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JPS57133636A - Film forming device utilizing plasma at low temperature - Google Patents

Film forming device utilizing plasma at low temperature

Info

Publication number
JPS57133636A
JPS57133636A JP1898681A JP1898681A JPS57133636A JP S57133636 A JPS57133636 A JP S57133636A JP 1898681 A JP1898681 A JP 1898681A JP 1898681 A JP1898681 A JP 1898681A JP S57133636 A JPS57133636 A JP S57133636A
Authority
JP
Japan
Prior art keywords
plasma
cylinder
end plate
lead
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1898681A
Other languages
Japanese (ja)
Other versions
JPS6367332B2 (en
Inventor
Seitaro Matsuo
Hideo Yoshihara
Shinichi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1898681A priority Critical patent/JPS57133636A/en
Priority to CA000375908A priority patent/CA1159012A/en
Priority to US06/257,616 priority patent/US4401054A/en
Priority to FR8108726A priority patent/FR2481838A1/en
Priority to DE3117252A priority patent/DE3117252C2/en
Priority to NL8102172A priority patent/NL191267C/en
Priority to GB8113505A priority patent/GB2076587B/en
Publication of JPS57133636A publication Critical patent/JPS57133636A/en
Publication of JPS6367332B2 publication Critical patent/JPS6367332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a thin film of high quality without having the help of heat energy by a method wherein an end plate with a plasma lead-out window is movably constructed, a highly permeable material is arranged on the peripheral region of a magnetic coil, and the plasma with a high degree of activation is grown efficiently. CONSTITUTION:When a plasma growing chamber 1 is arranged facing the sample substrate 11 placed on a sample cooling stand 20, the following structure is formed. The end plate 14, having a plasma lead-out window 9, is inserted in a cylinder 15 maintaining a soft contact between the plate 14 and the cylinder 15, and the cylinder 15 is formed in such a manner that its vertical measurement will be adjustable using the screw, which is not shown in the diagram, provided on the lower surface of the cylinder 15. Also, a turn-back groove 16 of choke structure is provided between the end plate 14 and the inner surface of the cylinder 15 in order to prevent the abnormal discharge due to a microwave, and this enables the plasma growing chamber 1 to perform an optimum operation as a microwave cavity resonator. Besides, a ring-type member 18 made of highly permeable soft iron is fitted, along the waveguide 4, on the upper part of the microwave lead-in window 3, and the exciting coil 13 located inside the growing chamber 1 is surrounded by a housing having a high permeability.
JP1898681A 1980-05-02 1981-02-13 Film forming device utilizing plasma at low temperature Granted JPS57133636A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP1898681A JPS57133636A (en) 1981-02-13 1981-02-13 Film forming device utilizing plasma at low temperature
CA000375908A CA1159012A (en) 1980-05-02 1981-04-22 Plasma deposition apparatus
US06/257,616 US4401054A (en) 1980-05-02 1981-04-27 Plasma deposition apparatus
FR8108726A FR2481838A1 (en) 1980-05-02 1981-04-30 PLASMA DEPOSITION APPARATUS FOR FORMING A FILM ON A SUBSTRATE
DE3117252A DE3117252C2 (en) 1980-05-02 1981-04-30 Plasma deposition device
NL8102172A NL191267C (en) 1980-05-02 1981-05-01 Device for plasma processing of a substrate.
GB8113505A GB2076587B (en) 1980-05-02 1981-05-01 Plasma deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1898681A JPS57133636A (en) 1981-02-13 1981-02-13 Film forming device utilizing plasma at low temperature

Publications (2)

Publication Number Publication Date
JPS57133636A true JPS57133636A (en) 1982-08-18
JPS6367332B2 JPS6367332B2 (en) 1988-12-26

Family

ID=11986903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1898681A Granted JPS57133636A (en) 1980-05-02 1981-02-13 Film forming device utilizing plasma at low temperature

Country Status (1)

