JPS58199860A - Film forming method - Google Patents

Abstract

PURPOSE:To form a synthetic film having good quality on the surface of a substrate by sputtering by generating plasma on a flat target plate disposed with materials of dissimilar kinds and moving the plasma position magnetically. CONSTITUTION:A flat target plate 21 constituted of materials of dissimilar kinds, for example, a target 21A consisting of a material A and a target 21B consisting of a material B is prepared. Magnetic lines 25 of force are generated by magnetic poles 23, 24 disposed to generate plasma 30a across the two materials A, B on the plate 21 by using a planar magnetron sputtering elactrode. The position of the generated plasma 30a is moved magnetically to form a thin alloy film consisting of the materials A, B, for example, a thin alloy film of (Mo+ Si) from the eroded part 28a of the plate 21 on the substrate 10 for forming film thereon.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a synthetic film, for example, an eight-plate alloy film, on a substrate to be film-formed by sputtering.

In sputtering technology, a low-pressure atmospheric gas is ionized (plasma-like) by causing a glow discharge, and the plasma-like ions are accelerated by a voltage applied between the positive and negative electrodes to form a flat plate of target material placed on the negative electrode. be caused to collide with

The constituent atoms or particles of the target material bombarded by the collided ions are deposited on a substrate provided near the anode to form a thin film of the target material. The Grainer magnetron type Subanotary/Gaming device using a "gate" has a deposition rate comparable to that of a conventional resistance heating type vacuum evaporation device.
In recent years, it has come to be widely used as a thin film forming apparatus for thin film integrated circuits and semiconductor devices in the production process.

FIG. 1 is a conceptual diagram illustrating an apparatus for depositing a mixture of a plurality of different materials on a substrate to be film-formed using the sputter electrode structure according to the prior art, and a film-forming method thereof. In order to simplify the drawings and explanation, a case will be described in which two substances A and B are deposited as film forming materials.

That is, the two sputtering sources and 2B are spaced apart from each other by a predetermined distance. These two sputtering sources and 2B have cylindrical magnetic poles 4A and 4B, cathodes 7A and 7B, and anodes 6A and 16i arranged on the back surfaces of the Tanitargund material flat plates 1A and 1B, respectively.
3, and a high voltage/power source VA, V that applies a high ItEE between these cathodes 7A, 713 and anodes 6A, 6B.
It is composed of B. Therefore, this magnetic pole 4A4B
One magnetic field distribution is generated between the surfaces of the target flat plate 11B (D space), and plasma ions are confined in this area at a high concentration.The plasma ions are further transmitted to the anodes 6A, 6B and the target flat plate 111. A high voltage brazing source VA,
The target flat plate IA generated by the high voltage applied by VB is accelerated by a field almost perpendicular to the surface of 1t3, and collides with the surface of the tarp 7) flat plate 1B, resulting in the target flat plate 1 , 1B are successively ejected from the surface. That is, FIG. 1 shows the CCo-5 putterin.
), and does not illustrate the evacuation means, sputtering gas introduction means, etc. necessary for the sputtering apparatus. Further, for the same reason, detailed structures such as the vacuum seal of the cylindrical ivy electrode were not illustrated. In addition, 12 is a sword 0iv1 heater. In the figure, 2A and 2B are brainamaguitron type sputtering electrodes for sputtering a material A% and a material F, respectively. They are placed at intervals.

Therefore, in order to uniformly form a composite film on the substrate 20 on which the film is to be formed on the non-gradient substrates 11A and 11B from both sputtering sources 2B, the substrate 10 must be fixed.
In addition, the planetary jigs 11A and 11B provided above the two sputter sources 2B must rotate around their axis.

Furthermore, the composition of the composite film deposited on the substrate is determined by the sputtering source 2.
Turn on the sputtering power supplies VA and VB to A and 2B.
This can be changed by controlling the ratio of the ivy power. However, as described above, according to the conventional method, the substrate 20 to be film-formed is held in the planetary jig 11.
The work to install A and 11B is l! Since it is cumbersome and difficult to automate, it is necessary to rely on manual labor, and it is also necessary to move the substrate to be deposited, the snow ivy source, and the synthetic film many times, and it is difficult to introduce movement into the vacuum equipment. There is a drawback that a high quality synthetic film cannot be formed due to the generation of new dust due to the movement of the mechanical system within the vacuum chamber in which the film is formed.

