[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5727090A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS5727090A
JPS5727090A JP10224680A JP10224680A JPS5727090A JP S5727090 A JPS5727090 A JP S5727090A JP 10224680 A JP10224680 A JP 10224680A JP 10224680 A JP10224680 A JP 10224680A JP S5727090 A JPS5727090 A JP S5727090A
Authority
JP
Japan
Prior art keywords
light emitting
region
emitting device
phs
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10224680A
Other languages
Japanese (ja)
Inventor
Seiji Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10224680A priority Critical patent/JPS5727090A/en
Publication of JPS5727090A publication Critical patent/JPS5727090A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain long life in the semiconductor light emitting device having a PHS (plated heat sink) structure, by alleviating the generation of the stress in the boundary part of the PHS region and the non-PHS region. CONSTITUTION:In the case the end-surface radiating type semiconductor light emitting device, wherein a thick-film electrode having excellent heat conductivity, is provided on the surface adjacent to the light emitting region, a first metal layer 14 which is to become an ohmic electrode is formed on the surface adjacent to the light emitting region in a semiconductor wafer 1, wherein a pluarlity of light emitting element are formed. Then a second metal layer 16 which is thicker than said first metal layer 14 is formed. Third metal layers 171-172, which have excellent heat conductivity and are separated for each element region, are formed on the layer 16. Thereafter, cleavage is performed and the light emitting elements are separated.
JP10224680A 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device Pending JPS5727090A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10224680A JPS5727090A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10224680A JPS5727090A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5727090A true JPS5727090A (en) 1982-02-13

Family

ID=14322246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10224680A Pending JPS5727090A (en) 1980-07-25 1980-07-25 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5727090A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
JP2007258640A (en) * 2006-03-27 2007-10-04 Victor Co Of Japan Ltd Semiconductor element and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
JP2007258640A (en) * 2006-03-27 2007-10-04 Victor Co Of Japan Ltd Semiconductor element and its manufacturing method

Similar Documents

Publication Publication Date Title
JPS5373083A (en) Method of producing semiconductor
GB1127070A (en) Electroplated contacts for semiconductor devices
GB1200426A (en) Method for providing a planar transistor with heat-dissipating top base and emitter contacts
US3577631A (en) Process for fabricating infrared detector arrays and resulting article of manufacture
JPS5727090A (en) Manufacture of semiconductor light emitting device
US4698901A (en) Mesa semiconductor device
JPS57172765A (en) Electrostatic induction thyristor
JPS5661170A (en) Preparation of field effect transistor
JPS57199277A (en) Semiconductor luminous elements and manufacture thereof
TW343377B (en) Via structure and production process thereof
JPS57181160A (en) Transistor
JPS5661175A (en) Thin-film solar cell
SE8008879L (en) SEMICONDUCTOR DEVICE
US4320571A (en) Stencil mask process for high power, high speed controlled rectifiers
JPS56158485A (en) Schottky barrier diode element
JPS56110285A (en) Semiconductor laser
SE8503835L (en) SET TO MANUFACTURE SOLAR CELLS
JPS6421965A (en) Mos transistor
JPS5511370A (en) Semiconductor laser system
JPS57181143A (en) Manufacture of semiconductor device
JPS57188885A (en) Semiconductor pressure sensor
JPS5649566A (en) Semiconductor device
JPS5730390A (en) Josephson junction element
JPS57130439A (en) Insulating semiconductor device
JPS56162895A (en) Manufacture of semiconductor laser