JP3208875B2 - Chip-shaped solid electrolytic capacitor and its manufacturing method - Google Patents
Chip-shaped solid electrolytic capacitor and its manufacturing methodInfo
- Publication number
- JP3208875B2 JP3208875B2 JP33635392A JP33635392A JP3208875B2 JP 3208875 B2 JP3208875 B2 JP 3208875B2 JP 33635392 A JP33635392 A JP 33635392A JP 33635392 A JP33635392 A JP 33635392A JP 3208875 B2 JP3208875 B2 JP 3208875B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- solid electrolytic
- electrolytic capacitor
- layer forming
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims description 59
- 239000007787 solid Substances 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004020 conductor Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 238000005304 joining Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000011888 foil Substances 0.000 description 11
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 2
- -1 thallium ions Chemical class 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910003438 thallium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はチップ状の固体電解コン
デンサおよびその製法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip-shaped solid electrolytic capacitor and a method for producing the same.
【０００２】[0002]
【従来の技術】電子機器の軽薄短小化に伴い、それに使
用する電子部品の１種である固体電解コンデンサにおい
ても小型化が要求されているが、一般には図３で示した
ような積層型のチップ形状によって小型化の要求に対応
している。2. Description of the Related Art As electronic devices have become lighter and thinner, there has been a demand for miniaturization of solid electrolytic capacitors which are one type of electronic components used in such devices. The chip shape meets the demand for miniaturization.
【０００３】同図は従来のチップ形状の固体電解コンデ
ンサを示す斜視図であるが、外装樹脂５の内部にある固
体電解コンデンサ素子２が複数枚方向を揃えて配置され
ており、コンデンサ素子２の陽極部３と素子の表面に形
成された導電体層形成部４の底面とを、それぞれ一対の
対向して配置されたリードフレームの陽極リード引出し
部である凸部１ａと陰極リード引出し部である凸部１ｂ
に載置して接合された状態を示しており、別に用意した
エポキシ樹脂等の外装樹脂５によって封口されている。FIG. 1 is a perspective view showing a conventional chip-shaped solid electrolytic capacitor, in which a plurality of solid electrolytic capacitor elements 2 inside an exterior resin 5 are arranged in the same direction. The anode portion 3 and the bottom surface of the conductor layer forming portion 4 formed on the surface of the element are respectively formed by a convex portion 1a which is an anode lead lead portion and a cathode lead lead portion of a pair of opposingly arranged lead frames. Convex part 1b
In a state of being mounted on and joined together, and sealed by a separately prepared exterior resin 5 such as an epoxy resin.
【０００４】[0004]
【発明が解決しようとする課題】前述したコンデンサ素
子の導電体層形成部は、アルミニウム箔等の陽極基体の
表面に半導体層および導電体層が積層されているため、
陽極部よりも厚みが厚くなっている。従ってこの厚みの
差は、このコンデンサ素子を複数枚、例えば導電体層形
成部同志を重ねた場合により顕著になり、陽極部間に隙
間が生じる。The conductor layer forming portion of the above-described capacitor element has a structure in which a semiconductor layer and a conductor layer are laminated on the surface of an anode substrate such as an aluminum foil.
It is thicker than the anode. Therefore, the difference in thickness becomes more remarkable when a plurality of the capacitor elements are stacked, for example, when the conductor layer forming portions are overlapped, and a gap is generated between the anode portions.
【０００５】このような隙間の存在を防ぐために隙間と
同程度の厚みのスペーサーを入れることが考えられる
が、スペーサーと陽極部とを充分に接続することが困難
なため外装樹脂で封止成形を行うとスペーサーと陽極部
の隙間に外装樹脂が入り込み、その結果、作製した固体
電解コンデンサの漏れ電流を上昇させるという問題点が
あった。[0005] In order to prevent the existence of such a gap, it is conceivable to insert a spacer having the same thickness as that of the gap. However, it is difficult to sufficiently connect the spacer and the anode part. When this is done, the exterior resin enters the gap between the spacer and the anode part, and as a result, there is a problem that the leakage current of the manufactured solid electrolytic capacitor is increased.
