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JPS5726481A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS5726481A
JPS5726481A JP10161880A JP10161880A JPS5726481A JP S5726481 A JPS5726481 A JP S5726481A JP 10161880 A JP10161880 A JP 10161880A JP 10161880 A JP10161880 A JP 10161880A JP S5726481 A JPS5726481 A JP S5726481A
Authority
JP
Japan
Prior art keywords
region
carrier
type
voltage
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10161880A
Other languages
Japanese (ja)
Inventor
Takahiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10161880A priority Critical patent/JPS5726481A/en
Priority to US06/285,317 priority patent/US4450464A/en
Publication of JPS5726481A publication Critical patent/JPS5726481A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To perform extremely high speed and stable vertical transfer in an image pickup device by employing a vertical n<+>n<->n<+> configuration having p type well gate and vertically transferring via controlled drift electric field. CONSTITUTION:An n<-> type region 303 is formed directly under an n<+> type diffused layer 302 becoming a photodiode, and a p type region 304 operating as a gate surrounds the periphery of the region 303. The carrier photoelectrically converted from incident light 305 via diode 302 and stored operates to raise the voltage of an external power source E' and to lower the barrier voltage of the channel of the region 303, and reaches the lower n<+> type region 306 vertically via the channel of the region 303. The carrier is then collected to a depletion layer formed in the region 306 by the voltage applied to the terminals 311, 312. Thereafter, 2-phase drive pulses applied to the terminals 311, 312 operate to frame transfer the carrier to the right side, and the carrier is thus horizontally transferred under the electrode of the horizontal transfer CCD17.
JP10161880A 1980-07-23 1980-07-23 Solid state image pickup device Pending JPS5726481A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10161880A JPS5726481A (en) 1980-07-23 1980-07-23 Solid state image pickup device
US06/285,317 US4450464A (en) 1980-07-23 1981-07-22 Solid state area imaging apparatus having a charge transfer arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10161880A JPS5726481A (en) 1980-07-23 1980-07-23 Solid state image pickup device

Publications (1)

Publication Number Publication Date
JPS5726481A true JPS5726481A (en) 1982-02-12

Family

ID=14305384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10161880A Pending JPS5726481A (en) 1980-07-23 1980-07-23 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS5726481A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353994A (en) * 2004-06-14 2005-12-22 Sony Corp Solid-state imaging element and its driving method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874190A (en) * 1971-12-23 1973-10-05
JPS4949579A (en) * 1972-09-14 1974-05-14

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874190A (en) * 1971-12-23 1973-10-05
JPS4949579A (en) * 1972-09-14 1974-05-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005353994A (en) * 2004-06-14 2005-12-22 Sony Corp Solid-state imaging element and its driving method

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