JPS5812372A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5812372A JPS5812372A JP11139381A JP11139381A JPS5812372A JP S5812372 A JPS5812372 A JP S5812372A JP 11139381 A JP11139381 A JP 11139381A JP 11139381 A JP11139381 A JP 11139381A JP S5812372 A JPS5812372 A JP S5812372A
- Authority
- JP
- Japan
- Prior art keywords
- barrier diode
- semiconductor device
- diode
- schottky barrier
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052697 platinum Inorganic materials 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 abstract description 3
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- -1 arsenic ions Chemical class 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 230000002747 voluntary effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 235000007516 Chrysanthemum Nutrition 0.000 description 1
- 244000189548 Chrysanthemum x morifolium Species 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はシｌツ）キーパリヤダイオードを有する半導体
装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device having a keeper diode.
一般にシ謄ツ）キーパリヤダイオードの順方向特性はシ
磨ットキーパリャダイオードを形成する金属およびシ璽
ットキーバリャダイオードの面積により変化する。白金
シリサイドのシｗｙトキーバリャダイオードの順方向特
性はガードリングが無い場合、面積が１０００μｉで電
流が１００μ人のときの電圧Ｖ、は０．４５Ｖ程度であ
る。この電圧をほぼ６０ｍＶ大きくあるいは小さくする
ためには、面積を１桁も小さくあるいは大きくする必要
がある。ここで２面積を小さくしてＶｙを大きくする場
合には、直列抵抗が増加することになる。一方、面積を
太き（してｖｌＰを小さくする場合には容量が増加して
しまう。この為、実用可能なシ■ットキーパリャダイオ
ードの順方向特性はある範囲に限定されてしまうことに
なる。In general, the forward characteristics of a key barrier diode vary depending on the metal forming the key barrier diode and the area of the key barrier diode. As for the forward characteristic of a platinum silicide shield barrier diode without a guard ring, the voltage V is about 0.45V when the area is 1000μ and the current is 100μ. In order to increase or decrease this voltage by approximately 60 mV, it is necessary to decrease or increase the area by an order of magnitude. Here, if Vy is increased by decreasing the area, the series resistance will increase. On the other hand, if the area is increased (and vlP is decreased), the capacitance increases.For this reason, the forward characteristics of a practical Schottky parryer diode are limited to a certain range. Become.
本発明の目的は、この上記のような従来の欠点のないシ
璽ツ）キーパリヤダイオードを有する半導体装置を提供
することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device having a conventional keeper diode that does not have the above-mentioned drawbacks of the prior art.
本発明の特徴は、−導電型の半導体基板にシ１ットキー
パリャダイオードを有する半導体装置の製造方法におい
て、このシ璽ットキーパリャダイオードとなる部分に不
純物をイオン注入する工程が含まれる半導体装置の製造
方法にある。すなわち、同一面積で順方向特性の興なる
シ＝ａｙトキーバリャダイオードを必要に応じて形成し
た有効な半導体装置の製造方法を提供するものである。The features of the present invention are as follows: - A method for manufacturing a semiconductor device having a shutter diode in a conductive type semiconductor substrate, which includes the step of ion-implanting impurities into a portion that will become the shutter diode. In a method of manufacturing a semiconductor device. That is, the present invention provides an effective method for manufacturing a semiconductor device in which a barrier diode having the same area and excellent forward characteristics is formed as necessary.
以下本発明の実施例について、図面を用いて詳細ＫＩ！
明する。Below is a detailed explanation of the embodiments of the present invention using drawings!
I will clarify.
従来の一導電塵の半導体基板にシ璽ットキーパ９ヤダイ
オードを有する半導体装置において、シ曹ット牛−パリ
ヤダイオードとなる部分＃ｉ％第１１１に示すようにシ
９：ｌン等のｎＩ［エピタキシャル層（１）Ｋｔｌ！白
金等のシ璽ツ）キーパリヤを形成する金属層（菊を被着
して、その上に配線用の金属（４）を持た曽ている。こ
のままではｖｌな変えることは困難であった。In a conventional semiconductor device having a shield keeper diode on a semiconductor substrate made of conductive dust, a part #i% that becomes a shield diode, as shown in #111, has nI[ Epitaxial layer (1) Ktl! A metal layer (made of platinum, etc.) forming the keeper layer (chrysanthemum is deposited on it, and a metal (4) for wiring is placed on top of it. It was difficult to change the material as it was.
