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JPS5766685A - Rib structure semiconductor laser - Google Patents

Rib structure semiconductor laser

Info

Publication number
JPS5766685A
JPS5766685A JP7447980A JP7447980A JPS5766685A JP S5766685 A JPS5766685 A JP S5766685A JP 7447980 A JP7447980 A JP 7447980A JP 7447980 A JP7447980 A JP 7447980A JP S5766685 A JPS5766685 A JP S5766685A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
photowave
substrate
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7447980A
Other languages
Japanese (ja)
Inventor
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7447980A priority Critical patent/JPS5766685A/en
Publication of JPS5766685A publication Critical patent/JPS5766685A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223Buried stripe structure
    • H01S5/2231Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the oscillation of a semiconductor laser in the fundamental single lateral mode of low oscillation threshold value and high efficiency by forming a mesa stripe on a clad layer, an active layer and a photowave path layer and forming a current preventive layer at each of both sides of the stripe. CONSTITUTION:A clad layer 2, an active layer 3 and a photowave path layer 4 are sequentially laminated on a substrate, and a mesa stripe 10 is formed on the layer 4 by a photolithographic method. Then, this substrate 1 is again introduced into a growth furnace, and reverse conductive type current preventing layer 9 to the layer 4, a buried clad layer 5 and a cap layer 6 are sequentially grown.
JP7447980A 1980-06-03 1980-06-03 Rib structure semiconductor laser Pending JPS5766685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7447980A JPS5766685A (en) 1980-06-03 1980-06-03 Rib structure semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7447980A JPS5766685A (en) 1980-06-03 1980-06-03 Rib structure semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5766685A true JPS5766685A (en) 1982-04-22

Family

ID=13548442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7447980A Pending JPS5766685A (en) 1980-06-03 1980-06-03 Rib structure semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5766685A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129486A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor laser device and manufacture thereof
EP0148021A2 (en) * 1983-12-26 1985-07-10 Kabushiki Kaisha Toshiba Semiconductor laser device
JPS62200786A (en) * 1986-02-28 1987-09-04 Toshiba Corp Semiconductor laser device and manufacture thereof
EP0440471A2 (en) * 1990-01-31 1991-08-07 Nec Corporation Transverse-mode stabilized laser diode
JPH07249825A (en) * 1994-03-10 1995-09-26 Nec Corp Semiconductor laser
JP2003086899A (en) * 2001-09-12 2003-03-20 Furukawa Electric Co Ltd:The Semiconductor laser element and its manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129486A (en) * 1983-01-14 1984-07-25 Toshiba Corp Semiconductor laser device and manufacture thereof
JPH021387B2 (en) * 1983-01-14 1990-01-11 Tokyo Shibaura Electric Co
EP0148021A2 (en) * 1983-12-26 1985-07-10 Kabushiki Kaisha Toshiba Semiconductor laser device
JPS62200786A (en) * 1986-02-28 1987-09-04 Toshiba Corp Semiconductor laser device and manufacture thereof
EP0440471A2 (en) * 1990-01-31 1991-08-07 Nec Corporation Transverse-mode stabilized laser diode
JPH07249825A (en) * 1994-03-10 1995-09-26 Nec Corp Semiconductor laser
JP2003086899A (en) * 2001-09-12 2003-03-20 Furukawa Electric Co Ltd:The Semiconductor laser element and its manufacturing method

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