JPS58209105A - Substrate material - Google Patents
Substrate materialInfo
- Publication number
- JPS58209105A JPS58209105A JP57092798A JP9279882A JPS58209105A JP S58209105 A JPS58209105 A JP S58209105A JP 57092798 A JP57092798 A JP 57092798A JP 9279882 A JP9279882 A JP 9279882A JP S58209105 A JPS58209105 A JP S58209105A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- substrate
- magnetic film
- substrate material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Laminated Bodies (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、金属磁性膜を蒸着するための非磁性基板材料
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a non-magnetic substrate material for depositing metal magnetic films.
従来、例えば薄膜磁気ヘッド、集積回路素子等を製造す
るに際しては、チタン酸バリウム、チタン酸カルシウム
、アルミナ、亜鉛フェライト、ガラス等を非磁性基板材
料として用い、該基板材料[に金属磁性膜を形成したち
のが用いられていた。Conventionally, when manufacturing thin film magnetic heads, integrated circuit elements, etc., for example, barium titanate, calcium titanate, alumina, zinc ferrite, glass, etc. are used as nonmagnetic substrate materials, and a metal magnetic film is formed on the substrate material. Shitachino was used.
寸なわら、これらの材料を基板材料として鏡百仕しけ加
工を施したあと、1−リフロールエチレン。However, after using these materials as substrate materials and performing mirror processing, 1-rerolled ethylene was produced.
アセ(・ン等の有機溶媒中で洗浄し、この基板−1−に
U ”>’ (4”−6法、スバノシリング)人、イA
シル−ノイング)ム等の公知の物lψに入る法技術を用
いC数μ・〜数1μmの膜1!、lにF−e−N!系の
金属磁v1膜を形成(7、イの後、磁気狛f1改訊のた
め500・〜700℃て°貞空中加熱による熱処理を実
施しくいる。Washed in an organic solvent such as acetic acid, etc., and applied U ``>'(4''-6 method, Subano Schilling) to this substrate-1-.
A film 1 of C several μm to several 1 μm is obtained using the known method technology such as Sil-Ning). , F-e-N! Formation of a metal magnetic v1 film (7. After A, heat treatment by heating in a clean air at 500-700°C is carried out to reconstitute the magnetic film f1.
しかしながら、1記従来の基数月利の多くは、イの熱膨
張係数が金属1f’l膜の熱膨張係数αと人さく異な−
Jでいるため、蒸るした♂属磁性膜が剥離しや1いとい
う欠点を有していた。また、例えば熱膨張係数が金属磁
性膜の熱に1服係数と合ったガラスの場合には、蒸椙膜
の剥離の問題点はないが、1PIA磁気ヘツドを構成し
た場合に(よ、ガラスの硬さが低いために磁気アーIと
の摺動により摩耗するという欠点があ・)だ。However, in many of the conventional base monthly interest rates described in 1., the coefficient of thermal expansion of a is very different from the coefficient of thermal expansion α of the metal 1f'l film.
Since it is made of J, it has the disadvantage that the steamed male magnetic film is difficult to peel off. For example, in the case of glass whose coefficient of thermal expansion matches that of the metal magnetic film, there is no problem of peeling of the evaporation film, but when a 1PIA magnetic head is constructed ( The disadvantage is that it wears out due to sliding with the magnetic arm due to its low hardness.
このため、FeNi系金属mfi股の熱膨;瓜係数α(
120×10−′77′℃)に近い熱膨張係数を有し、
しかも硬さは磁気アープに含まれる磁性粉の砂さくl(
v = 500・〜700KO/′1OI2)なみの1
1f竹を石りる非磁性基板材料の出現が望まれていた3
゜本発明は上記要望に応えるべくイ1されたしのであり
、「c−Jli系金属磁性膜を物理蒸義法に」、り形成
づるに最適な非磁性基板材料を提供することをlJ的ど
1」る。For this reason, the thermal expansion of the FeNi metal mfi;
It has a coefficient of thermal expansion close to 120×10-'77'℃),
Moreover, the hardness is determined by the magnetic powder contained in the magnetic arp (
v = 500・~700KO/'1OI2) 1
It was hoped that a non-magnetic substrate material that could be made from 1F bamboo would emerge.3
゜The present invention was developed in response to the above-mentioned needs, and aims to provide a non-magnetic substrate material most suitable for forming c-Jli metal magnetic films by physical vaporization. Do1'ru.
