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JPS5762530A - Method and apparatus for removing photo-resist - Google Patents

Method and apparatus for removing photo-resist

Info

Publication number
JPS5762530A
JPS5762530A JP13586880A JP13586880A JPS5762530A JP S5762530 A JPS5762530 A JP S5762530A JP 13586880 A JP13586880 A JP 13586880A JP 13586880 A JP13586880 A JP 13586880A JP S5762530 A JPS5762530 A JP S5762530A
Authority
JP
Japan
Prior art keywords
photo
resist
ozone
film
decomposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13586880A
Other languages
Japanese (ja)
Inventor
Haruo Amada
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13586880A priority Critical patent/JPS5762530A/en
Publication of JPS5762530A publication Critical patent/JPS5762530A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To remove a photo-resist film rapidly and positively by a method wherein a treating liquid and ozone are blown against a wafer with a photo-resisted removal film, the photo-resisted film is removed, and the photo-resist removed is decomposed by another photo-resist decomposing section. CONSTITUTION:The wafer 1 to which the photo-resist film is formed is set onto a supporter 2. Sulfuric acid 5 as the treating liquid having predetermined temperature is supplied to a nozzle 10 through a supply pump 6 and a pressure pump 9. Ozone 11 is fed to the nozzle 10 through an ozone supply pipe 12. The sulfuric acid 5 as the treaing liquid and ozone 11 are supplied onto the wafer 1 in shower-shaped forms, and the resist film is wetted with sulfuric acid, decomposed with ozone and removed. Ozone 20 is supplied to a photo-resist decomposing chamber 18 from a lower section, and the photo-resist in the treating liquid is decomposed. Accordingly the photo-resist is rapidly removed positively and the yield of a semiconductor device is improved.
JP13586880A 1980-10-01 1980-10-01 Method and apparatus for removing photo-resist Pending JPS5762530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13586880A JPS5762530A (en) 1980-10-01 1980-10-01 Method and apparatus for removing photo-resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13586880A JPS5762530A (en) 1980-10-01 1980-10-01 Method and apparatus for removing photo-resist

Publications (1)

Publication Number Publication Date
JPS5762530A true JPS5762530A (en) 1982-04-15

Family

ID=15161639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13586880A Pending JPS5762530A (en) 1980-10-01 1980-10-01 Method and apparatus for removing photo-resist

Country Status (1)

Country Link
JP (1) JPS5762530A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0504431A1 (en) * 1990-10-09 1992-09-23 CHLORINE ENGINEERS CORP., Ltd. Method of removing organic coating
US5443942A (en) * 1990-11-28 1995-08-22 Canon Kabushiki Kaisha Process for removing resist
EP0959390A1 (en) * 1998-05-20 1999-11-24 STMicroelectronics S.r.l. Photoresist removal process.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0504431A1 (en) * 1990-10-09 1992-09-23 CHLORINE ENGINEERS CORP., Ltd. Method of removing organic coating
US5443942A (en) * 1990-11-28 1995-08-22 Canon Kabushiki Kaisha Process for removing resist
EP0959390A1 (en) * 1998-05-20 1999-11-24 STMicroelectronics S.r.l. Photoresist removal process.

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