Country Link
JP (1) JPS57133636A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115235A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Formimg method of insulation film on compound semiconductor substrate
JPS60116781A (en) * 1983-11-28 1985-06-24 Kyocera Corp Production of boron nitride film having high hardness
JPS60116780A (en) * 1983-11-28 1985-06-24 Kyocera Corp Manufacture of high hardness boron nitride film
JPS6147628A (en) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> Formation of semiconductor thin film and apparatus therefor
JPS6380522A (en) * 1986-09-24 1988-04-11 Nec Corp Excitation species cvd apparatus
JPS63227777A (en) * 1987-03-17 1988-09-22 Nippon Telegr & Teleph Corp <Ntt> Device for forming thin film
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode
US5069928A (en) * 1988-02-01 1991-12-03 Canon Kabushiki Kaisha Microwave chemical vapor deposition apparatus and feedback control method
US5296036A (en) * 1990-11-29 1994-03-22 Canon Kabushiki Kaisha Apparatus for continuously forming a large area functional deposit film including microwave transmissive member transfer mean
EP0406690A3 (en) * 1989-06-28 1994-11-23 Canon Kk Process for continuously forming a large area functional deposited film by microwave pcvd method and an apparatus suitable for practicing the same
US5397395A (en) * 1990-10-29 1995-03-14 Canon Kabushiki Kaisha Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same
US5514217A (en) * 1990-11-16 1996-05-07 Canon Kabushiki Kaisha Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
US5976257A (en) * 1991-01-23 1999-11-02 Canon Kabushiki Kaisha Apparatus for continuously forming a large area deposited film by means of microwave plasma CVD process
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
WO2019239765A1 (en) * 2018-06-14 2019-12-19 株式会社エスイー Manufacturing device and manufacturing method for treating raw material with microwave surface wave plasma and obtaining product different from raw material
JP2021037511A (en) * 2018-06-14 2021-03-11 株式会社エスイー Manufacturing device and manufacturing method for providing product different from raw material by treating raw material with micro wave surface wave plasma

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115235A (en) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> Formimg method of insulation film on compound semiconductor substrate
JPS60116781A (en) * 1983-11-28 1985-06-24 Kyocera Corp Production of boron nitride film having high hardness
JPS60116780A (en) * 1983-11-28 1985-06-24 Kyocera Corp Manufacture of high hardness boron nitride film
JPH0524992B2 (en) * 1983-11-28 1993-04-09 Kyocera Corp
JPH0524991B2 (en) * 1983-11-28 1993-04-09 Kyocera Corp
JPS6147628A (en) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> Formation of semiconductor thin film and apparatus therefor
JPS6380522A (en) * 1986-09-24 1988-04-11 Nec Corp Excitation species cvd apparatus
JPH0616496B2 (en) * 1986-09-24 1994-03-02 日本電気株式会社 Excited seed CVD device
JPS63227777A (en) * 1987-03-17 1988-09-22 Nippon Telegr & Teleph Corp <Ntt> Device for forming thin film
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode
US5069928A (en) * 1988-02-01 1991-12-03 Canon Kabushiki Kaisha Microwave chemical vapor deposition apparatus and feedback control method
US6253703B1 (en) * 1988-02-01 2001-07-03 Canon Kabushiki Kaisha Microwave chemical vapor deposition apparatus
EP0406690A3 (en) * 1989-06-28 1994-11-23 Canon Kk Process for continuously forming a large area functional deposited film by microwave pcvd method and an apparatus suitable for practicing the same
US5510151A (en) * 1989-06-28 1996-04-23 Canon Kabushiki Kaisha Continuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating space
US5714010A (en) * 1989-06-28 1998-02-03 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the same
US5397395A (en) * 1990-10-29 1995-03-14 Canon Kabushiki Kaisha Method of continuously forming a large area functional deposited film by microwave PCVD and apparatus for the same
US5523126A (en) * 1990-10-29 1996-06-04 Canon Kabushiki Kaisha Method of continuously forming a large area functional deposited film by microwave PCVD
US5514217A (en) * 1990-11-16 1996-05-07 Canon Kabushiki Kaisha Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
US5296036A (en) * 1990-11-29 1994-03-22 Canon Kabushiki Kaisha Apparatus for continuously forming a large area functional deposit film including microwave transmissive member transfer mean
US5976257A (en) * 1991-01-23 1999-11-02 Canon Kabushiki Kaisha Apparatus for continuously forming a large area deposited film by means of microwave plasma CVD process
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
WO2019239765A1 (en) * 2018-06-14 2019-12-19 株式会社エスイー Manufacturing device and manufacturing method for treating raw material with microwave surface wave plasma and obtaining product different from raw material
JP2019214033A (en) * 2018-06-14 2019-12-19 株式会社エスイー Manufacturing device and manufacturing method for providing product different from raw material by treating raw material with micro wave surface wave plasma
JP2021037511A (en) * 2018-06-14 2021-03-11 株式会社エスイー Manufacturing device and manufacturing method for providing product different from raw material by treating raw material with micro wave surface wave plasma

Also Published As

Publication number Publication date
JPS6367332B2 (en) 1988-12-26

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