1記目的を達成りるために本発明は、ZO2ft、=I
n27NtOa(/ζだし0≦X≦ 1)で表わされ
亡塩型#4迄を有する酸化物を金属磁性脱蒸着用非磁性
基扱材料として用いたことを特徴とするものである。In order to achieve the first object, the present invention provides ZO2ft,=I
The present invention is characterized in that an oxide represented by n27NtOa (/ζdashi0≦X≦1) having up to #4 salt type is used as a non-magnetic base material for metal magnetic deevaporation.
I記組成の酸化物は、フェライト磁気ヘッドの製造技術
において、フエライ[・どの接合に関連りる構造材料ど
じで、先に本件出願人が提案したことがあるものである
(特開昭52−126797号公報参照)。The oxide having the composition I is used as a structural material related to ferrite magnetic heads in the manufacturing technology of ferrite magnetic heads, and has previously been proposed by the applicant of the present invention (Japanese Patent Application Laid-Open No. 1983-1991). (See Publication No. 126797).
しかしながら、先に提案したときは磁気ヘッドの構造材
料としての特性に着目したものであり、当該月利が金属
磁性膜蒸着用基板材ねとしC適しくいるか否かは必ずし
も明確ではなかった。However, when the proposal was made earlier, the focus was on the characteristics of the structural material of the magnetic head, and it was not necessarily clear whether the monthly yield was suitable for the substrate material C on which the metal magnetic film was deposited.
本発明者等は、前記従来技術の欠点を解消する新規な4
A判を実現リベく種々検討した結果、1−記組成の非磁
性材料が特にFe−Ni系金属磁性膜蒸義用基板材料ど
じで最適なものであることを児出し本発明を完成したち
の(ある、。The present inventors have developed a novel 4
As a result of various studies to realize A-size, we found that the non-magnetic material with the composition described in 1-1 is particularly suitable as a substrate material for Fe-Ni metal magnetic film deposition, and completed the present invention. (There is,.
本発明にa3いC10,モ×′−1としl−の番J、こ
の組成範囲Cは熱膨張係数αか100・〜 1iox
io 。In the present invention, a3 is C10, mo x'-1 and l- is number J, and this composition range C has a thermal expansion coefficient α or 100.~1iox
io.
℃稈庶の1!1性となり、[e−N!系↑属磁P[膜の
α□どは):r同等となるためである。It becomes 1!1 character of ℃ culm, [e-N! This is because the system ↑ belonging magnetic P [α□ of the film]: r is equivalent.
また本発明にJ3いて、j記組成を1−成分としくl〜
l 、Cr、3i 、Sn、13aiの添加物を含イj
させた場合には、J、り高密電化出来る利点があるので
、aが[ONi系♀属1af’!膜のαと;まば同等の
ものであれば、同様に本発明の効果を1;Iることが−
((!る。In addition, according to the present invention, in J3, the composition j is made into a 1-component.
Contains additives such as l, Cr, 3i, Sn, and 13ai.
In this case, there is an advantage that J can be highly electrified, so a becomes [ONi system ♀ genus 1af'! If it is roughly equivalent to α of the membrane, the effect of the present invention can be similarly reduced to 1.
((!ru.
以下、本発明を実施例【こ早づさ°LT述Jる。Hereinafter, the present invention will be described as an example.