【０００６】[0006]
【課題を解決するための手段】本発明者等は前述した課
題を解決するために鋭意研究した結果、各コンデンサ素
子の陽極部の一隅に切り欠き部を設け、陽極部の間に、
切り欠き部の一部にまで延長するように金属板を嵌挿
し、切り欠き部を導電材で充填して積層、接続した固体
電解コンデンサは漏れ電流値が良好であることを見い出
し本発明を完成させるに至った。Means for Solving the Problems The present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, provided a notch at one corner of the anode of each capacitor element,
A metal plate was inserted so as to extend to a part of the notch, and the notch was filled with a conductive material, laminated, and connected. It led to.
【０００７】即ち、本発明の要旨は表面に誘電体酸化皮
膜を有する平板状の弁作用金属からなる陽極基体の一方
の端部を陽極部とし、この陽極基体の残部の前記誘電体
酸化皮膜層上に半導体層、その上に導電体層が形成され
た導電体層形成部を有する複数枚の固体電解コンデンサ
素子の前記陽極部と導電体層形成部とがそれぞれ積層さ
れてリード端子に接続され、外装樹脂で封止成形されて
いる固体電解コンデンサにおいて、前記それぞれの固体
電解コンデンサ素子の陽極部の一隅に切り欠き部が有
り、該陽極部と陽極部の間および陽極部とリード端子の
間には、切り欠き部の一部まで延長した金属板が嵌挿さ
れて、前記陽極部と金属板とは電気的に接続されてお
り、切り欠き部には導電材が充填されているチップ状固
体電解コンデンサにあり、また積層された前記陽極部の
外周部が導電ぺーストで覆われているチップ状固体電解
コンデンサである。That is, the gist of the present invention is that one end of a flat plate-shaped anode substrate having a dielectric oxide film on its surface is used as an anode portion, and the remaining portion of the anode substrate is the dielectric oxide film layer The anode portion and the conductor layer forming portion of a plurality of solid electrolytic capacitor elements having a conductor layer forming portion having a semiconductor layer formed thereon and a conductor layer formed thereon are respectively laminated and connected to lead terminals. In a solid electrolytic capacitor sealed and molded with an exterior resin, there is a cutout at one corner of the anode of each of the solid electrolytic capacitor elements, between the anode and the anode and between the anode and the lead terminal. A metal plate extending to a part of the notch portion is inserted therein, the anode portion and the metal plate are electrically connected, and the notch portion is filled with a conductive material. For solid electrolytic capacitors And a chip solid electrolytic capacitor outer periphery of the stacked the anode portion is covered with a conductive paste.
【０００８】さらに、表面に誘電体酸化皮膜層を有する
平板状の弁作用金属からなる陽極基体の一方の端部に、
一隅に切り欠き部を有する陽極部を設け、この陽極基体
の残部の前記誘電体酸化皮膜層上に半導体層、その上に
導電体層を形成して導電体層形成部を有する固体電解コ
ンデンサ素子とし、前記陽極部に切り欠き部の一部まで
延長した金属板を接合した後、これら素子を切り欠き部
が重なるように複数枚積層して前記切り欠き部に導電材
を充填し、前記陽極部の金属板と前記導電体層形成部と
にリード端子を接続して外装樹脂で封止成形するチップ
状固体電解コンデンサの製法であり、また前記積層した
固体電解コンデンサ素子の陽極部の外周部を導電ペース
トで覆った後、外装樹脂で封止するチップ状固体電解コ
ンデンサの製法にある。Further, at one end of an anode substrate made of a valve-shaped metal having a dielectric oxide film layer on its surface,
A solid electrolytic capacitor element having an anode portion having a notch in one corner, a semiconductor layer formed on the dielectric oxide film layer of the remainder of the anode substrate, and a conductor layer formed thereon to have a conductor layer forming portion; After joining a metal plate extending to a part of the notch portion to the anode portion, a plurality of these elements are stacked so that the notch portion overlaps, and the notch portion is filled with a conductive material, and the anode is filled with a conductive material. A method for producing a chip-shaped solid electrolytic capacitor in which lead terminals are connected to a metal plate of the portion and the conductor layer forming portion and sealed and molded with an exterior resin, and an outer peripheral portion of an anode portion of the laminated solid electrolytic capacitor element Is covered with a conductive paste and then sealed with an exterior resin.
