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JPS5762550A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5762550A
JPS5762550A JP13747180A JP13747180A JPS5762550A JP S5762550 A JPS5762550 A JP S5762550A JP 13747180 A JP13747180 A JP 13747180A JP 13747180 A JP13747180 A JP 13747180A JP S5762550 A JPS5762550 A JP S5762550A
Authority
JP
Japan
Prior art keywords
lead
connection
electrode
substrate
plastically deformed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13747180A
Other languages
Japanese (ja)
Other versions
JPS6122461B2 (en
Inventor
Takashi Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13747180A priority Critical patent/JPS5762550A/en
Publication of JPS5762550A publication Critical patent/JPS5762550A/en
Publication of JPS6122461B2 publication Critical patent/JPS6122461B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable the connection of a lead to a terminal with high reliability even if a substrate is deflected by forming two or more plastically deformed parts at one lead at the connection of the lead to the terminal. CONSTITUTION:When bumps 2 on a semiconductor chip 1 are respectively connected to connection terminals 6 via leads 4, two plastically deformed parts 7, 7 are formed at one lead. In other words, pressure and supersonic wave are applied to the near side of the electrode of a semiconductor pellet 1 under weak condition and are applied to the far side under strong condition, thereby forming plastically deformed parts 7, 7 and bonding them. In this manner, since the optimum condition can be obtained at the high deflection of the substrate 5 at the near side of the electrode, and can also be obtained at the low deflection of the substrate at the far side f the electrode, the reliability of the connection can be enhanced as a whole.
JP13747180A 1980-10-01 1980-10-01 Semiconductor device Granted JPS5762550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13747180A JPS5762550A (en) 1980-10-01 1980-10-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13747180A JPS5762550A (en) 1980-10-01 1980-10-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5762550A true JPS5762550A (en) 1982-04-15
JPS6122461B2 JPS6122461B2 (en) 1986-05-31

Family

ID=15199376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13747180A Granted JPS5762550A (en) 1980-10-01 1980-10-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762550A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102040U (en) * 1984-12-10 1986-06-28
JPH01104031U (en) * 1987-12-25 1989-07-13
JPH02119153A (en) * 1988-06-01 1990-05-07 Hewlett Packard Co <Hp> Bonding method for integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102040U (en) * 1984-12-10 1986-06-28
JPH01104031U (en) * 1987-12-25 1989-07-13
JPH02119153A (en) * 1988-06-01 1990-05-07 Hewlett Packard Co <Hp> Bonding method for integrated circuit

Also Published As

Publication number Publication date
JPS6122461B2 (en) 1986-05-31

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