実施例]
組成式Z rl(M n2−えNi03で表わされる酸
化物非磁性材料のうら、X O,0,4,0,8J
>、J、び1.0の各組成のものについて、6索絵利Z
eO,MnC0およびNiOを秤岨し、所望する酸化物
をそれぞれ500g製迄し製造、混百、粉砕は水または
アルコール、アセトン等の有機溶媒中ボールミルで10
・−20h処理した。また、X = 0.4の組成のも
の+;−Al2O,を粉砕時に4小ω%添加したものも
同様に製造処理した。Examples] Compositional formula Zrl (back of oxide nonmagnetic material represented by Mn2-ENi03, XO,0,4,0,8J
>, J, Bi1.0, 6 Sakeri Z
Weigh eO, MnCO, and NiO, and prepare up to 500 g of each desired oxide. Production, mixing, and pulverization are carried out using a ball mill in water or an organic solvent such as alcohol or acetone for 10 minutes.
- Treated for -20 hours. In addition, a material having a composition of X = 0.4 +;-Al2O, to which 4 small ω% was added during pulverization, was manufactured in the same manner.
軟焼は700・〜、1200℃で実施し、金型成形後、
窒索万ス中1150−1300℃の温度範囲で焼結しI
w 6得られた4)J $’lについUX線解析し、N
aC1禍造であることを確認した。次に、これらの材料
より片面を鏡面仕上げした10x 20x 2tなる形
状の基板を加−[し、これらの鏡面仕上げ面上にスパッ
タリング法にてFe−jNi系金属磁性膜(パーマ11
イ膜)を約5μm厚みに形成した。こうして得られたも
のを、真空中600℃10分間保持の炉冷条fl U熱
処理を施した。ぞの結果を第1表に示す。Soft firing was carried out at 700-1200℃, and after molding,
Sintered in a temperature range of 1150-1300℃ in a nitrogen bath.
W 6 obtained 4) J $'l was analyzed by UX rays,
It was confirmed that it was aC1 Magazou. Next, a substrate with a shape of 10 x 20 x 2t with one side mirror-finished is processed from these materials, and a Fe-jNi metal magnetic film (permanent 11
A film) was formed to a thickness of about 5 μm. The thus obtained product was subjected to furnace cooling fl U heat treatment in vacuum at 600° C. for 10 minutes. The results are shown in Table 1.
また、比較のために、従来材としてブタン酸バリウム糸
の基板も上記と同様にして作製処理した。For comparison, a substrate made of barium butanoate thread as a conventional material was also fabricated and processed in the same manner as above.
第1人
O:はがれ無し、×:はがltあり
に : A 12 03 4 小 −)
% 添 111目A第1表より明らかな如く、従来1
,1−i、 jiじ(いたa属磁性膜の熱処理時の剥離
は、本発明の月利では皆無である。また、副成分としぞ
Δ1)Oヨ を添加しものもαが107X10/”Cて
あり、問題なくイ(効であることが明らかであり、捗め
(高い密度を4+するという利点と相倹−〕(イj−用
と1見板材γ;1(あること明白である。1st person O: No peeling, ×: Peeling: A 12 03 4 small -)
% As is clear from Table 1 of Appendix 111, conventional 1
, 1-i, jiji (There is no peeling of the A-group magnetic film during heat treatment in the monthly yield of the present invention.Also, when Δ1)Oyo is added as a subcomponent, α is 107×10/” C, there is no problem in A (it is clear that it is effective, and it is compatible with the advantage of increasing the high density to 4+) .
以1.詳述した如く、本発明昇磁F1M扱材利を用いる
ことにより、金属磁性薄膜形成後に、磁気特性の改善の
ための熱処理を施ずことが望ましい舎属1片性股に対し
7(、膜の剥離を心配することなくイr急の熱処理が可
能どなり、磁気特性の優れた膜をイJ!Jる電了部品索
fを4−産ケることが出来る利j1″、ξかある。この
ため本発明の]゛業的1+Tb顧は極めて人4幻るもの
がある。Below 1. As described in detail, by using the magnetized F1M treatment material of the present invention, it is possible to obtain 7 (, This has the advantage of being able to perform rapid heat treatment without worrying about peeling of the film, and thus producing a film with excellent magnetic properties. For this reason, the commercial 1+Tb solution of the present invention is extremely impressive.
