JPS5766685A - Rib structure semiconductor laser - Google Patents
Rib structure semiconductor laserInfo
- Publication number
- JPS5766685A JPS5766685A JP7447980A JP7447980A JPS5766685A JP S5766685 A JPS5766685 A JP S5766685A JP 7447980 A JP7447980 A JP 7447980A JP 7447980 A JP7447980 A JP 7447980A JP S5766685 A JPS5766685 A JP S5766685A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- photowave
- substrate
- clad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enable the oscillation of a semiconductor laser in the fundamental single lateral mode of low oscillation threshold value and high efficiency by forming a mesa stripe on a clad layer, an active layer and a photowave path layer and forming a current preventive layer at each of both sides of the stripe. CONSTITUTION:A clad layer 2, an active layer 3 and a photowave path layer 4 are sequentially laminated on a substrate, and a mesa stripe 10 is formed on the layer 4 by a photolithographic method. Then, this substrate 1 is again introduced into a growth furnace, and reverse conductive type current preventing layer 9 to the layer 4, a buried clad layer 5 and a cap layer 6 are sequentially grown.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7447980A JPS5766685A (en) | 1980-06-03 | 1980-06-03 | Rib structure semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7447980A JPS5766685A (en) | 1980-06-03 | 1980-06-03 | Rib structure semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5766685A true JPS5766685A (en) | 1982-04-22 |
Family
ID=13548442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7447980A Pending JPS5766685A (en) | 1980-06-03 | 1980-06-03 | Rib structure semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5766685A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59129486A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
EP0148021A2 (en) * | 1983-12-26 | 1985-07-10 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
JPS62200786A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
EP0440471A2 (en) * | 1990-01-31 | 1991-08-07 | Nec Corporation | Transverse-mode stabilized laser diode |
JPH07249825A (en) * | 1994-03-10 | 1995-09-26 | Nec Corp | Semiconductor laser |
JP2003086899A (en) * | 2001-09-12 | 2003-03-20 | Furukawa Electric Co Ltd:The | Semiconductor laser element and its manufacturing method |
-
1980
- 1980-06-03 JP JP7447980A patent/JPS5766685A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59129486A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
JPH021387B2 (en) * | 1983-01-14 | 1990-01-11 | Tokyo Shibaura Electric Co | |
EP0148021A2 (en) * | 1983-12-26 | 1985-07-10 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
JPS62200786A (en) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
EP0440471A2 (en) * | 1990-01-31 | 1991-08-07 | Nec Corporation | Transverse-mode stabilized laser diode |
JPH07249825A (en) * | 1994-03-10 | 1995-09-26 | Nec Corp | Semiconductor laser |
JP2003086899A (en) * | 2001-09-12 | 2003-03-20 | Furukawa Electric Co Ltd:The | Semiconductor laser element and its manufacturing method |
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