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JPS5747873A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5747873A
JPS5747873A JP12100680A JP12100680A JPS5747873A JP S5747873 A JPS5747873 A JP S5747873A JP 12100680 A JP12100680 A JP 12100680A JP 12100680 A JP12100680 A JP 12100680A JP S5747873 A JPS5747873 A JP S5747873A
Authority
JP
Japan
Prior art keywords
vessel
electrodes
etching
vacuum
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12100680A
Other languages
Japanese (ja)
Inventor
Takashi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12100680A priority Critical patent/JPS5747873A/en
Publication of JPS5747873A publication Critical patent/JPS5747873A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the corrosion in an etching vessel and improve the uniformity of etching by affixing an org. film on the inside wall of a vacuum vessel and electrode surfaces in plasma etching of Al films. CONSTITUTION:An electric power source 8 is connected via an impedance matching box 9 via a vacuum seal 7 to the former of parallel flat plate electrodes 4, 5 insulated by insulators 6, 6' from a vacuum vessel 1, by which rf electric power is applied to both electrodes. Both electrodes are cooled by water cooling pipes 10, 10', and after the vessel 1 is evacuated to a prescribed degree of vacuum by an exhaust means 11, gaseous CCl4 and Cl2 are introduced through inlets 2, 3. The etching pressure of the vessel 1 is regulated by conductance valves 12, 12' sandwiching a liquid nitrogen trap 13, and gas plasma is formed between the electrodes 4, 5 by the electric glow discharge, whereby a sample 14 is etched. Here, the inside wall of the vessel 1 and the surfaces of the electrodes 4, 5 are coated with a hydrocarbon or chlorinated hydrocarbon type org. film 16.
JP12100680A 1980-09-03 1980-09-03 Plasma etching method Pending JPS5747873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12100680A JPS5747873A (en) 1980-09-03 1980-09-03 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12100680A JPS5747873A (en) 1980-09-03 1980-09-03 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5747873A true JPS5747873A (en) 1982-03-18

Family

ID=14800448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12100680A Pending JPS5747873A (en) 1980-09-03 1980-09-03 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5747873A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989774A (en) * 1982-11-10 1984-05-24 Mitsubishi Electric Corp Dry etching device
JPS60198821A (en) * 1984-03-23 1985-10-08 Anelva Corp Dry etching device
JPS61130494A (en) * 1984-11-29 1986-06-18 Tokuda Seisakusho Ltd Plasma etching device
JPS6276725A (en) * 1985-09-30 1987-04-08 Toshiba Corp Reactive plasma etching apparatus
JPH05304430A (en) * 1992-04-24 1993-11-16 Orion Denki Kk Automatic adjusting circuit of analog control part
EP0700577A4 (en) * 1993-05-28 1996-12-27 Univ Tennessee Res Corp Method and apparatus for glow discharge plasma treatment of polymer materials at atmospheric pressure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989774A (en) * 1982-11-10 1984-05-24 Mitsubishi Electric Corp Dry etching device
JPS60198821A (en) * 1984-03-23 1985-10-08 Anelva Corp Dry etching device
JPS61130494A (en) * 1984-11-29 1986-06-18 Tokuda Seisakusho Ltd Plasma etching device
JPS6276725A (en) * 1985-09-30 1987-04-08 Toshiba Corp Reactive plasma etching apparatus
JPH05304430A (en) * 1992-04-24 1993-11-16 Orion Denki Kk Automatic adjusting circuit of analog control part
EP0700577A4 (en) * 1993-05-28 1996-12-27 Univ Tennessee Res Corp Method and apparatus for glow discharge plasma treatment of polymer materials at atmospheric pressure

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