In addition, in the above-mentioned conventional method, a large number of target substrates 10 are mounted on the planetary jigs 11A, 1113, and the target substrates 10 are usually exposed to 150 to 50 mL of sputtering from the sputtering sources 2A, 2B.
Because the distance is about 0 am, the sputtered particles are scattered over a wide solid angle from the two sputtering sources, 2B, and the deposition rate of each film is small. However, a large amount of residual gas that could not be exhausted by the vacuum evacuation means was incorporated into the membrane, making it impossible to obtain the desired high-quality synthetic membrane, which was a major bottleneck in the production process.

SUMMARY OF THE INVENTION An object of the present invention is to provide a film forming method that eliminates the drawbacks of the above-mentioned conventional techniques and allows a high quality synthetic film to be formed on the surface of a sample substrate by sputtering.

In order to achieve the above object, the present invention prepares a flat target plate on which different types of materials are disposed, generates plasma on the target flat plate using a planar magnetron sputtering electrode, and uses the generated plasma. This method is characterized by forming a synthetic film with a predetermined composition ratio on the substrate to be evaluated by magnetically moving the position. In other words, the target of the spa/recipe purchasing body 2) The flat plate part 2
species (e.g. refractory metal Avio, l'aWO%,) l
, Cr, Nb, VlZr, 'l'c%Ru, R
h, Hf.

A synthetic film (e.g. Mo+Si, 'I'a+Si, Zr+8i, Cr+8i) is provided by sputtering. , vVo +Si
, Pt+Si, Pd+di, Rh+Si, Ir+
Si, polyimide + polytetrafluoroethylene carbon) was formed.

The present invention will be specifically described below based on embodiments shown in the drawings.

FIG. 2 is a conceptual cross-sectional view showing a Brener magnetron type sputtering film forming apparatus according to the present invention. multiple materials 21a
, 21b are arranged on the target material flat plate (hereinafter referred to as target flat plate) 21. A ring-shaped magnetic pole 25 is magnetically coupled to the yoke 22 on the back surface of the target material flat plate (hereinafter referred to as target flat plate) 21, and the ring-shaped magnetic pole 2
A cylindrical fly pole 24 is arranged at the center of the magnetic field 5 to form a magnetic circuit. These magnetic poles 25 and 24 create a distribution of magnetic force edges in the space on the surface side of the target flat plate 21, in other words, the torus ('f'orus) is cut in half by a plane perpendicular to the height direction, and the half-cut surface is the target. A semicircular annular magnetic field distribution parallel to the surface of the flat plate 21, commonly known as a tunnel-shaped magnetic field distribution 25, is generated. This tunnel-like magnetic field distribution 25 confines the annular plasma-like ions 50 therein at a high degree. These plasma-like ions are further generated in the target flat plate 21 due to the high voltage applied between the anode 26 and the cathode 27 installed on the back surface of the target flat plate 21. The atoms or particles are accelerated by a field (not shown) almost perpendicular to the surface and impact the surface of the target plate 21, and as a result, the atoms or particles are successively ejected from the surface of the target flat plate 21, and the eroded area 28 is formed.

As can be inferred from the explanation in F below, the degree of erosion of the sputtering pillar increases with the passage of time, and this erosion usually occurs when the target flat plate having the configuration shown in FIG. In the body, the progress is limited to a specific area of the target plate 21.

The erosion region occurs corresponding to a point or region where the magnetic field lines become parallel to the Targera plate.

Although the explanation is delayed, in the figure, the insulating plate 51 denoted by 29 is an inlet/outlet tube for a medium (for example, water) for cooling the target flat plate 21. 32 has a Q IJ song to seal. 5
5 is an insulating bushing that magnetically insulates the anode 26 and the cathode 27.

That is, the sputtered quadrupole structure according to the present invention will be explained. Targera consisting of substance A) 2+A.

The magnetic poles 25 and 24 are provided so that the output line 25 is generated so that the plasma 50a is generated across the target flat plate 210 and the target 21B made of the substance B. For this purpose, a synthetic thin film made of substances A and B, such as an alloy thin film, is formed on the substrate 10 from the erosion portion 28a of the target flat plate 21. I-hi,
Although Fig. 2 shows a Brehner magnetron D (1' type) sputtering film forming apparatus, a co/benzenial DC type sputtering film forming apparatus without a magnetron can also be used to form a synthetic thin film (e.g. In addition, in the Convenient TiG L)C sputter deposition apparatus, as shown in FIG. 21c is easily formed on the substrate 10 and a synthetic thin film consisting of 6 squares, and it is also easy to form 1 or 4 films consisting of 6 squares of wJ.