【０００９】以下、本発明について詳細に説明する。本
発明において固体電解コンデンサの陽極として用いられ
る弁作用を有する陽極基体としては、例えばアルミニウ
ム、タンタル、およびこれらを基質とする合金等、弁作
用を有する金属がいずれも使用できる。そして陽極基体
の形状としては、平板状のアルミニウムの箔や板が挙げ
られる。Hereinafter, the present invention will be described in detail. As the anode substrate having a valve action used as the anode of the solid electrolytic capacitor in the present invention, any metal having a valve action such as aluminum, tantalum, and alloys using these as a substrate can be used. Examples of the shape of the anode substrate include a flat aluminum foil and plate.
【００１０】陽極基体の表面に設ける誘電体酸化皮膜層
は、弁作用金属の表面部分に設けられた弁作用金属自体
の酸化物層であってもよく、或は、弁作用金属箔の表面
上に設けられた他の誘電体酸化物の層であってもよい
が、特に弁作用金属自体の酸化物からなる層であること
が望ましい。[0010] The dielectric oxide film layer provided on the surface of the anode substrate may be an oxide layer of the valve action metal itself provided on the surface portion of the valve action metal, or may be provided on the surface of the valve action metal foil. May be a layer of another dielectric oxide, but is particularly preferably a layer made of an oxide of the valve metal itself.
【００１１】本発明では、表面に誘電体酸化皮膜層が形
成された平板状の陽極基体の端部の一区画に陽極部を設
けており、さらにこの陽極部の一隅に切り欠き部を設け
ていることが肝要である。In the present invention, the anode is provided in one section of the end of the plate-shaped anode base having the dielectric oxide film layer formed on the surface, and the notch is provided in one corner of the anode. Is important.
【００１２】切り欠き部を設けるのは、陽極基体に誘電
体酸化皮膜層を形成する前でも後でもよく、また後述す
るような半導体層や導電体層を形成する前でも後でもよ
い。The notch may be provided before or after the formation of the dielectric oxide film layer on the anode substrate, or before or after the formation of a semiconductor layer or a conductor layer as described later.
【００１３】切り欠き部の大きさは、陽極部の大きさ、
陽極基体の積層枚数によって異なるため予備実験によっ
て決められる。また切り欠き部の形状は半円形、四角形
等公知のどのような形状でも差し支えない。切り欠き部
の個数は、複数個でもよい。The size of the notch is the size of the anode,
Since it depends on the number of stacked anode substrates, it is determined by preliminary experiments. The shape of the notch may be any known shape such as a semicircle or a square. The number of notches may be plural.
【００１４】使用する金属板の材質としては、鉄、ニッ
ケルまたはこれら金属を主成分とする合金等が挙げら
れ、その厚さは、後述する半導体層および導電体層の厚
さと同程度にすることが好ましいため、予備実験によっ
て決定されるが、通常、０．０５mm〜１mmの金属箔が使
用される。金属板の大きさは、陽極部の大きさより大き
く、前記切り欠き部の一部に届く程度であり、コンデン
サ素子の導電体層形成部と接触しないように設計され
る。そして陽極部と金属板との接合は、熔接等で行われ
ている。Examples of the material of the metal plate to be used include iron, nickel and alloys containing these metals as main components, and the thickness thereof should be approximately equal to the thickness of the semiconductor layer and the conductor layer described later. Is preferably determined by preliminary experiments, but usually a metal foil of 0.05 mm to 1 mm is used. The size of the metal plate is larger than the size of the anode portion, and reaches only a part of the cutout portion, and is designed so as not to come into contact with the conductor layer forming portion of the capacitor element. The joining between the anode part and the metal plate is performed by welding or the like.
