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JPS57156400A - Crucible for preparing single crystal - Google Patents

Crucible for preparing single crystal

Info

Publication number
JPS57156400A
JPS57156400A JP4036581A JP4036581A JPS57156400A JP S57156400 A JPS57156400 A JP S57156400A JP 4036581 A JP4036581 A JP 4036581A JP 4036581 A JP4036581 A JP 4036581A JP S57156400 A JPS57156400 A JP S57156400A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
main body
melting
noble metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4036581A
Other languages
Japanese (ja)
Inventor
Hisao Hara
Hirohide Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP4036581A priority Critical patent/JPS57156400A/en
Publication of JPS57156400A publication Critical patent/JPS57156400A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain the titled crucible less expansively than an Ir crucible, having longer life than it, by covering a main body of a crucible made of a high-melting metal such as W, Mo, Ta, Nb, Rh, platinum rhodium, etc. with a noble metal such as Ir, Pt, etc.
CONSTITUTION: A main body of a crucible is made of high-melting W, Mo, Ta, Nb, Rh, platinum, which is less expensive than Ir, and more easily processed, and its surface is covered with a noble metal such as Ir, Pt, by chemical vapor phase deposite or metallizing. By doing ths, the deformation of the bottom, which occurs in a crucible like the existing Ir crucible can be prevented, and the life of a crucible can be extremely improved.
COPYRIGHT: (C)1982,JPO&Japio
JP4036581A 1981-03-23 1981-03-23 Crucible for preparing single crystal Pending JPS57156400A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4036581A JPS57156400A (en) 1981-03-23 1981-03-23 Crucible for preparing single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4036581A JPS57156400A (en) 1981-03-23 1981-03-23 Crucible for preparing single crystal

Publications (1)

Publication Number Publication Date
JPS57156400A true JPS57156400A (en) 1982-09-27

Family

ID=12578607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4036581A Pending JPS57156400A (en) 1981-03-23 1981-03-23 Crucible for preparing single crystal

Country Status (1)

Country Link
JP (1) JPS57156400A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193870U (en) * 1983-06-08 1984-12-22 東北金属工業株式会社 Single crystal manufacturing crucible
JPS61219787A (en) * 1985-03-26 1986-09-30 Kyocera Corp Crucible for producing single crystal for high-purity semiconductor
JPH01119595A (en) * 1987-11-02 1989-05-11 Tanaka Kikinzoku Kogyo Kk Material for single crystal growing crucible
JPH01145392A (en) * 1987-11-30 1989-06-07 Tanaka Kikinzoku Kogyo Kk Iridium crucible and production thereof
WO2016010040A1 (en) * 2014-07-14 2016-01-21 株式会社福田結晶技術研究所 Lithium tantalate single crystal growth device and growth method
JP2017222537A (en) * 2016-06-15 2017-12-21 株式会社福田結晶技術研究所 Crucible, and single crystal growing unit and growing method
JP2021018890A (en) * 2019-07-18 2021-02-15 国立大学法人東北大学 Heater and crucible

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193870U (en) * 1983-06-08 1984-12-22 東北金属工業株式会社 Single crystal manufacturing crucible
JPS61219787A (en) * 1985-03-26 1986-09-30 Kyocera Corp Crucible for producing single crystal for high-purity semiconductor
JPH01119595A (en) * 1987-11-02 1989-05-11 Tanaka Kikinzoku Kogyo Kk Material for single crystal growing crucible
JPH01145392A (en) * 1987-11-30 1989-06-07 Tanaka Kikinzoku Kogyo Kk Iridium crucible and production thereof
WO2016010040A1 (en) * 2014-07-14 2016-01-21 株式会社福田結晶技術研究所 Lithium tantalate single crystal growth device and growth method
JPWO2016010040A1 (en) * 2014-07-14 2017-04-27 株式会社福田結晶技術研究所 Apparatus and method for growing lithium tantalate single crystal
JP2017222537A (en) * 2016-06-15 2017-12-21 株式会社福田結晶技術研究所 Crucible, and single crystal growing unit and growing method
JP2021018890A (en) * 2019-07-18 2021-02-15 国立大学法人東北大学 Heater and crucible

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