FIG. 5 is a schematic side view showing an example of the body of Supanotai Koshiku, which is related to the main brother Akira V. The main components of the sputtering electrode include a target flat plate 21 composed of a circular target flat plate 21a and annular target flat plates 21b and 21c; this target flat plate 21 is fixed by suitable brazing means; A backing plate 55 made of copper that acts as a backing plate 55 , a substrate 10 to be film-formed which is placed stationary in parallel with the target flat plate 21 , and a hollow space 11 between the target substrate 1 o to be film-formed and the target flat plate 21 . : Magnetic pole 56.6 between which generates appropriate strength as a planar magnetron sputtering electrode.
7.58, the inner excitation coil 59, which is an excitation coil for exciting these magnetic poles 56.5738, the outer excitation coil 4o, and these coils 59.40 and magnetic poles 66.5.
7.58, the yoke 41 constituted as a single flux generation source, the wiring terminals 42 for the inner and outer excitation coils, the outer excitation coil wiring terminals 45, and the sputtering electrodes are insulated in the vacuum chamber 44. 9, an insulating member 45 for attaching the vacuum / - ring 46, and a wiring drawer for the electrode body 56 that is electrically connected to the backing plate 55 for applying an electric field to the target flat plate 21. terminal 3
7, and a grounded anode 58 that prevents unnecessary discharge from occurring outside the front surface of the target flat plate 21 and serves as an anode for the sputtering electrode.

Target flat plate 2jri As mentioned before, from the disk-shaped first member 21a, the annular second target member 21b surrounding 21a, and the annular fifth tanigut member 21c further surrounding 21b. It is configured. In this example, the first target member 21af is 8i, the second target member 21b is annular Cr, and the fifth target member 21c is annular Sl. These five target members are arranged concentrically.

In the embodiment shown in FIG. 5, the target flat plate 21 is circular, but this is because the substrate to be film-formed used in this embodiment is circular, and when a rectangular substrate is used, a rectangular target flat plate is used. When used, it may be appropriate to provide a rectangular target plate. That is, the circular electrode part of the electrode structure described in this embodiment is one example, and the shape of the electrode part, such as a rectangle, does not depart from the scope of the present invention.

Further, a flow path (not shown) for passing a refrigerant such as water is formed on the back side of the backing plate 65, and a pipe 51 for supplying and discharging the medium from the outside via a magnetic field generating yoke 41 is connected to this flow path. The target flat plate 21 is configured to be cooled.

Figure g6 shows the schematic configuration of the excitation power source for this electrode structure. As a main component of the cough excitation power supply unit, two current supply circuits are incorporated in order to control the inner electromagnetic coil 59 and the outer electromagnetic coil 40 completely separately. The excitation power supply section, the inside and outside 61
゛#tm The current applied to the stone coil 69.40 can be set completely arbitrarily, that is, to a constant current that does not change over time, or to a current waveform such as a rectangular waveform, a triangular waveform, or an alternating current waveform with a constant period. Microblossom +j to be able to do it
51 and memory 52 to provide information regarding a predetermined current waveform from the computer, keyboard 56, or suitable external storage device #50 (e.g., magnetic tape, magnetic disk), and convert the output of the microgross setter 51 into a digital-to-analog signal. The signal converter 54a15<b (D-A converter) is connected to the current amplifier 55a, p5b,
It is amplified to a predetermined intensity sufficient to excite the outer axenite coil 59,40.

The excitation section 4aItff in FIG. 6 is a power source with constant current characteristics since it handles the inner and outer electromagnetic coils 59.40 as control objects, and the output current detection section 56a,
56b il'i: Detects the output current, that is, the current value of each electromagnet, and converts this into 1)/A conversion @54a, 54b
The high-voltage power supply, that is, the sputter power supply, for supplying the discharge power to carry out sputtering has means for feeding back information to the current amplifiers 55a and 55b in order to compare it with a predetermined current value given by the current amplifier and perform correction. As is well known from the past, the output direct pressure of about 0 to 800V and the 0 to 15
A device with an output current of about A was used. Furthermore, as is well known, in order to control the power input to the glow discharge, this pressure power source has constant current output characteristics.

As mentioned above, the eroded region where sputtering occurs on the target flat plate is located almost directly below the location where the plasma ring is generated. Furthermore, at sputtering pressures of 1 to 101 ntOrr used in ordinary planar magnetrons, the generation of plasma rings occurs within 9 spaces on the first principal surface of the target flat plate.
The magnetic field vector at a distance of ~20 drops is Targera 1
The light is focused in a region parallel to the first main surface of the flat plate.

Therefore, in order to know the occurrence position of the eroded region on the target flat plate, it is effective to know the magnetic flux distribution in the hollow space on the first main surface side of the target flat plate.

Therefore, before conducting an experiment to determine the characteristics such as the film thickness distribution of the film formed by the six sputtered pole structure according to this embodiment, the magnetic flux in the hollow space on the first main surface of the target flat plate 21 is measured. did. A Gauss meter was used to measure the magnetic flux distribution.

