JPS5740929A - Processing method of resist - Google Patents
Processing method of resistInfo
- Publication number
- JPS5740929A JPS5740929A JP11750580A JP11750580A JPS5740929A JP S5740929 A JPS5740929 A JP S5740929A JP 11750580 A JP11750580 A JP 11750580A JP 11750580 A JP11750580 A JP 11750580A JP S5740929 A JPS5740929 A JP S5740929A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- concave section
- pinholeless
- microscopic
- workability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To increase both the pinholeless property and the microscopic workability for the subject resist by a method wherein, after a concave section has been formed by irradiating and exposing a beam on a thick resist which was applied on the film to be processed, the beam is irradiated on the bottom surface of the concave section, a developing process is performed and a stepped aperture is formed. CONSTITUTION:The resist 17 having enough thickness with which no pinholes will be generated is applied on the surface of the film 2 to be processed on a substrate 1 and an exposing process is performed using an electron beam of low voltage. A concave section 20, whereon a thin resist is rematined on the bottom surface, not in a through hole, is formed on the resist 17 by performing a developing process. When exposure and developing processes are performed again on a part of the bottom surface of the concave section of the remaining resist, stepped apertures 20 and 21 are formed. Through these procedures, the pinholeless property and the microscopic workability can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11750580A JPS5740929A (en) | 1980-08-25 | 1980-08-25 | Processing method of resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11750580A JPS5740929A (en) | 1980-08-25 | 1980-08-25 | Processing method of resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5740929A true JPS5740929A (en) | 1982-03-06 |
Family
ID=14713406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11750580A Pending JPS5740929A (en) | 1980-08-25 | 1980-08-25 | Processing method of resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5740929A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6229134A (en) * | 1985-07-30 | 1987-02-07 | Matsushita Electronics Corp | Formation of fine pattern |
| JP2009044076A (en) * | 2007-08-10 | 2009-02-26 | Toshiba Corp | Pattern forming method and manufacturing method of semiconductor device |
-
1980
- 1980-08-25 JP JP11750580A patent/JPS5740929A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6229134A (en) * | 1985-07-30 | 1987-02-07 | Matsushita Electronics Corp | Formation of fine pattern |
| JP2009044076A (en) * | 2007-08-10 | 2009-02-26 | Toshiba Corp | Pattern forming method and manufacturing method of semiconductor device |
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