【００１５】次に、陽極部とした以外の残りの誘電体酸
化皮膜層上に半導体層を形成させているが、半導体層の
種類には特に制限は無く、従来公知の半導体層が使用で
きるが、とりわけ本願出願人の出願による二酸化鉛また
は二酸化鉛と硫酸鉛からなる半導体層（特開昭６２−２
５６４２３号公報、特開昭６３−５１６２１号公報）
が、作製した固体電解コンデンサの高周波性能が良好な
ために好ましい。Next, a semiconductor layer is formed on the remaining dielectric oxide film layer except for the anode portion, but the type of the semiconductor layer is not particularly limited, and a conventionally known semiconductor layer can be used. In particular, a semiconductor layer composed of lead dioxide or lead dioxide and lead sulfate, which was filed by the applicant of the present invention (JP-A-62-2
No. 56423, JP-A-63-51621)
However, it is preferable because the high frequency performance of the manufactured solid electrolytic capacitor is good.
【００１６】また、テトラチオテトラセンとクロラニル
の錯体を半導体層として形成させる方法（特開昭６２−
２９１２３号公報）やタリウムイオンおよび過硫酸イオ
ンを含んだ反応母液から化学的に酸化第２タリウムを半
導体層として析出させる方法（特開昭６２−３８７１５
号公報）もその一例である。Further, a method of forming a complex of tetrathiotetracene and chloranil as a semiconductor layer (Japanese Patent Application Laid-Open No. Sho 62-62)
No. 29123) and a method of chemically depositing thallium oxide as a semiconductor layer from a reaction mother liquor containing thallium ions and persulfate ions (JP-A-62-38715).
Is an example of this.
【００１７】そしてこのような半導体層上には、例えば
カーボンペーストおよび／または銀ペースト等の従来公
知の導電ペーストを積層して導電体層を形成して導電体
層形成部を構成している。また、前述した陽極部と半導
体層並びに導電体層との境界部に絶縁樹脂層により、は
ち巻き状に絶縁樹脂層を形成していてもよい。On the semiconductor layer, a conductive layer is formed by laminating a conventionally known conductive paste such as a carbon paste and / or a silver paste to form a conductive layer forming portion. In addition, the insulating resin layer may be formed in a spiral shape by the insulating resin layer at the boundary between the above-described anode portion, the semiconductor layer, and the conductor layer.
【００１８】次に、このように導電体層まで形成された
コンデンサ素子を複数枚方向を揃えて積層する方法を説
明する。図２は、積層したコンデンサ素子を導電材６で
接合した状態を示す断面図である。同図において、コン
デンサ素子２の陽極部３の切り欠き部７が一致するよう
に各コンデンサ素子を載置した後、導電材６によって切
り欠き部７を埋めるように注入し、さらに乾燥硬化する
ことによって一体化して積層したコンデンサ素子として
いる。切り欠き部７の大半を導電材６で埋めていれば、
切り欠き部７の一部に導電材６の未充填部があってもよ
い。Next, a method of laminating a plurality of capacitor elements formed up to the conductor layer in the same direction will be described. FIG. 2 is a cross-sectional view showing a state in which the laminated capacitor elements are joined by a conductive material 6. In the same figure, after placing each capacitor element so that the notch 7 of the anode part 3 of the capacitor element 2 coincides, injecting so as to fill the notch 7 with the conductive material 6, and further drying and curing. To form a laminated capacitor element. If most of the notch 7 is filled with the conductive material 6,
There may be an unfilled portion of the conductive material 6 in a part of the cutout portion 7.
【００１９】積層したコンデンサ素子は、さらに各コン
デンサ素子２同志の接続を強固にするため、各コンデン
サ素子の導電体層形成部のみを、例えば銀ペースト等の
導電材浴に浸漬し、乾燥硬化することにより一体化を計
ってもよい。前述した導電材としては、銀ペースト等の
公知の導電ペースト、クリーム半田等の溶融可能金属が
挙げられる。In the laminated capacitor element, in order to further strengthen the connection between the respective capacitor elements 2, only the conductor layer forming portion of each capacitor element is immersed in a conductive material bath such as a silver paste and dried and hardened. By doing so, integration may be measured. Examples of the conductive material include a known conductive paste such as a silver paste and a fusible metal such as cream solder.