しかし１本発明により容易にｖｌを変えることができる
ようになった。第２１ａにおいて、シ９：ＩンＯ＊ＩＩ
エビタ牛シャル層α）にシリコンｊｌ化１［（２）と写
真蝕刻用の感光剤（５）な被着する。この後、写真蝕側
法によりシ嘗ット中−パリヤダイオードとなる部分を開
孔する。その後第３図に示すように。However, the present invention has made it possible to easily change vl. In No. 21a, C9:IO*II
A silicone gel (2) and a photosensitive agent (5) for photolithography are applied to the Evita shell layer α). Thereafter, a hole is made in the hole in the portion that will become the pariah diode using the photo-etching method. Then as shown in FIG.
砒素をショットキーバリヤダイオードとなる部分にイオ
ン注入する。そして白金をスパッターしてシンターを適
当な条件で行なう。しかる後に白金を除去すれば白金シ
リサイドのみが残る。この上に配線用金属のアル識を蒸
着し、不用な部分をエツチングにより除去すれば第４Ｗ
Ｊに示すシロットキーパリャダイオー「ができあがる。Arsenic ions are implanted into the portion that will become the Schottky barrier diode. Then, platinum is sputtered and sintered under appropriate conditions. If platinum is then removed, only platinum silicide remains. On top of this, a layer of wiring metal is deposited and the unnecessary portions are removed by etching.
The sirotkipalyadaioh shown in J is completed.
このショットキーバリヤダイオードのｖｌはイオン注入
量により変化する。すなわち、第５図に示すようにイオ
ン注入量が増えるとＶνは低くなる。このようにイオン
注入量を変えることによってショットキーバリヤダイオ
ードのｖｌを７ントロールする事ができる。The vl of this Schottky barrier diode changes depending on the amount of ion implantation. That is, as shown in FIG. 5, as the amount of ion implantation increases, Vv decreases. By changing the amount of ion implantation in this way, it is possible to control vl of the Schottky barrier diode.
また、本発明は第６図の様にショットキーバリヤダイオ
ードのｖｌ値を数種類同一チップ内でコン）ロールする
ことにより従来のシ冒ットキーパリャダイオードを使用
したＩＣの特性を改良するだけではなく、今後のシ冒ッ
トキーパリャダイオードを使りたＬＳＩ等に新たな可能
性を開くものである。Furthermore, the present invention does not merely improve the characteristics of an IC using a conventional Schottky barrier diode by controlling several types of Schottky barrier diode vl values within the same chip as shown in FIG. This opens up new possibilities for future LSIs and the like that use the storage space diode.
１１１ｗ１は従来Ｏ半導体装置におけるシ曹ットキ−パ
リャダイオーＦの部分の断面図である。第２図、第３！
Ｉ！Ｊおよび第４図は本発明の半導体装置の製造方法の
説明図である。＊５ｒｉａはイオン注入量が増えるとシ
冒ットキーパリャダイオードのｖＷＪが低くなることを
示す図である。＊＊＊は本発明の一実施例で同〒チップ
内ＫＶｙＯ異なるシ曹ツ）キーバリヤダイオードを含ん
でいる。
なお図において、１−・・半導体基板、２−・絶縁層、
３−・・シ舊ットキーパリャを形成する金属層、４−・
・配線用金属層、５−・感光剤、６・・・イオン注入さ
れた領域、７・−絶縁体、８−・絶縁領域、９・・・オ
ーム接触用拡散領域、である。
第１図
第２図
嬶３図111w1 is a cross-sectional view of a portion of a semiconductor Otky-Palya diode F in a conventional O semiconductor device. Figure 2, Figure 3!
I! J and FIG. 4 are explanatory diagrams of the method for manufacturing a semiconductor device of the present invention. *5ria is a diagram showing that as the amount of ion implantation increases, the vWJ of the Schottky parryer diode decreases. *** is an embodiment of the present invention and includes a key barrier diode (KVyO different type) within the same chip. In the figure, 1--semiconductor substrate, 2--insulating layer,
3-...Metal layer forming the seat keypad, 4-...
