JPS5572083A - Semiconductor photo-detector - Google Patents
Semiconductor photo-detectorInfo
- Publication number
- JPS5572083A JPS5572083A JP14534578A JP14534578A JPS5572083A JP S5572083 A JPS5572083 A JP S5572083A JP 14534578 A JP14534578 A JP 14534578A JP 14534578 A JP14534578 A JP 14534578A JP S5572083 A JPS5572083 A JP S5572083A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- junction
- center
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To reduce the diffusion process while eliminating any guard ring by making the thickness at the center of the epitaxial layer positioned under the pn- junction less than those in other parts in the formation of the junction on the layer grown on a semiconductor substrate.
CONSTITUTION: An n-type InP substrate 9 is projected only at the center by a mesa etching while a layer 10 of n-type InGaAsP or InGaAs is allowed to grow epitaxially on the entire surface. Then, a p-type region 3 is formed in the layer 10 by diffusion or ion injection corresponding to the projected area and a pn-junction is produced on the interface with the layer 10. Otherwise, in stead of the mesa etching of the substrate 9, the center of the epitaxial layer 10 may be etched deep. Then, the entire substrate is covered with an inductive material layer 7 and a window is given on the region 3, where an electrode terminal T1 is mounted extending over the film 7 while an terminal T2 is mounted on the back of the substrate 9 through an electrode 2. This reduces dark current and the junction capacity, making the device ideal for avalanche photo diodes very small in the light detecting diameter.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14534578A JPS5572083A (en) | 1978-11-27 | 1978-11-27 | Semiconductor photo-detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14534578A JPS5572083A (en) | 1978-11-27 | 1978-11-27 | Semiconductor photo-detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5572083A true JPS5572083A (en) | 1980-05-30 |
Family
ID=15383025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14534578A Pending JPS5572083A (en) | 1978-11-27 | 1978-11-27 | Semiconductor photo-detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5572083A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60102774A (en) * | 1983-11-09 | 1985-06-06 | Kokusai Denshin Denwa Co Ltd <Kdd> | Manufacture of semiconductor element |
US4814847A (en) * | 1986-11-21 | 1989-03-21 | Bell Communications Research, Inc. | Ingaas semiconductor structures |
US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
KR100366046B1 (en) * | 2000-06-29 | 2002-12-27 | 삼성전자 주식회사 | Method of manufacturing avalanche phoetodiode |
KR100790020B1 (en) | 2005-09-26 | 2008-01-02 | 한국광기술원 | Diffusion Method Used In Manufacturing Process Of Avalanche Photo Detector |
WO2010057835A3 (en) * | 2008-11-21 | 2010-09-16 | Ketek Gmbh | Radiation detector use of a radiation detector and method for producing a radiation detector |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50158292A (en) * | 1973-11-28 | 1975-12-22 |
-
1978
- 1978-11-27 JP JP14534578A patent/JPS5572083A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50158292A (en) * | 1973-11-28 | 1975-12-22 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60102774A (en) * | 1983-11-09 | 1985-06-06 | Kokusai Denshin Denwa Co Ltd <Kdd> | Manufacture of semiconductor element |
JPH051631B2 (en) * | 1983-11-09 | 1993-01-08 | Kokusai Denshin Denwa Co Ltd | |
US4814847A (en) * | 1986-11-21 | 1989-03-21 | Bell Communications Research, Inc. | Ingaas semiconductor structures |
US5757057A (en) * | 1997-06-25 | 1998-05-26 | Advanced Photonix, Inc. | Large area avalanche photodiode array |
KR100366046B1 (en) * | 2000-06-29 | 2002-12-27 | 삼성전자 주식회사 | Method of manufacturing avalanche phoetodiode |
KR100790020B1 (en) | 2005-09-26 | 2008-01-02 | 한국광기술원 | Diffusion Method Used In Manufacturing Process Of Avalanche Photo Detector |
WO2010057835A3 (en) * | 2008-11-21 | 2010-09-16 | Ketek Gmbh | Radiation detector use of a radiation detector and method for producing a radiation detector |
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