【００２０】また図１は、上述の積層したコンデンサ素
子をリードフレームに載置してリード端子に接続した状
態を示す斜視図である。積層したコンデンサ素子２の導
電体層形成部４の底部と金属板８とを各々リードフレー
ムの凸部１ｂ，１ａに載置し、導電ペースト等により電
気的、機械的に接続されている。FIG. 1 is a perspective view showing a state where the above-mentioned laminated capacitor element is mounted on a lead frame and connected to a lead terminal. The bottom of the conductor layer forming portion 4 of the laminated capacitor element 2 and the metal plate 8 are mounted on the protrusions 1b and 1a of the lead frame, respectively, and are electrically and mechanically connected by a conductive paste or the like.
【００２１】このようにしてリードフレームに接続され
た固体電解コンデンサ素子はエポキシ樹脂等の外装樹脂
５により、トランスファー成形機等で、封止成形を行っ
た後、リードフレームの凸部をコンデンサ素子の近辺で
切断してチップ状の固体電解コンデンサとしている。The solid electrolytic capacitor element connected to the lead frame in this way is sealed with a transfer molding machine or the like using an exterior resin 5 such as an epoxy resin, and then the protrusion of the lead frame is connected to the capacitor element. It is cut in the vicinity to form a chip-shaped solid electrolytic capacitor.
【００２２】[0022]
【作用】コンデンサ素子の陽極部の一隅に切り欠き部を
設け、陽極部に切り欠き部の一部にまで延長した金属板
を載置接合し、次いで各コンデンサ素子を方向を揃えて
重ね、各コンデンサ素子の切り欠き部に導電材を充填す
ることにより接合しているので、陽極部と金属板との接
合が良好になり、陽極部間の空隙が少なくなる。A notch is provided at one corner of the anode of the capacitor element, a metal plate extended to a part of the notch is placed and joined to the anode, and then the capacitor elements are stacked in the same direction. Since the notch portion of the capacitor element is joined by filling it with a conductive material, the joining between the anode portion and the metal plate is improved, and the gap between the anode portions is reduced.
【００２３】[0023]
【実施例】以下、実施例および比較例を示して本発明を
さらに詳しく説明する。The present invention will be described below in more detail with reference to Examples and Comparative Examples.
【００２４】実施例１〜３ りん酸とりん酸アンモニウム水溶液中で化成処理して表
面に誘電体酸化皮膜層を形成した４５μF／cm2のアルミ
ニウムエッチング箔（以下、化成箔と称する。）の小片
５mm×３mmを用意した。この化成箔の端から２mm×３mm
の部分を陽極部とし、表１に示した形状と大きさの切り
欠き部を設けた。Examples 1-3 Small pieces of aluminum etching foil (hereinafter referred to as chemical conversion foil) of 45 μF / cm 2 having a dielectric oxide film layer formed on the surface by chemical conversion treatment in an aqueous solution of phosphoric acid and ammonium phosphate. 5 mm x 3 mm was prepared. 2mm x 3mm from the end of this chemical foil
Was used as an anode, and cutouts having the shapes and sizes shown in Table 1 were provided.
【００２５】一方、金属板として厚さ０．１mm、大きさ
を表１に示したニッケル箔を用意し、陽極部の切り欠き
部が無い側の先端にニッケル箔の先端を揃えて重ね、化
成箔の陽極部と金属板をスポット熔接で接続した。この
ような化成箔の陽極部を除いた残り３mm×３mmの部分を
酢酸鉛三水和物２．４モル／ｌの水溶液と過硫酸アンモ
ニウム４．０モル／ｌの水溶液の混合液に浸漬し、６０
℃で２０分放置し、二酸化鉛と硫酸鉛からなる半導体層
を形成した。On the other hand, a nickel foil having a thickness of 0.1 mm and a size shown in Table 1 was prepared as a metal plate, and the tip of the nickel foil was aligned with the tip of the anode portion having no notch, and the layer was formed. The anode part of the foil and the metal plate were connected by spot welding. The remaining 3 mm × 3 mm portion excluding the anode part of the chemical conversion foil was immersed in a mixture of an aqueous solution of lead acetate trihydrate 2.4 mol / l and an aqueous solution of ammonium persulfate 4.0 mol / l, 60
This was left at 20 ° C. for 20 minutes to form a semiconductor layer composed of lead dioxide and lead sulfate.
