JPS578441A - Production of ion selective electrode - Google Patents
Production of ion selective electrodeInfo
- Publication number
- JPS578441A JPS578441A JP8324880A JP8324880A JPS578441A JP S578441 A JPS578441 A JP S578441A JP 8324880 A JP8324880 A JP 8324880A JP 8324880 A JP8324880 A JP 8324880A JP S578441 A JPS578441 A JP S578441A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- sputtered
- gas
- inductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/333—Ion-selective electrodes or membranes
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To produce an inductive film having the uniform and stable thickness with good reproducibility, by sputtering a target composed of crystalline material and forming the inductive film on the surface of sputtered substrate. CONSTITUTION:A target 3 composed of crystalline material is attached on a target electrode 2 in a vacuum vessel 1 of a sputtering apparatus, and a substrate 5 to be sputtered is attached on a holder 4 of the substrate to be sputtered. Then, pressure of the vessel 1 is reduced by a vacuum pump and is brought near a vacuum. An inert gas or reactive gas or mixed gas is introduced to a degree of 10<-2>-10<-3> Torr. and introduced gas is ionized by applying an electric field between the target 3 and substrate 5 by a high frequency power source 6. Charged particles in plasma collide against the surface of the target 3 and atoms and molecules on the surface are sprung out. Said atoms and molecules are stuck to the surface of the sputtered substrate 5 and an inductive film 7 is formed on the substrate 5. An ion selective electrode is produced by attaching a lead wire 8 and hardening by a resin 9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8324880A JPS578441A (en) | 1980-06-18 | 1980-06-18 | Production of ion selective electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8324880A JPS578441A (en) | 1980-06-18 | 1980-06-18 | Production of ion selective electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS578441A true JPS578441A (en) | 1982-01-16 |
Family
ID=13797023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8324880A Pending JPS578441A (en) | 1980-06-18 | 1980-06-18 | Production of ion selective electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS578441A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5973728U (en) * | 1982-11-10 | 1984-05-18 | キヤノン株式会社 | flashlight device |
JPS62118304A (en) * | 1985-11-18 | 1987-05-29 | Asahi Optical Co Ltd | Fresnel lens |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5197491A (en) * | 1975-01-24 | 1976-08-27 | **************** ***te*******ni*no*******te*****chi***ne***************ka***ko** |
-
1980
- 1980-06-18 JP JP8324880A patent/JPS578441A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5197491A (en) * | 1975-01-24 | 1976-08-27 | **************** ***te*******ni*no*******te*****chi***ne***************ka***ko** |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5973728U (en) * | 1982-11-10 | 1984-05-18 | キヤノン株式会社 | flashlight device |
JPH0121294Y2 (en) * | 1982-11-10 | 1989-06-26 | ||
JPS62118304A (en) * | 1985-11-18 | 1987-05-29 | Asahi Optical Co Ltd | Fresnel lens |
JPH0554081B2 (en) * | 1985-11-18 | 1993-08-11 | Asahi Optical Co Ltd |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4179351A (en) | Cylindrical magnetron sputtering source | |
US4309266A (en) | Magnetron sputtering apparatus | |
ES8303542A1 (en) | Gasless ion plating process and apparatus | |
JPS5713174A (en) | Reactive sputtering method | |
EP0327406A3 (en) | Plasma processing method and apparatus for the deposition of thin films | |
IE41938L (en) | Depositing by reactive sputtering | |
EP0359567A3 (en) | Plasma processing method and apparatus | |
EP0686708A4 (en) | Film forming method and film forming apparatus | |
JPS578441A (en) | Production of ion selective electrode | |
JPS57194255A (en) | Sputtering device | |
Nyaiesh et al. | New radio frequency technique for deposition of hard carbon films | |
JPS56160652A (en) | Manufacture of glass sensitive film of glass electrode | |
JPS5775414A (en) | Manufacture of magneti substance thin film target for sputtering | |
JPS54141111A (en) | Method and apparatus for production of magnetic recording medium | |
US5403663A (en) | Process for coating a polycarbonate substrate with an aluminum-silicon alloy | |
JPS56121629A (en) | Film forming method | |
JPS5614498A (en) | Manufacture of transparent electrically conductive thin film | |
JPS5753828A (en) | Production of magnetic recording medium | |
RU2073743C1 (en) | Method and apparatus for application of coatings in vacuum | |
JPS57137469A (en) | Sputtering device | |
JPS56169770A (en) | Ionic plating device | |
JPS5591971A (en) | Thin film forming method | |
JPS56148833A (en) | Plasma etching method | |
EP0790328A1 (en) | Thin film deposition | |
JPS55148769A (en) | Magnetron type sputtering apparatus |