JPS57173940A - Mask for photoetching - Google Patents
Mask for photoetchingInfo
- Publication number
- JPS57173940A JPS57173940A JP5899581A JP5899581A JPS57173940A JP S57173940 A JPS57173940 A JP S57173940A JP 5899581 A JP5899581 A JP 5899581A JP 5899581 A JP5899581 A JP 5899581A JP S57173940 A JPS57173940 A JP S57173940A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- split
- chip
- pattern
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001259 photo etching Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000007689 inspection Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q7/00—Arrangements for handling work specially combined with or arranged in, or specially adapted for use in connection with, machine tools, e.g. for conveying, loading, positioning, discharging, sorting
- B23Q7/16—Loading work on to conveyors; Arranging work on conveyors, e.g. varying spacing between individual workpieces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To exclude inferior chips split off the end part, and to manufacture only chips being hard to generate split of wafer by a method wherein constitution of pattern is made as to have only the arrangement of pattern units corresponding to chip units having no split of end part on the wafer. CONSTITUTION:When an example of constitution of a mask 1 for photoetching wherein the diameter of an Si wafer 4 is 50phimm., and the size of a chip is 3X3mm./ ? is shown, constitution 2a of pattern of the mask 1a is consisting of the arrangement of 32 pattern units corresponding to chip units of the total number 164 having no split of end part. Because the photoetching mask thereof is consisting of only the pattern units corresponding to the chip units having no split of end part on the wafer like this, when the mask thereof is applied as a mask for electrode wiring, for example, to mistake an inferior chip being split a part thereof for an excellent article is not occurred when inspection of electric characteristic is to be performed, and the inferior chip can be checked precisely. Moreover when the mask thereof is applied as a mask for formation of the back etching pattern, production of split of wafer can be suppressed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5899581A JPS57173940A (en) | 1981-04-17 | 1981-04-17 | Mask for photoetching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5899581A JPS57173940A (en) | 1981-04-17 | 1981-04-17 | Mask for photoetching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57173940A true JPS57173940A (en) | 1982-10-26 |
Family
ID=13100425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5899581A Pending JPS57173940A (en) | 1981-04-17 | 1981-04-17 | Mask for photoetching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57173940A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263227A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1981
- 1981-04-17 JP JP5899581A patent/JPS57173940A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263227A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Manufacture of semiconductor device |
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