【００２６】このような操作を３回行った後、半導体層
上にカーボンペーストおよび銀ペーストを順に積層して
導電体層を形成し、コンデンサ素子を作製した。このよ
うなコンデンサ素子を４枚方向を揃えて重ね、コンデン
サ素子の導電体層形成部を銀ペースト浴に浸漬し乾燥硬
化することによって、導電体層形成部を一体化した。After such an operation was performed three times, a carbon paste and a silver paste were sequentially laminated on the semiconductor layer to form a conductor layer, thereby producing a capacitor element. Four such capacitor elements were stacked in the same direction, and the conductor layer forming portion of the capacitor element was immersed in a silver paste bath and dried and cured to integrate the conductor layer forming portion.
【００２７】次いで、積層コンデンサ素子の導電体層形
成部の底部と陽極部の最下部の金属板を、別に用意した
一対の幅３mmの凸部を有するリードフレームの各凸部に
載置し、陽極部は切り欠き部に銀ペーストを充填するこ
とにより、導電体層形成部には、底部に銀ペーストを付
着させることにより、電気的、機械的に接続した。そし
て、エポキシ樹脂を用いてトランスファー成形してチッ
プ状固体電解コンデンサを作製した。 実施例４〜６ 実施例１〜３で、金属板の材質を４２アロイにし、さら
に半導体層を酢酸鉛三水和物２．０モル／ｌ水溶液に化
成箔を浸漬して、別に用意した白金陰極との間で電気化
学的に形成した二酸化鉛にした以外は、実施例１〜３と
同様にしてチップ状固体電解コンデンサをそれぞれ作製
した。Next, the bottom portion of the conductor layer forming portion of the multilayer capacitor element and the lowermost metal plate of the anode portion are placed on each of the separately provided pair of protrusions of a lead frame having a protrusion having a width of 3 mm, The anode portion was electrically and mechanically connected by filling the cutout portion with silver paste and attaching the silver paste to the bottom of the conductor layer forming portion. Then, transfer molding was performed using an epoxy resin to produce a chip-shaped solid electrolytic capacitor. Examples 4 to 6 In Examples 1 to 3, the metal plate was made of 42 alloy, and the semiconductor layer was immersed in a 2.0 mol / l aqueous solution of lead acetate trihydrate to form a platinum foil. Chip-shaped solid electrolytic capacitors were produced in the same manner as in Examples 1 to 3, except that lead dioxide electrochemically formed between the cathode and the cathode was used.
【００２８】比較例１ 陽極部に切り欠き部が無い化成箔と金属板を用い、それ
ぞれ４枚の化成箔と金属板を交互に重ね合わせて陽極部
と金属板とを一度にスポット熔接した以外は実施例１〜
３と同様にしてチップ状固体電解コンデンサを作製し
た。COMPARATIVE EXAMPLE 1 A chemical conversion foil and a metal plate having no cutout in the anode portion were used, except that four chemical conversion foils and a metal plate were alternately overlapped, and the anode portion and the metal plate were spot-welded at once. Are Examples 1 to
In the same manner as in Example 3, a chip-shaped solid electrolytic capacitor was produced.
【００２９】[0029]
【表１】 [Table 1]
【００３０】以上のようにして作製した直後の固体電解
コンデンサの性能を表２に示した。なお各実施例または
比較例は全数値とも５０点の平均値である。Table 2 shows the performance of the solid electrolytic capacitor immediately after being manufactured as described above. In each example or comparative example, all numerical values are average values of 50 points.
【００３１】[0031]
【表２】 [Table 2]
【００３２】[0032]
【発明の効果】本発明のチップ状固体電解コンデンサ
は、陽極基体の陽極部間のスペーサーとして金属板を使
用し、陽極部の一隅に切り欠き部が存在しており、金属
板がこの切り欠き部の一部まで延長して嵌挿されてい
て、切り欠き部を通じて導電材で接合されているため、
作製した固体電解コンデンサは漏れ電流値が良好であ
る。The chip-shaped solid electrolytic capacitor of the present invention uses a metal plate as a spacer between the anode portions of the anode substrate, and has a notch at one corner of the anode portion. Since it is extended and inserted to a part of the part, and it is joined with a conductive material through the notch,
The manufactured solid electrolytic capacitor has a good leakage current value.