- Metal layer for wiring, 5 - Photosensitive agent, 6 - Ion-implanted region, 7 - Insulator, 8 - Insulating region, 9 - Diffusion region for ohmic contact. Figure 1 Figure 2 Figure 3
Claims (1)
を有する半導体装置の製造方法において、該シ１ットキ
ーバリャダイオードとなる部分に不純物をイオン注入す
る工程が含まれることを特徴とする半導体装置の製造方
法。- A method for manufacturing a semiconductor device having a shield key barrier diode in a conductive semiconductor substrate, the semiconductor device comprising the step of ion-implanting impurities into a portion that will become the shield barrier diode. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11139381A JPS5812372A (en) | 1981-07-16 | 1981-07-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11139381A JPS5812372A (en) | 1981-07-16 | 1981-07-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5812372A true JPS5812372A (en) | 1983-01-24 |
Family
ID=14560015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11139381A Pending JPS5812372A (en) | 1981-07-16 | 1981-07-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812372A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245717A (en) * | 1985-08-23 | 1987-02-27 | Nippon Ester Co Ltd | Polyester modified cross section thick and thin yarn |
| JPS63256717A (en) * | 1987-04-10 | 1988-10-24 | Toray Ind Inc | Silky rayon-like polyester yarn having excellent coloring property |
| US20220356604A1 (en) * | 2019-12-29 | 2022-11-10 | Jiangsu Hengli Chemical Fibre Co., Ltd. | Fiber for medical antibacterial fabric and preparation method therefor |
-
1981
- 1981-07-16 JP JP11139381A patent/JPS5812372A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245717A (en) * | 1985-08-23 | 1987-02-27 | Nippon Ester Co Ltd | Polyester modified cross section thick and thin yarn |
| JPS63256717A (en) * | 1987-04-10 | 1988-10-24 | Toray Ind Inc | Silky rayon-like polyester yarn having excellent coloring property |
| US20220356604A1 (en) * | 2019-12-29 | 2022-11-10 | Jiangsu Hengli Chemical Fibre Co., Ltd. | Fiber for medical antibacterial fabric and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4604789A (en) | Process for fabricating polysilicon resistor in polycide line | |
| US5187109A (en) | Lateral bipolar transistor and method of making the same | |
| US5187559A (en) | Semiconductor device and process for producing same | |
| US4475964A (en) | Method of manufacturing a semiconductor device | |
| CA1121070A (en) | Method for forming semiconductor contacts | |
| US5759887A (en) | Semiconductor device and a method of manufacturing a semiconductor device | |
| US6627971B1 (en) | Polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates | |
| KR100258203B1 (en) | Method for manufacturing analog semiconductor device | |
| US4432008A (en) | Gold-doped IC resistor region | |
| JP2577345B2 (en) | Semiconductor device | |
| JPS5812372A (en) | Manufacture of semiconductor device | |
| US5521416A (en) | Semiconductor device having gate electrode and impurity diffusion layer different in conductivity type and method of manufacturing the same | |
| US6162584A (en) | Method of fabricating polysilicon structures with different resistance values for gate electrodes, resistors and capacitor plates in an integrated circuit | |
| US6054367A (en) | Ion implant of the moat encroachment region of a LOCOS field isolation to increase the radiation hardness | |
| US6902992B2 (en) | Method of fabricating semiconductor device having semiconductor resistance element | |
| JPS6237548B2 (en) | ||
| JPS5617059A (en) | Semiconductor switching element | |
| JP3651901B2 (en) | Method for manufacturing lateral bipolar transistor | |
| KR940001894B1 (en) | Method of fabricating a semiconductor device | |
| JPH04151825A (en) | Semiconductor device and manufacture thereof | |
| JPS62244161A (en) | Formation of high resistance element | |
| JPS61228661A (en) | Semiconductor device and manufacture thereof | |
| JPS5826177B2 (en) | Manufacturing method of semiconductor device | |
| JPH06181310A (en) | Manufacture of semiconductor device | |
| JPH0247869A (en) | Method of forming electrode of semiconductor device |