JPS5726464A - High frequency and high power bipolar transistor - Google Patents
High frequency and high power bipolar transistorInfo
- Publication number
- JPS5726464A JPS5726464A JP10154980A JP10154980A JPS5726464A JP S5726464 A JPS5726464 A JP S5726464A JP 10154980 A JP10154980 A JP 10154980A JP 10154980 A JP10154980 A JP 10154980A JP S5726464 A JPS5726464 A JP S5726464A
- Authority
- JP
- Japan
- Prior art keywords
- base layer
- impurity density
- type
- bipolar transistor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 4
- 229920006395 saturated elastomer Polymers 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain large saturated power without increasing the collector area in a bipolar transistor by decreasing the impurity density of a base layer except a base layer disposed under an emitter layer than that of the base layer disposed under the emitter layer. CONSTITUTION:The first p type base layer 12a is formed to be isolated from the surface of a transistor Tr at one region of the substrate 11. The second base layer 12 surrounding the side of the base layer 12a and reaching the surface of the Tr is formed of p<-> type having lower impurity density than the base layer 12a. An n<+> type emitter layer 13 is formed in the region surrounded by the base layers 12a, 12b. Thus, large current amplification factor hFE can be elongated due to the existence of the low impurity density base layer 12b, and the saturated output can be improved. Further, the oscillation at the high frequency operation time can be prevented due to the existence of the relatively high impurity density base layer 12a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10154980A JPS5726464A (en) | 1980-07-24 | 1980-07-24 | High frequency and high power bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10154980A JPS5726464A (en) | 1980-07-24 | 1980-07-24 | High frequency and high power bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5726464A true JPS5726464A (en) | 1982-02-12 |
Family
ID=14303505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10154980A Pending JPS5726464A (en) | 1980-07-24 | 1980-07-24 | High frequency and high power bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5726464A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58222570A (en) * | 1982-06-18 | 1983-12-24 | Nec Home Electronics Ltd | Transistor |
-
1980
- 1980-07-24 JP JP10154980A patent/JPS5726464A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58222570A (en) * | 1982-06-18 | 1983-12-24 | Nec Home Electronics Ltd | Transistor |
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