conductive layer provided on the insulating member is vapor deposition. 2. The method for manufacturing a chip-type electrolytic capacitor according to item 2.
(5)  前記絶縁部材上に設けられた導電l−の形成
工程がスパッタリングであることを特徴とする特許請求
の範囲第2項記載のチップ型電解コンデンサの製造方法
(5) The method for manufacturing a chip-type electrolytic capacitor according to claim 2, wherein the step of forming the conductive layer provided on the insulating member is sputtering.
(6)前記絶縁部材上に設けらnた導電層の形成工程が
イオンブレーティングであることt−特徴とする特許請
求の範囲1g2項記載のチップ型電解コンデンサの製造
方法。
(6) The method for manufacturing a chip-type electrolytic capacitor according to claim 1g2, characterized in that the step of forming the conductive layer provided on the insulating member is ion blating.
(7)前記絶縁部材上に設けらnた導電層の形成工程が
4電性樹脂の塗布により形成することを特徴とする特許
請求の範囲ag2項記載のチップ型岨解コンデンサの製
造方法。
(7) The method for manufacturing a chip-type dielectric capacitor according to claim 2, wherein the step of forming the conductive layer provided on the insulating member is performed by coating a tetraelectric resin.
JP17804081A 1981-11-06 1981-11-06 Chip type electrolytic condenser and method of producing same Pending JPS5879715A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17804081A JPS5879715A (en) 1981-11-06 1981-11-06 Chip type electrolytic condenser and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17804081A JPS5879715A (en) 1981-11-06 1981-11-06 Chip type electrolytic condenser and method of producing same

Publications (1)

Publication Number Publication Date
JPS5879715A true JPS5879715A (en) 1983-05-13

Family

ID=16041533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17804081A Pending JPS5879715A (en) 1981-11-06 1981-11-06 Chip type electrolytic condenser and method of producing same

Country Status (1)

Country Link
JP (1) JPS5879715A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216213A (en) * 1985-11-25 1987-09-22 スプラグ・エレクトリツク・カンパニ− Tantalum capacitor and method and apparatus for manufacturing the same
JPH02301115A (en) * 1989-05-15 1990-12-13 Nec Corp Chip type solid electrolytic capacitor
JPH04367212A (en) * 1991-06-14 1992-12-18 Nec Corp Chip-shaped solid electrolytic capacitor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534686B2 (en) * 1975-05-30 1980-09-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5534686B2 (en) * 1975-05-30 1980-09-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216213A (en) * 1985-11-25 1987-09-22 スプラグ・エレクトリツク・カンパニ− Tantalum capacitor and method and apparatus for manufacturing the same
JPH02301115A (en) * 1989-05-15 1990-12-13 Nec Corp Chip type solid electrolytic capacitor
JPH04367212A (en) * 1991-06-14 1992-12-18 Nec Corp Chip-shaped solid electrolytic capacitor

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