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JPS5735827A - Semiconductor optical waveguide - Google Patents

Semiconductor optical waveguide

Info

Publication number
JPS5735827A
JPS5735827A JP11018580A JP11018580A JPS5735827A JP S5735827 A JPS5735827 A JP S5735827A JP 11018580 A JP11018580 A JP 11018580A JP 11018580 A JP11018580 A JP 11018580A JP S5735827 A JPS5735827 A JP S5735827A
Authority
JP
Japan
Prior art keywords
electrode
metal
semiconductor
light
optical waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11018580A
Other languages
Japanese (ja)
Inventor
Takashi Andou
Masashi Yamaguchi
Akiyuu Yamamoto
Zeio Kamimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11018580A priority Critical patent/JPS5735827A/en
Publication of JPS5735827A publication Critical patent/JPS5735827A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To achieve miniaturization and integration and to reduce a loss of light by forming an electrode on the top surface of a semiconductor with an insulating film between and by providing an electrode plate on the rear surface of the semiconductor. CONSTITUTION:On the top surface of a semiconductor 1, an insulating film 2 of oxide, etc., is formed and on it, striped metal 3 is provided; and on the rear surface, an electrode 6 is fitted. Applying a DC bias between the metal 3 and rear- surface electrode 6 forms a space charge area 4 in a crystal surface layer under the metal 3, and this area serves as a waveguide for light 5. In this case, when a negative bias voltage is applied to the metal 3 for the reverse-surface electrode 6, the refractive index of the space charge area 4 becomes greater than that of the circumference and an optical waveguide is formed. Thus, miniaturization and integration are achieved, and a loss of light is reduced.
JP11018580A 1980-08-13 1980-08-13 Semiconductor optical waveguide Pending JPS5735827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11018580A JPS5735827A (en) 1980-08-13 1980-08-13 Semiconductor optical waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11018580A JPS5735827A (en) 1980-08-13 1980-08-13 Semiconductor optical waveguide

Publications (1)

Publication Number Publication Date
JPS5735827A true JPS5735827A (en) 1982-02-26

Family

ID=14529192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11018580A Pending JPS5735827A (en) 1980-08-13 1980-08-13 Semiconductor optical waveguide

Country Status (1)

Country Link
JP (1) JPS5735827A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0783719A1 (en) * 1994-09-09 1997-07-16 Deacon Research Method for manipulating optical energy using poled structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455458A (en) * 1977-10-11 1979-05-02 Osaka Daigakuchiyou Light modulator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455458A (en) * 1977-10-11 1979-05-02 Osaka Daigakuchiyou Light modulator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0783719A1 (en) * 1994-09-09 1997-07-16 Deacon Research Method for manipulating optical energy using poled structure
EP0783719A4 (en) * 1994-09-09 1998-05-13 Deacon Research Method for manipulating optical energy using poled structure

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