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JPS5727090A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS5727090A
JPS5727090A JP10224680A JP10224680A JPS5727090A JP S5727090 A JPS5727090 A JP S5727090A JP 10224680 A JP10224680 A JP 10224680A JP 10224680 A JP10224680 A JP 10224680A JP S5727090 A JPS5727090 A JP S5727090A
Authority
JP
Japan
Prior art keywords
light emitting
region
emitting device
phs
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10224680A
Other languages
English (en)
Inventor
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10224680A priority Critical patent/JPS5727090A/ja
Publication of JPS5727090A publication Critical patent/JPS5727090A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
JP10224680A 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device Pending JPS5727090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10224680A JPS5727090A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10224680A JPS5727090A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5727090A true JPS5727090A (en) 1982-02-13

Family

ID=14322246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10224680A Pending JPS5727090A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5727090A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
JP2007258640A (ja) * 2006-03-27 2007-10-04 Victor Co Of Japan Ltd 半導体素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
JP2007258640A (ja) * 2006-03-27 2007-10-04 Victor Co Of Japan Ltd 半導体素子及びその製造方法

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