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JPS5669879A - Semiconductor luminous device with lens - Google Patents

Semiconductor luminous device with lens

Info

Publication number
JPS5669879A
JPS5669879A JP14624679A JP14624679A JPS5669879A JP S5669879 A JPS5669879 A JP S5669879A JP 14624679 A JP14624679 A JP 14624679A JP 14624679 A JP14624679 A JP 14624679A JP S5669879 A JPS5669879 A JP S5669879A
Authority
JP
Japan
Prior art keywords
lens
light
type
gaas13
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14624679A
Other languages
Japanese (ja)
Inventor
Motoyuki Yamamoto
Yoichi Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14624679A priority Critical patent/JPS5669879A/en
Publication of JPS5669879A publication Critical patent/JPS5669879A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve external radiation efficiency by mounting a lens consisting of a semiconductor on a light radiant surface of a semiconductor luminous element. CONSTITUTION:A concave section 11a is formed at the center of N type GaAs11. P type GaAs13 and GaAlAs12 are stacked, and the P type GaAs13 is contacted with an electrode 16 at the central section of the layer 12 through the SiO212. When applying voltage between electrodes 14 and 16, a region 13a emits light. When attaching a lens 17 in GaP on the concave section 11a, light is focused. Since the GaP is large in a refractive index, external emissivity is improved, and a solid angle of radiant light is sufficiently reduced. And since prohibited band width is enough larger than the prohibited band width of the GaAs, attenuation in the lens is very little.
JP14624679A 1979-11-12 1979-11-12 Semiconductor luminous device with lens Pending JPS5669879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14624679A JPS5669879A (en) 1979-11-12 1979-11-12 Semiconductor luminous device with lens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14624679A JPS5669879A (en) 1979-11-12 1979-11-12 Semiconductor luminous device with lens

Publications (1)

Publication Number Publication Date
JPS5669879A true JPS5669879A (en) 1981-06-11

Family

ID=15403388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14624679A Pending JPS5669879A (en) 1979-11-12 1979-11-12 Semiconductor luminous device with lens

Country Status (1)

Country Link
JP (1) JPS5669879A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999066564A1 (en) * 1998-06-19 1999-12-23 Optek Technology, Inc. Light emitting diode having encapsulated microsphere lens
US6940704B2 (en) 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
EP2806470A1 (en) * 2013-05-21 2014-11-26 LSI Corporation Semiconductor optical emitting device with lens structure formed in a cavity of a substrate of the device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999066564A1 (en) * 1998-06-19 1999-12-23 Optek Technology, Inc. Light emitting diode having encapsulated microsphere lens
US6940704B2 (en) 2001-01-24 2005-09-06 Gelcore, Llc Semiconductor light emitting device
EP2806470A1 (en) * 2013-05-21 2014-11-26 LSI Corporation Semiconductor optical emitting device with lens structure formed in a cavity of a substrate of the device

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