【図１】積層したコンデンサ素子をリードフレームに載
置して接続した状態を示す斜視図である。FIG. 1 is a perspective view showing a state in which laminated capacitor elements are mounted on a lead frame and connected.
【図２】積層したコンデンサ素子を導電材で接合した状
態を示す断面図（ａ）および平面図（ｂ）である。FIGS. 2A and 2B are a cross-sectional view and a plan view showing a state in which the laminated capacitor elements are joined by a conductive material.
【図３】従来の積層型チップ状固体電解コンデンサを示
す斜視図である。FIG. 3 is a perspective view showing a conventional multilayer chip solid electrolytic capacitor.
１ａ リードフレームの凸部 １ｂ リードフレームの凸部 ２ コンデンサ素子 ３ 陽極部 ４ 導電体層形成部 ５ 外装樹脂 ６ 導電材 ７ 切り欠き部 ８ 金属板 1a Lead frame convex portion 1b Lead frame convex portion 2 Capacitor element 3 Anode portion 4 Conductive layer forming portion 5 Outer resin 6 Conductive material 7 Notch portion 8 Metal plate
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01G 9/012 H01G 9/04 H01G 9/048 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01G 9/012 H01G 9/04 H01G 9/048
Claims (4)
の弁作用金属からなる陽極基体の一方の端部を陽極部と
し、この陽極基体の残部の前記誘電体酸化皮膜層上に半
導体層、その上に導電体層が形成された導電体層形成部
を有する複数枚の固体電解コンデンサ素子の前記陽極部
と導電体層形成部とがそれぞれ積層されてリード端子に
接続され、外装樹脂で封止成形されている固体電解コン
デンサにおいて、前記それぞれの固体電解コンデンサ素
子の陽極部の一隅に切り欠き部が有り、該陽極部と陽極
部との間および陽極部とリード端子との間には、切り欠
き部の一部まで延長した、前記導電体層形成部と同程度
の厚みの金属板が嵌挿されて前記陽極部と金属板とは電
気的に接続されており、切り欠き部に導電材が充填され
ていることを特徴とするチップ状固体電解コンデンサ。1. An end portion of an anode substrate made of a valve-shaped metal having a dielectric oxide film layer on the surface is used as an anode portion, and a semiconductor layer is formed on the remaining dielectric oxide film layer of the anode substrate. The anode portions and the conductor layer forming portions of a plurality of solid electrolytic capacitor elements having a conductor layer forming portion having a conductor layer formed thereon are respectively laminated and connected to lead terminals, and are provided with an exterior resin. In the sealed solid electrolytic capacitor, there is a notch at one corner of the anode part of each solid electrolytic capacitor element, between the anode part and the anode part and between the anode part and the lead terminal. , Extended to a part of the cutout portion, the same degree as the conductive layer forming portion
A chip-shaped solid electrolytic capacitor, wherein a metal plate having a thickness of 3 mm is inserted and the anode portion and the metal plate are electrically connected to each other, and a cutout portion is filled with a conductive material.
トで覆われていることを特徴とする請求項１記載のチッ
プ状固体電解コンデンサ。2. The solid electrolytic capacitor according to claim 1, wherein an outer peripheral portion of the laminated anode portion is covered with a conductive paste.