Figures i7 and 48 are used to simulate the magnetic flux distribution on the first main surface of the target flat plate 21 of the sputtering electrode structure in this example. Almost the same size as the example.

This is an example of a yoke material manufactured and measured. The difference between the embodiment shown in Fig. 5 and this pseudo-manufactured yoke is that
In the figure, the groove in which the outer electromagnetic coil 5940 is embedded is shallow.

The vertical axis in FIGS. 7 and 8 represents the magnetic pole tip 56.67.5.
8), and the horizontal axis is the distance (-) in the outward radial direction from the central axis of the sputter electrode part of the sputter electrode structure shown in FIG. 5, that is, the central axis of the # pole tip 56. . In FIG. 7, the magnetomotive force of the inner g&1I11 magnet coil 69 and the outer electromagnetic coil 40 is set to be 40:1, respectively. In FIG. 8, the magnetomotive force of the inner TA magnet coil 9 and the outer magnet coil 40 is set to be L5:1. In FIGS. 7 and 8, an inner coil 39 and an outer coil 40 are shown.
The directions of the current flowing through the two were reversed.

As mentioned above, the magnetic field vector is applied to the target flat plate 12.
Since a plasma ring is generated in a region parallel to the first principal surface of , a plasma ring is generated in a region indicated by 48.49 in FIGS. 7 and 8, respectively.

Therefore, as is clear from FIGS. 7 and 8, the location where the plasma ring is generated can be moved by changing the magnetomotive force that energizes the inner and outer magnet coils 49,50.

In the example shown in FIGS. 7 and 8, the magnetomotive force of the inner electromagnetic coil 59 is kept constant, and the magnetomotive force of the outer magnet coil 40 is changed from the magnetomotive force of the inner electromagnetic coil 59. However, conversely, even if the magnetomotive force applied to the outer electromagnetic coil 40 is constant and the magnetomotive force applied to the inner electromagnet coil 59 is changed, the magnetic field vector changes to the target flat plate as in FIGS. 7 and 8. 12 can be moved.

Before starting the description of this embodiment, the basic film thickness distribution characteristics of the film formed on the substrate 10 to be formed by the electrode structure shown in FIG. 5 and the drive power supply system shown in FIG. 6 will be described. In this case, the explanation will begin with the case where the target flat plate 21 does not have a triple annular structure, as described above, but is simply made of one material.

Figure 's9 shows a circular mound-like shape formed on the target plate.

A deposited film on a deposition target substrate 10 placed parallel to the first principal surface of the target flat plate at a distance of 85 degrees from the first principal surface of the target flat plate 21 with respect to the diameter of the erosion area 28. This is an example of how the thickness distribution characteristics change in terms of tix, and explains the first basic technical idea of the book @ Ming. The vertical axis indicates the film thickness at the center of the substrate to be film-formed.
The film thickness is shown in %, and the horizontal axis shows the distance (dark) in the outward radial direction from the center of the substrate on which the film is to be formed.

As is clear from FIG. 9, when the diameter of the erosion region 28a in the form of a cone is large, the surface of the substrate 1001
There are four pieces of debris in the film thickness distribution at about 11 points, so to speak, the film thickness distribution has a bimodal shape. On the contrary, D
Below -125'■, this shoulder in the temporal characteristics of the film thickness distribution disappears, and a so-called Yuzaki film thickness distribution characteristic with a peak at the center on the substrate to be formed is obtained.

The above discussion was about the diameter of the annular eroded region 28a, but as mentioned earlier, this eroded region occurs almost directly under the plasma ring, so the diameter of the inner annular eroded region 28a is determined by the diameter of the tt plasma ring. You can think of it as the diameter of the ring. Therefore, by controlling the magnetic field distribution characteristics shown in FIGS. 7 and 8, the diameter of the plasma ring can be changed,
As shown in FIG. 9, it can be expected that various film thickness distribution characteristics can be obtained arbitrarily.

For example, the curve 61 shown in FIG.
m The current of the magnet coil 59 and the current of the outer electromagnet coil 40 are passed with opposite polarity to each other, and the magnetomotive force of the electromagnet is obtained when the ratio of the magnetomotive force of the outer electromagnet coil 40 and the inner electromagnet coil 50 is 1:40. This is a conceptual diagram of the expected film thickness distribution characteristics, and the song #! shown in Figure 10. 62
For example, the inner electromagnetic coil 59 and the outer electromagnetic coil 40
FIG. 3 is a conceptual diagram of the film thickness distribution characteristics obtained when the diameter of the plasma ring is reduced by setting the ratio of magnetomotive force to 1.5:1.

