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JPS56142684A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS56142684A
JPS56142684A JP4643880A JP4643880A JPS56142684A JP S56142684 A JPS56142684 A JP S56142684A JP 4643880 A JP4643880 A JP 4643880A JP 4643880 A JP4643880 A JP 4643880A JP S56142684 A JPS56142684 A JP S56142684A
Authority
JP
Japan
Prior art keywords
film
cds
forming
photoelectric converter
as2se3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4643880A
Other languages
Japanese (ja)
Inventor
Koji Mori
Hideo Segawa
Koichi Sakurai
Masakuni Itagaki
Tatsumi Ishiwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP4643880A priority Critical patent/JPS56142684A/en
Publication of JPS56142684A publication Critical patent/JPS56142684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce the dark current of and accelerate the light responsive speed of a photoelectric converter by forming a transparent conductive film on a light transmitting substance, further forming a CdS film thereon, heat treating it, and then forming a CdTe film As2Se3 film and an opposed electrode thereon. CONSTITUTION:A transparent conductive film 2 is formed on a light transmitting substrate 1. A CdS film 3 is formed on the film 2, is heat treated under atmosphere containing oxygen, and a CdS part oxide film 4 is formed. A CdTe film 5 and an As2Se3 film 6 are formed on the film 4, and further the opposed electrodes 7 are formed on the film 6.
JP4643880A 1980-04-09 1980-04-09 Photoelectric converter Pending JPS56142684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4643880A JPS56142684A (en) 1980-04-09 1980-04-09 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4643880A JPS56142684A (en) 1980-04-09 1980-04-09 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS56142684A true JPS56142684A (en) 1981-11-07

Family

ID=12747156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4643880A Pending JPS56142684A (en) 1980-04-09 1980-04-09 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS56142684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102810593A (en) * 2011-05-31 2012-12-05 初星太阳能公司 Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
CN102810597A (en) * 2011-05-31 2012-12-05 初星太阳能公司 Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
EP2530726A3 (en) * 2011-05-31 2014-11-19 First Solar Malaysia SDN.BHD Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102810593A (en) * 2011-05-31 2012-12-05 初星太阳能公司 Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
CN102810597A (en) * 2011-05-31 2012-12-05 初星太阳能公司 Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
EP2530726A3 (en) * 2011-05-31 2014-11-19 First Solar Malaysia SDN.BHD Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
EP2530727A3 (en) * 2011-05-31 2014-11-19 First Solar Malaysia SDN.BHD Multi-layer n-type stack for cadmium telluride based thin film photovoltaic devices and methods of making

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