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JPS5743418A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5743418A
JPS5743418A JP11933280A JP11933280A JPS5743418A JP S5743418 A JPS5743418 A JP S5743418A JP 11933280 A JP11933280 A JP 11933280A JP 11933280 A JP11933280 A JP 11933280A JP S5743418 A JPS5743418 A JP S5743418A
Authority
JP
Japan
Prior art keywords
layer
electrode material
insulating layer
electrode
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11933280A
Other languages
Japanese (ja)
Other versions
JPS6328335B2 (en
Inventor
Ichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11933280A priority Critical patent/JPS5743418A/en
Publication of JPS5743418A publication Critical patent/JPS5743418A/en
Publication of JPS6328335B2 publication Critical patent/JPS6328335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an electrode structure having flattened surface by forming an insulating layer of approximately equal thickness to that of an electrode material so as to surround the electrode material formed on a silicon substrate. CONSTITUTION:An electrode material layer 22 is formed on a silicon substrate 21, and a polysilicon layer 23 is then formed on the layer 22. A resist pattern 24 is formed on the layer 23, and is then etched. Thereafter, the resist pattern 24 is removed. Subsequently, an SiOx is covered to form an insulating layer 25 of SiOx. Successively, the overall surface is etched, and smoothed flattened surfaces can be obtained on the insulating layer 25 and the electrode.
JP11933280A 1980-08-29 1980-08-29 Manufacture of semiconductor device Granted JPS5743418A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11933280A JPS5743418A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11933280A JPS5743418A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5743418A true JPS5743418A (en) 1982-03-11
JPS6328335B2 JPS6328335B2 (en) 1988-06-08

Family

ID=14758851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11933280A Granted JPS5743418A (en) 1980-08-29 1980-08-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743418A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051257A (en) * 1973-09-05 1975-05-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5051257A (en) * 1973-09-05 1975-05-08

Also Published As

Publication number Publication date
JPS6328335B2 (en) 1988-06-08

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