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JPS55122871A - Vacuum vopor deposition apparatus - Google Patents

Vacuum vopor deposition apparatus

Info

Publication number
JPS55122871A
JPS55122871A JP2969579A JP2969579A JPS55122871A JP S55122871 A JPS55122871 A JP S55122871A JP 2969579 A JP2969579 A JP 2969579A JP 2969579 A JP2969579 A JP 2969579A JP S55122871 A JPS55122871 A JP S55122871A
Authority
JP
Japan
Prior art keywords
plate
heating
vacuum
deposition apparatus
viewing window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2969579A
Other languages
Japanese (ja)
Inventor
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2969579A priority Critical patent/JPS55122871A/en
Publication of JPS55122871A publication Critical patent/JPS55122871A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To enable to be removed the substance stuck on the inner face of window without breaking vacuum and to carry out and a high quality epitaxial growth with a good reproducibility, by closely arranging the evaporation body on the viewing window of semiconductor vapor deposition apparatus and providing the water cooling tube on the cylindrical part of the viewing window. CONSTITUTION:The heating body 2 made of tungsten, is closely fixed on the disk having a space for temperature measurement at the vacuum side of the glass plate 1 of viewing window of semiconductor vacuum vapor deposition apparatus and the cylindrical part is closely sealed by the plate 1 through the seal part 4. Then, the feed terminals 5a, 5b, are connected with the heating body 2 and the cooling tube is provided winding around on the outer circumference between the part 4 and the above terminals. As film stuck on the plate 1, is able to remove in a short time by turning an electric current on the heating body 2 and heating the above-mentioned space at about 300 deg.C and heating of another part of the apparatus is prevented by the tube 6. Contamination in the apparatus by the atmosphere at the time of exchanging the plate 1, is avoided and a high quality epitaxial growth is made possible.
JP2969579A 1979-03-14 1979-03-14 Vacuum vopor deposition apparatus Pending JPS55122871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2969579A JPS55122871A (en) 1979-03-14 1979-03-14 Vacuum vopor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2969579A JPS55122871A (en) 1979-03-14 1979-03-14 Vacuum vopor deposition apparatus

Publications (1)

Publication Number Publication Date
JPS55122871A true JPS55122871A (en) 1980-09-20

Family

ID=12283233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2969579A Pending JPS55122871A (en) 1979-03-14 1979-03-14 Vacuum vopor deposition apparatus

Country Status (1)

Country Link
JP (1) JPS55122871A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137314A (en) * 1984-12-07 1986-06-25 Sharp Corp Semiconductor crystal growth apparatus
US5575856A (en) * 1994-05-11 1996-11-19 Sony Corporation Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914763U (en) * 1972-05-10 1974-02-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914763U (en) * 1972-05-10 1974-02-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137314A (en) * 1984-12-07 1986-06-25 Sharp Corp Semiconductor crystal growth apparatus
US5575856A (en) * 1994-05-11 1996-11-19 Sony Corporation Thermal cycle resistant seal and method of sealing for use with semiconductor wafer processing apparatus

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