If the magnetomotive force of the inner and outer electromagnets is changed during the film formation process on one film-forming target substrate, and the operation to give the film thickness distribution as shown in 61 and 62 in Fig. 10 is performed appropriately, the result will be as follows. On the substrate to be film-formed, the composite film thickness distribution obtained by adding curve 61 and curve 1562 is a uniform film thickness over a wide range on the substrate to be film-formed, as shown by curve 65 shown in FIG. can be obtained.

11, 12, 16, and 14 show the basic characteristics of this embodiment, that is, the amount of film deposited on the substrate 10 to be deposited when the target flat plate is made of one kind of material. This shows the film distribution.

11 to 14 show the target flat plate 21
This is the actual deposition amount distribution when the distance between the first main surface of the substrate 10 and the substrate 10 to be deposited is 76 cm, and the target material is AI-2-Si (purity 99.9999&,).
Ar (pure tL99,99
9%) was obtained under conditions of 5.4 mTorr.

The excitation conditions for the excitation coils 59 and 40 are that the outer excitation coil current is -0, and the inner excitation coil current is applied so that a magnetic flux density of about 200 Gauss is obtained at 15 points on the first main surface of the target flat plate 21. Thereafter, a predetermined current was applied to the outer excitation coil with a polarity opposite to that of the inner excitation coil according to the experimental conditions.

FIG. 11 shows the distribution of the amount of film formed when a current was applied to the outer excitation coil so that the diameter of the plasma ring was approximately 94 mm. The radius of the plasma ring was determined by determining the erosion area 28a after the film forming experiment using a surface roughness meter.

Figure 5g12 shows the film deposition amount distribution characteristic similarly obtained when the plasma ring diameter is 1501. Figure 15 shows the film formation amount distribution characteristic similarly obtained when the plasma ring diameter is 122 mm. .

As can be seen from Figures 11 to 1S, when the target substrate distance is 7 mm, it can be seen that when the plasma ring diameter is 122 mm, a flat film can be formed over the widest range.

Figure 14 shows the time when the diameter of the gutz ring is 94111 for 8 seconds, then the time when the diameter of the plasma ring is 150 times is set for 11 seconds, and this cycle is repeated 5 times to form a film of approximately 1 am. This is a film thickness distribution characteristic. 15th when the plasma ring diameter is 122 knits
It has film formation distribution characteristics almost similar to those shown in the figure. In other words, it can be said that a film deposition amount distribution characteristic similar to that of a plasma ring of 122 m can be obtained in a simulated manner by synthesizing the film deposition distribution characteristics obtained for plasma rings with diameters of 94 mm and 150 mm. .

Here, the case of the quintuple stacked target shown in FIG. 5 will be explained. Figure 15 shows a quintuple stacked target of the same period and a plasma ring with a diameter of 94 m.

This is a schematic diagram of their positional relationship when the distance is 150m. As shown in the figure, the plasma ring 50a%50a actually has a width, and it is considered that erosion regions 28a and 28M occur.

Next, the most important effects of the present invention will be described.

sx broken metal get flat plate 21M with dimensions shown in Fig. 15
Created with o21 b, 8i21a', 21C',
The results of actual film formation are shown in FIG. The conditions for the plasma ring in Figure 16 are the same as in Figure 14, with the time when the diameter of the plasma ring is 94 cm for a jp and the time when the diameter of the plasma ring is 1501 for 11 seconds, and this cycle is repeated 5 times. .

The vertical axis in Figure 16 represents the amount of 8i at the center of the substrate to be deposited.
0- is closed, and Mo is expressed as an atomic percentage with respect to 8i. This composition distribution is the energy dispersion mX
It was investigated using a line analyzer. The composition of Mo:8i-1+2 was maintained within ±5% over about 140% of the substrate.

Next, let us show another remarkable effect of the present invention.

Figure 17 shows a plasma ring diameter of 80mm and 1645m.
These are the compositional distribution characteristics of Mo and 81 when the film is formed. At this time, first the plasma ring diameter is 80
The time when the plasma ring is 164 cm is 4 seconds, and the time when the plasma ring diameter is 164 cm is 6.5 seconds, and this cycle is repeated 4 seconds.
The process was repeated several times to form a film on the substrate 10 to be formed. As a result, a composition of 8i:Mo-10o:9.6 (atomic percentage) was achieved over 15♂■ on the substrate to be film-formed. The point that deserves careful attention here is that by controlling the diameter of the guts and rings, the composition distribution can be kept constant over a sufficiently wide range, while keeping the composition distribution constant over a sufficiently wide range.
It depends on whether it is freely defined. In other words, in this example, the composition can be controlled by determining the current waveform applied to the outer excitation coil, and this is a completely new and extremely effective method that has never been considered with conventional sputter electrodes. It can be said that this is a degree of freedom.