の弁作用金属からなる陽極基体の一方の端部に、一隅に
切り欠き部を有する陽極部を設け、この陽極基体の残部
の前記誘電体酸化皮膜層上に半導体層、その上に導電体
層を形成して導電体層形成部を有する固体電解コンデン
サ素子とし、前記陽極部に、切り欠き部の一部まで延長
した、前記導電体層形成部と同程度の厚みの金属板を接
合した後、これら素子を切り欠き部が重なるように複数
枚積層して前記切り欠き部に導電材を充填し、前記陽極
部の金属板と前記導電体層形成部とにリード端子を接続
して外装樹脂で封止成形することを特徴とするチップ状
固体電解コンデンサの製法。3. An anode base having a notch at one corner is provided at one end of a flat plate-shaped anode base having a dielectric oxide film layer on its surface and made of a valve action metal. semiconductor layer on the dielectric oxide film layer, a solid electrolytic capacitor element having a conductor layer forming unit to form a conductive layer thereon, said anode portion and extended to a part of the notch, the conductive After joining a metal plate having a thickness similar to that of the body layer forming portion , a plurality of these elements are stacked so that the cutout portions overlap, and the cutout portion is filled with a conductive material, and the metal plate of the anode portion and A method for manufacturing a chip-shaped solid electrolytic capacitor, characterized in that a lead terminal is connected to the conductor layer forming portion and sealed with an exterior resin.
部の外周部を導電ペーストで覆った後、外装樹脂で封止
成形することを特徴とする請求項３記載のチップ状固体
電解コンデンサの製法。4. The method for producing a chip-shaped solid electrolytic capacitor according to claim 3, wherein an outer peripheral portion of an anode portion of the stacked solid electrolytic capacitor elements is covered with a conductive paste and then sealed with an exterior resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33635392A JP3208875B2 (en) | 1992-12-16 | 1992-12-16 | Chip-shaped solid electrolytic capacitor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33635392A JP3208875B2 (en) | 1992-12-16 | 1992-12-16 | Chip-shaped solid electrolytic capacitor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06188157A JPH06188157A (en) | 1994-07-08 |
| JP3208875B2 true JP3208875B2 (en) | 2001-09-17 |
Family
ID=18298254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33635392A Expired - Lifetime JP3208875B2 (en) | 1992-12-16 | 1992-12-16 | Chip-shaped solid electrolytic capacitor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3208875B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563693B2 (en) | 2001-07-02 | 2003-05-13 | Matsushita Electric Industrial Co., Ltd. | Solid electrolytic capacitor |
-
1992
- 1992-12-16 JP JP33635392A patent/JP3208875B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06188157A (en) | 1994-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7149077B2 (en) | Solid electrolytic capacitor with face-down terminals, manufacturing method of the same, and lead frame for use therein | |
| JP3557564B2 (en) | Multilayer solid electrolytic capacitors | |
| JP3441088B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3463692B2 (en) | Manufacturing method of chip-shaped solid electrolytic capacitor | |
| JP3208875B2 (en) | Chip-shaped solid electrolytic capacitor and its manufacturing method | |
| JPH05217811A (en) | Chip-shaped solid electrolytic capacitor and its manufacture | |
| JPH05175085A (en) | Chip-shaped solid electrolytic capacitor | |
| JP3424269B2 (en) | Chip-shaped solid electrolytic capacitors | |
| JP3123232B2 (en) | Multilayer solid electrolytic capacitors | |
| JP3932191B2 (en) | Solid electrolytic capacitor | |
| JP3441095B2 (en) | Solid electrolytic capacitors | |
| JP3433478B2 (en) | Solid electrolytic capacitors | |
| JP3185405B2 (en) | Solid electrolytic capacitors | |
| JP2867514B2 (en) | Chip type solid electrolytic capacitor | |
| JP3433490B2 (en) | Chip-shaped solid electrolytic capacitors | |
| JP3505763B2 (en) | Chip-shaped solid electrolytic capacitor | |
| JP3433479B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3546451B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3976055B2 (en) | Solid electrolytic capacitor | |
| JP2549702B2 (en) | Solid electrolytic capacitor | |
| JP2902681B2 (en) | Manufacturing method of multilayer solid electrolytic capacitor | |
| JP3894316B2 (en) | Manufacturing method of chip-shaped solid electrolytic capacitor | |
| JP2004349725A (en) | Chip-like solid electrolytic capacitor | |
| JPH0590097A (en) | Lead frame for capacitor and solid electrolytic capacitor using it | |
| JPH04354318A (en) | Production of chip-shaped solid-state electrolytic capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100713 Year of fee payment: 9 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100713 Year of fee payment: 9 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100713 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110713 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20110713 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20120713 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20130713 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130713 Year of fee payment: 12 |