JPS5831553A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To accelerate the operation of a semiconductor device inexpensively by forming an SiO2 film partly opened with a window on the surface of a single crystal Si substrate, forming a single crystal Si film on the surface and forming an SiO2 film at least partly thermally oxidized in contact with a primary SiO2 film. CONSTITUTION:In order to form an Si film 5, an Si film in a window is formed by high temperature CVD in a single crystal Si film, and an Si film on an SiO2 is formed in a polycrystalline Si film. The film 5 is thermally oxidized until the second dielectric isolation region 8 is contacted with a primary SiO2 film 4. Thereafter, the film 5 is instantaneously melted by laser annealing, infrared ray or Xe lamp annealing from the surface to be converted into single crystal, thereby forming a single crystal Si film, an N type well 9 or a P type well 10 is formed by ion implantation in the windows of the Si film and the Si substrate, a source and drain region is formed by the ordinary MOS FET manufacture, a hole is then opened, and aluminum wire is deposited.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to semiconductor mounting and its manufacturing method, and more particularly to a dielectric isolation method for thin film semiconductor devices.

Conventionally, the 81 semiconductor device had a drawback in that high-speed performance could not be obtained because the semiconductor mounting was formed on a single crystal 81 substrate and the elements were not completely isolated by a dielectric material.

In order to eliminate the above-mentioned drawbacks, a semiconductor device using 80B (silicon-on-sapphire) tC, which is a semiconductor am with complete t-electric isolation between elements, has been manufactured, but it has the disadvantage of high cost of the sapphire substrate. Yes, but not commonly used.

However, recently, a technique has been developed for growing a single crystal 5 illt on a partially windowed 81 substrate and also on a film using the late pull epitaxial technique.

The present invention provides a partially windowed fL7' on such an 81 substrate.
e810. The purpose of this invention is to provide a low-cost, high-speed semiconductor device #1 that eliminates the disadvantages of the prior art by applying the 81 film formation technology on a film, and provides a dielectric isolation method 1 for that purpose. It is something.

The basic configuration that achieves the object of the present invention is that FliOlM with a partially opened window is formed on the surface of the single crystal 81 substrate.
The window opening is fi7csiO, and the substrate surface Vc containing the film is formed with a single crystal 81 film.
At least a portion of the single crystal B111@ on the film was formed into an 810m film by oxidation, and the base date was 10. Being in contact with the membrane t41! Make it your life.

The present invention will be specifically described below with reference to Examples.

Figure m1 shows the manufacturing process of a non-rc-MO8IC according to an embodiment of the present invention.

On a single crystal 81 wafer 1, a thin thermally generated S10° film 2 and an 81 mNa film 3 made of flVDK were formed, and the window openings were made by photo(P, R,), N, and TILL.
left by etching, 81. N, using the membrane as an oxidation mask, the first dielectric valve 4810. Four films are relatively polished, and the thin 5102 film 1, Si, N, film 2, etc. are removed to expose the Shimoike single crystal 81 substrate in the window portion. CVD next
An S1 film 5t is formed by the method. In this case, cedar 1. However, in high width (900°C to 1200°C) CVD, the 81 film on the window part becomes monocrystalline S1, and the 81 film on 5j01 becomes polycrystalline B1, and at relatively low temperature (500°C to 800°C) ℃
) CVI: Dege 1 part and 810 degrees above become polycrystalline B1 smell, and Izu 11's raw/t't, law is also good. In this case, the former generation method was used. Next, thin isio,%1i(
S, CVDKj6S1iN+'NZ k cedar IJ7 and photo-etched s1115 base dio1813
Completely remove 513N and film Z of the part to be dielectrically separated above 4, and use 81 as n5isN4 film 7ff oxidation mask.
The film 5 is thermally oxidized to form a second dielectric shaded region 8.
Oxide is formed until it touches n, [4. After that, it is formed into a single crystal 61 film by laser annealing, infrared annealing, or σXs lamp annealing, etc., which instantaneously melts the j1sim5 surface in front of the edge and turns it into a single crystal, resulting in a single crystal 61 film.↓ Sil and #31 board window @tN well 9 or iP
Form well 10, and then t&o ordinary MOS FET
Elli gate oxide hood 11, gate polycrystalline 811 for the surface method
2. Form source drain/1IJI area 15 etc. and CV
810 by DK. [After cutting out the 14i shape and drilling the contact hole, apply the M vapor layer #15.

The diffusion regions of the MOS, FICTU, source/dray/etc. manufactured in this way are on the dielectric film and on the dielectric valve S.
-, etc., it becomes almost completely separated, the electric capacitance of the wiring becomes small, the speed increases, and there is no need to use an expensive +1 board such as sapphire for the board, and the normal 81
Ueno® is sufficient and has the effect of lowering costs.

[Brief explanation of drawings]

Figures (a-g) show jJ4 according to the present invention! @ dielectric separation a
-Vos' Process 0 is a cross-sectional diagram for each process showing the manufacturing method. 1...81; III plate, 2.6... slo, membrane, 5
．． 7...81, Nth film, 4...1st layer heat 5t
otll! x 5...day IM18...2nd a electric body separation 810. ,? ...N well, 10...P well, 11...gate 810x Pa512--gate polycrystalline i11.13-...diffusion S i m, 14...C
VD-8i○, membrane, +5...M-0 or more Applicant: Tanbozukosha Co., Ltd. Agent Patent Attorney Denjou No. 1N Figure 1

Claims (1)

[Claims] (1) Single crystal 81 The surface of the substrate has a partially opened window 8
A single crystal film 81 is formed on the surface of the substrate including the window-opened 8102 film.
k810. A semiconductor device in which at least a part of the single crystal B1 film on the film is made into an 8101 film by thermal oxidation and is in contact with an underlying 8103 film. 12) Single crystal 81 substrate surface Kl-J partially opened 7t810. The membrane is formed and the window is opened 810
A single-crystal S1 film is formed on the surface of the substrate containing the film, and at least a part of the single-crystal S1 film on the window-opened B101 film is thermally oxidized to form an 810 film and an underlying 810 film. A method for manufacturing a semiconductor device that focuses on the formation of a semiconductor device in contact with a film.