FIG. 18 shows an example of the current waveform applied to the outer excitation coil 40 when the film deposition amount distribution shown in FIGS. 16 and 17 is obtained. In the figure, 'r is one period of change in the diameter of the plasma ring, Tm is 19 seconds in Figure 16 and 10 seconds in Figure 17.
．． It is 5 seconds. T is the time when the plasma ring diameter is large.
o, if Ti is the time during which the plasma ring diameter is small, then 'rasTo+Ti, and for FIG. 16, TiwB'rO=11 seconds, and for FIG. 17, Ti.

4 seconds, Iro Coro, 5 seconds.

In FIG. 18, the current in the outer excitation coil 40 has a rectangular waveform, but of course, even if the current is a triangular waveform or a sinusoidal waveform, if the amplitude, phase, etc. are taken into account, the current in FIGS. The following film formation distribution characteristics can be obtained.

FIG. 19 shows waveforms when a step-wave current is passed through the outer excitation coil 40 to form a film. This In'<Ii)
Takes the value of , and takes the value of To's Kanko 0.

As Tm +'I'rn m Tm, during this time the plasma ring assumes a medium-sized diameter larger than the plasma ring diameter given by 11 and smaller than the plasma ring diameter given by Io. r,,: -T'm Even if there is no such thing, there is no membership fee for which the current value is lm-1m.

Film formation with a stepped waveform as shown in Fig. 19 was performed at Ti = 4s.
ec%Tm (aTm+'rm) = 2 sec%
To=6.5sec.

The test was carried out under the conditions of Im = Im and Io < 1m < Ii.

If this condition is Tm=OSec, h and Io in FIG. 19 were determined so that they were the same as the film forming conditions in FIG. 17. Irn was adjusted to a value such that the plasma ring was exactly on the second MO target member 21b, 2Ib shown in FIG. 5 or 16. It is shown in Figure 20. The film deposition amount distribution characteristic in Figure 20 is the same as the curve 84 of the characteristic in Figure 17, with only the atomic percentage of MO increased. As shown in Figure 2, it is shown that the composition can be controlled by making the plasma ring take an intermediate value that is neither the maximum value nor the minimum value of the diameter during one cycle during film formation. The composition control method was derived from the knowledge that even if the plasma ring diameter that allows the widest and flattest film shown in Figure 11 to be introduced into a certain plasma ring control cycle, the film thickness distribution will not be significantly disturbed. It is something that was given.

If we develop this idea further, even if we combine the plasma ring diameters before and after this medium plasma ring diameter, we can obtain a plasma that gives the widest and flattest distribution of film deposition amount, as described in conjunction with Figure 14. Since it is possible to obtain a film formation amount distribution similar to that of the ring diameter, it is not necessary to have a stepped waveform as shown in Fig. 19, but a continuous waveform such as a triangular wave or a sine wave. This compositional control can be performed even if

The composition control method has been described above regarding the current waveform of the outer excitation coil 40, but conversely, it is possible to perform similar control on the current of the inner excitation coil 59 while keeping the outer excitation coil current constant. also mentioned. Furthermore, even when controlling both the inner and outer excitation currents, this does not deviate from the technical idea regarding composition control described above.

By the way, if a composite material is made of substance A and substance B with a predetermined composition as the target flat plate 21, a synthetic film can be formed on the substrate 10 with the substrate 1o stationary and facing each other in this way. High melting point metal (Mo, 'I'a
%VVO, Si, Cr %Nb, VZr, Tc,
几u%R+h%) (f, Ir, Os, kLe) and other metals (e.g. Mo+8i, Ta+Si,
Zr+8i% Cr+Si%vvo+8i% Pt
+Si, Pd+Si.

Rh+8i, Ir+8i), organic materials and synthetic materials such as gold (for example, polyimide + polytetrafluoride nyletine + carbon) cannot be obtained. However, target plate 2
By arranging the substance A 21a and the substance B 21b as shown in FIG. 21, FIG. 22, FIG. 23, or FIG. For example, a synthetic film having a predetermined composition is formed on the substrate 10.

In particular, a synthetic film (alloy film) having an arbitrary composition can be created by magnetically moving the position where glow discharge is caused and controlling the stopping time using a sputtering device equipped with a double magnetron electrode as shown in Figure 5. ) can be formed. For example, as 21a shown in FIG. 21 or FIG. 22, as 5i121b, Mo, Ta, Zr, Cr%
Wo%Rt%Pt.

