JPS5745288A - Thin film photo diode - Google Patents
Thin film photo diodeInfo
- Publication number
- JPS5745288A JPS5745288A JP55120816A JP12081680A JPS5745288A JP S5745288 A JPS5745288 A JP S5745288A JP 55120816 A JP55120816 A JP 55120816A JP 12081680 A JP12081680 A JP 12081680A JP S5745288 A JPS5745288 A JP S5745288A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thickness
- laminated
- cds
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 14
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000004298 light response Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enable easire production, larger length and area of the product along with a less leakage current and quick light response by means of a Cd oxide between a CdS film and a CdTd film of a thin film photo diode. CONSTITUTION:A transparent conductive film 2 is laminated on a light transmitting substrate 1 at a thickness of 100Angstrom -1mum and a CdS film 3 is laminated thereon at a thickness of 0.5-10mum. Then, the CdS film 3 heat treated in an atmosphere containing oxygen at 300-700 deg.C to partially oxidize the surface layer thereof whereby a Cd oxide film 4 is formed. Otherwise, a coat of CdO is laminated on the CdS film 3 at a thickness of 0.1-1mum to make the Cd oxide film 4. Then, a CdTe film 5 is laminated at a thickness of 0.2-5mum on the Cd oxide film 4 and additionally, overlayerd with a Te film or Cd film 6 at a thickness of 0.1-3mum. An ohmic electrode couple 7 of gold or the like is laid on the Te film or the Cd film 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55120816A JPS5745288A (en) | 1980-09-01 | 1980-09-01 | Thin film photo diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55120816A JPS5745288A (en) | 1980-09-01 | 1980-09-01 | Thin film photo diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5745288A true JPS5745288A (en) | 1982-03-15 |
Family
ID=14795675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55120816A Pending JPS5745288A (en) | 1980-09-01 | 1980-09-01 | Thin film photo diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5745288A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8188562B2 (en) | 2011-05-31 | 2012-05-29 | Primestar Solar, Inc. | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| US8241930B2 (en) | 2011-05-31 | 2012-08-14 | Primestar Solar, Inc. | Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device |
| US8247686B2 (en) | 2011-05-31 | 2012-08-21 | Primestar Solar, Inc. | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| US9054245B2 (en) | 2012-03-02 | 2015-06-09 | First Solar, Inc. | Doping an absorber layer of a photovoltaic device via diffusion from a window layer |
-
1980
- 1980-09-01 JP JP55120816A patent/JPS5745288A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8188562B2 (en) | 2011-05-31 | 2012-05-29 | Primestar Solar, Inc. | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| US8241930B2 (en) | 2011-05-31 | 2012-08-14 | Primestar Solar, Inc. | Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device |
| US8247686B2 (en) | 2011-05-31 | 2012-08-21 | Primestar Solar, Inc. | Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making |
| US9054245B2 (en) | 2012-03-02 | 2015-06-09 | First Solar, Inc. | Doping an absorber layer of a photovoltaic device via diffusion from a window layer |
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