手続補正書(方式)
%式%
昭和57年持、;′醪(l第92798 シ;づC
明の名(ろ。Procedural amendment (method) % formula%
Ming's name (Ro)
基板材料
++ti +Fをする者
rllう ・sog、 Iし″4余属株式会社代
〕・ 古 河 !Ilr
典 ノそ代 川! 人
1、〜 四 重工;C都千代)11区九0内容1
’ll1番28手続補正書(自発)
、1□’fff15て、12.、、6゜・IG r’l
の表示
昭 和67年11・許願第 92798 シJ袖)
1をする名
・1… −II)関f4 持 □′「
出 駒1 ノ(ji・ii 東京都丁−代11
1区丸の内2「目1番25;−ン、 Iづ ・50g
+ ll 、“Ig を属株式会社代)7h河野 典
夫
代 理 人
居 −・!1 東市部丁・代111区丸の内21
’l11番2ぢ11・“/、p属株式会社内電話 東京
2B&−4642補11のχ・を象
明細書の「発明の詳細な説明」の硼。Substrate material ++ti +F person who performs ・sog, I"4 other affiliated companies
]・ Koga! Ilr
Nori no Soyo River! Person 1, ~ 4 Heavy Industries; C Chiyo) 11 Wards 90 Contents 1
'll1 No. 28 Procedural Amendment (voluntary), 1□'fff15, 12. ,,6゜・IG r'l
(No. 11, 1988, Application No. 92798, J Sleeve)
Name to do 1・1... -II) Seki f4 Mochi □'
Dekoma 1 no (ji・ii Tokyo cho-dai 11
1 Ward Marunouchi 2 ``Eye 1 No. 25;-n, Izu ・50g
+ ll, "Ig belongs to the corporation) 7h Norio Kono representative person residence -・! 1 Higashi City Bucho・dai 111 ward Marunouchi 21
'l11 No. 2ぢ11・''/, P Group Corporation Internal Telephone Tokyo 2B&-4642 Supplement 11 χ・ is the ``Detailed Description of the Invention'' section of the specification.
補正の内容
L #IA細書の「発明の詳細な説明」の媚の記411
2を下記の通り訂正する。Contents of amendment L #Detailed description of the invention in the IA specification 411
Correct 2 as follows.
記
(1)明#書第41第16行のf−zeo Jをr Z
nOJ K訂正する。Note (1) f-zeo J in Mei #41, line 16, r Z
nOJK Correct.
以 上that's all
Claims (1)
x≦1)r表わされ右塩型構造を有することを特徴とす
る金属磁性膜蒸着用非磁性基板材料。 2、上記金属磁性膜がFe−N!系高透磁率磁性膜であ
ることを特徴とする特許請求の範囲第1項記載の金属磁
性膜蒸着用非磁性基板材料。[Claims] 1, 2% M n2-z N! 03 (However, 0≦
A non-magnetic substrate material for depositing a metal magnetic film, characterized by having a right-handed salt structure represented by x≦1)r. 2. The metal magnetic film is Fe-N! 2. The nonmagnetic substrate material for depositing a metal magnetic film according to claim 1, wherein the nonmagnetic substrate material is a high permeability magnetic film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57092798A JPS58209105A (en) | 1982-05-31 | 1982-05-31 | Substrate material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57092798A JPS58209105A (en) | 1982-05-31 | 1982-05-31 | Substrate material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58209105A true JPS58209105A (en) | 1983-12-06 |
Family
ID=14064433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57092798A Pending JPS58209105A (en) | 1982-05-31 | 1982-05-31 | Substrate material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58209105A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119869A2 (en) * | 1983-03-22 | 1984-09-26 | Hitachi Metals, Ltd. | Non-magnetic substrate material |
-
1982
- 1982-05-31 JP JP57092798A patent/JPS58209105A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119869A2 (en) * | 1983-03-22 | 1984-09-26 | Hitachi Metals, Ltd. | Non-magnetic substrate material |
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