It is clear that it can be formed using Pd%Ph, Ir, or the like.

The effects based on the embodiments described above will be described below. A 120×90 mm alumina ceramic glazed substrate was used as the target film-forming substrate 10. On this substrate 10, a Cr-Si alloy thin film 21000λ was formed using a Brehner magnetron DC type sputtering device as shown in FIG. . Further, the size of the target flat plate used was 10 tnch.

This substrate is subjected to one step of photolithography, and then the 25th
As shown in FIG. 26, the resistor section 70 and the electrode 2
One part 71 was formed. The broken line 71 in FIG. 25 indicates the resistor 70.
The common electrode side of the board is represented by a circle, and the blobbing electrode pads of the individual resistors are formed at both ends 72 of the other substrate. Ten resistors 70 were formed at intervals of 20 m as one unit as shown in FIG. 26, so that 120 resistors were formed per substrate.

The resistance value per substrate was measured and the variation in color was calculated. As a result, as shown in FIG. 27, the result obtained by the conventional method shown in the dXI diagram is indicated by 75, and the result obtained by the present invention is indicated by 74. Comparing these results, it can be seen that both increase as the film forming temperature increases (decreases in A). It can be seen that although the variation increases, the method according to the present invention has less variation at the same film forming temperature. This variation also means that when using a resistor as a heating resistor, unless the required applied power is increased from the standard value, it will not be possible to print uniformly on thermal recording paper.
Therefore, this becomes a factor that shortens the life of the resistor. 32
8 and 29 confirm the above-mentioned lifespan, and the lifespan is expressed by the number of applied pulses. FIG. 28 shows the conventional method shown in FIG. 1, and FIG. 29 shows the method according to the present invention. In addition, the required applied power is 0.68W/piece in the case of Fig. 28, and 0.66W in the case of 1 @ Fig. 29.
/1＠Derari, the part marked as rupture C represents the life span. These phenomena are considered to be due to the fact that the substrate is not heated uniformly in the conventional method. As described above, according to the present invention, the life of the heating resistor is significantly improved.

As explained above, according to the present invention, a composite film of multiple types of materials can be formed with a predetermined composition ratio while the grainer magnetron sputtering electrode and the substrate to be film-formed are statically opposed to each other. , it is possible to obtain a film with a good quality that could not be obtained in the past, resulting in a faster effect.

125-(Df
+ 420vX4A for board] i case 1oooA/min.

The film deposition rate was obtained. This value is the same as that of the conventional technology.

This is about 10 times the value obtained by sputtering, for example, with the apparatus shown in FIG. In the measurement by IOA, an oxygen peak is detected, but when comparing the Mo81g film formed using the conventional device and the sputtering electrode according to the present invention under the conditions shown in Figure 16, the peak height is The temperature decreased to about /. This indicates that the film formation rate was greatly reduced due to the entrapment of the residual impurity gas mentioned above. That is, the reason why such favorable process conditions can be achieved is that the sputtering electrode and film forming method according to the present invention enable sputtering with a single electrode.

