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JPS57111073A - Semiconductor light-receiving element - Google Patents

Semiconductor light-receiving element

Info

Publication number
JPS57111073A
JPS57111073A JP55187357A JP18735780A JPS57111073A JP S57111073 A JPS57111073 A JP S57111073A JP 55187357 A JP55187357 A JP 55187357A JP 18735780 A JP18735780 A JP 18735780A JP S57111073 A JPS57111073 A JP S57111073A
Authority
JP
Japan
Prior art keywords
layer
type
epitaxially grown
ingaas
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55187357A
Other languages
Japanese (ja)
Inventor
Hiroshi Okuda
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP55187357A priority Critical patent/JPS57111073A/en
Publication of JPS57111073A publication Critical patent/JPS57111073A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To increase the reverse withstand voltage of an avalanche photodiode by a method wherein an epitaxially grown guard ring layer, having a large low- density doped band gap, is provided. CONSTITUTION:For example, an N type InP layer 2 and an N type InGaAs layer 3, a P type InGaAs layer 4 are epitaxially grown in succession on an N type InP substrate 1. Then, using a sputter-evaporated SiO2 film 5 as a mask, a selective etching is performed as deep as to the N type InP layer 2. Besides, a low density P type layer 6, having a band gap larger than the InGaAs, is epitaxially grown as a guard ring on the part where the etching is performed. As a result, a large reverse withstand voltage can be obtained.
JP55187357A 1980-12-26 1980-12-26 Semiconductor light-receiving element Pending JPS57111073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187357A JPS57111073A (en) 1980-12-26 1980-12-26 Semiconductor light-receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187357A JPS57111073A (en) 1980-12-26 1980-12-26 Semiconductor light-receiving element

Publications (1)

Publication Number Publication Date
JPS57111073A true JPS57111073A (en) 1982-07-10

Family

ID=16204574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187357A Pending JPS57111073A (en) 1980-12-26 1980-12-26 Semiconductor light-receiving element

Country Status (1)

Country Link
JP (1) JPS57111073A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0727824A3 (en) * 1995-02-16 1997-06-04 Hewlett Packard Co Semiconductor light detector
EP0869561A2 (en) * 1997-04-01 1998-10-07 Hewlett-Packard Company Avalanche photodiode and method of making the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599782A (en) * 1979-01-25 1980-07-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of guard ring for semiconductor photodetector
JPS56158488A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599782A (en) * 1979-01-25 1980-07-30 Nippon Telegr & Teleph Corp <Ntt> Manufacture of guard ring for semiconductor photodetector
JPS56158488A (en) * 1980-05-12 1981-12-07 Mitsubishi Electric Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0727824A3 (en) * 1995-02-16 1997-06-04 Hewlett Packard Co Semiconductor light detector
US5843804A (en) * 1995-02-16 1998-12-01 Hewlett-Packard Company Method of making avalanche photodiodes with epitaxially-regrown guard rings
EP0869561A2 (en) * 1997-04-01 1998-10-07 Hewlett-Packard Company Avalanche photodiode and method of making the same
EP0869561A3 (en) * 1997-04-01 1999-09-01 Hewlett-Packard Company Avalanche photodiode and method of making the same

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