According to the present invention, since sputtering can be performed with the substrate 10 to be film-formed stationary, the heater 64 is brought into contact with the substrate 10 to be film-formed as shown in FIGS. 2 to 5.
The substrate 10 can be easily heated to 500° C. or higher, and parts that do not need to be heated, such as the vacuum chamber and 1i1Al11 parts, can be prevented from being heated. This has the effect of preventing gas release, preventing an increase in the partial pressure of residual gases other than Ar gas in the vacuum chamber during film formation, improving the film formation rate, and obtaining the desired smooth film quality.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram showing a conventional sputtering apparatus, and FIG. 2 is a schematic configuration sectional view showing a planar magnetron sputtering electrode for sputtering, which is an embodiment of the film forming method according to the present invention. , FIG. 5 is a sectional view showing another embodiment different from FIG. 2, FIG. 4 is a sectional view showing another embodiment still different, FIG. A schematic cross-sectional view showing the grainer magnetron scattering electrode for sputtering, Figure 6 shows the power supply part used for the electrode shown in Figure 5, and Figure 7 shows the grainer for sputtering shown in Figure 5. Figure 8 is a diagram showing the magnetic field distribution of the magnetron, Figure 8 is a diagram showing the same magnetic field distribution as Figure 7, Figure 9 is a diagram explaining the correlation between the plasma ring diameter and the film-forming amount distribution characteristics, and Figure 10 is the same as in the book. Cos related to the invention,
A conceptual diagram illustrating the synthesis of film thickness distribution using a grainer magnetron sputter electrode for sputtering, Figure #111 is a diagram showing the basic film formation characteristics of a grainer magnetron sputter wax electrode according to the present invention, Figure 12 Figure, $
Figures 15 and 14 also show the uniformity of one-base film formation, similar to Figure 11! Figure s15 is a schematic diagram showing the positional relationship between the target flat plate and the plasma ring diameter according to the present invention, Figure llN16,
and FIG. 17 are diagrams showing examples of composition distribution characteristics of molybdenum silicide alloy film formation according to the present invention, FIGS. 18 and 19 are diagrams showing a method of controlling excitation current, and FIG. Figures 21 and 22 show the composition distribution characteristics of the molybdenum critide film 9 obtained by the control method shown in Figure 19.
25 and 24 are diagrams showing a target flat plate on which different types of substances are arranged, FIG. 25 is a diagram showing a schematic structure of a thermal head formed by the method of the present invention, and FIG. 26 is a partially enlarged view of Figure 25, #I2
Figure 7 is a diagram showing the relationship between the reciprocal of the film forming temperature and the variation in resistance value within the substrate in the present invention and the conventional method, Figure 28 is a diagram showing the life characteristics of the conventional method, and Figure 29 is FIG. 3 is a diagram showing the life characteristics according to the method of the present invention. 21...Target flat plate 21a, 21M...Target 21b consisting of a material person
, 21b - Target 2IC, 21 consisting of proboscis fiB
C... Target made of substance A, B or C 25.24... Magnetic pole 56.57.58... Magnetic pole 39... Inner excitation coil 40... Outer excitation coil 4 Toyoke 44... Vacuum chamber 55 ...Para Kink Great Agent Patent Attorney Usui 1) Part Self-Trial 11 Fu Middle 21 Mu ■ 5; 1l) 31 Button 5 Sai I II 抛 Off 1 Button Sakae? In the middle of the island tc4; outward facing Kan λ 匈 53I off 1 small use vermilion 1zt igure # role middle l (lit night tree L11 cloud [-1] se13!y ■ extremely middle l (6 Island Rice and Toru 1 Kutsu [--j Sai 1 + Mouth 1 Ri (Eye O 161 Rabbit 't' / '71 Seagull 1" 1 and 1q ↑7 Alp 4 Ne & φBe 1゛i-no I Capacity [Rego 轡] Medium λ11 jaws 2-2 mouths (A, (B l year old 131
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91 town” (FI) - 91 Naririshi 2-60 Procedural amendment (method), □, 1.579, 29゜ Name of the invention by the Commissioner of the Japan Patent Office (BJ, Film forming method arresting city) l...n□・” - Patent applicant: Chiyo, Tokyo [11-ku Marunouchi-chome) No. 15 C3 I4. -2・″El standing production
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Claims (1)

[Claims] t. A flat target plate on which different types of materials are arranged is prepared, plasma is generated on the target flat plate using a planar magnetron sputtering electrode, and the position of the generated plasma is magnetically determined. 1. A method for forming a film, comprising: moving a synthetic film at a predetermined composition ratio on a substrate to be film-formed. 2. The film forming method according to claim 1, wherein the material is made of a metal material and an alloy film is formed as a synthetic film. 3. Prepare a flat target plate in which different types of materials are arranged in a ring shape, generate a ring-shaped plasma on the target flat plate using a planar magnetron sputtering electrode, and measure the position of the generated ring-shaped plasma by magnetically controlling the position of the generated ring-shaped plasma. 1. A film forming method characterized by forming a synthetic film with a predetermined composition ratio on a substrate to be film-formed by moving the film. 4. The film forming method according to claim 3, wherein the material is made of a metal material to form a synthetic film to form an alloy film. 5. An electric field generating means for preparing a target flat plate in which different types of materials are arranged in a ring shape, and generating a magnetic field distribution on the target flat plate between the cathode electrode and the anode mc pole;
A magnetic field generating means that has at least two magnetic flux generating means each including at least six magnetically coupled magnetic pole bodies and at least one of which is constituted by an electromagnetic coil, and generates a predetermined magnetic field distribution on a target flat plate. Generate an annular plasma on the target flat plate using a Grainer magnetron scattering electrode, and magnetically move the position of the generated annular plasma by controlling the excitation current of the electromagnetic coil. A method for forming a film, comprising: forming a synthetic film at a predetermined composition ratio on a substrate to be film-formed. & The scope of the patent claim lIc5, characterized in that the above material is formed of a metal material, and an alloy film is formed as a synthetic film.
Film forming method described in section. 7. The above metal materials are S! and other metal materials,
7. The film forming method according to claim 6, wherein an 81 alloy film is formed as the alloy film.