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JPS5572083A - Semiconductor photo-detector - Google Patents

Semiconductor photo-detector

Info

Publication number
JPS5572083A
JPS5572083A JP14534578A JP14534578A JPS5572083A JP S5572083 A JPS5572083 A JP S5572083A JP 14534578 A JP14534578 A JP 14534578A JP 14534578 A JP14534578 A JP 14534578A JP S5572083 A JPS5572083 A JP S5572083A
Authority
JP
Japan
Prior art keywords
layer
substrate
junction
center
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14534578A
Other languages
Japanese (ja)
Inventor
Yoshihisa Yamamoto
Hiroaki Ando
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14534578A priority Critical patent/JPS5572083A/en
Publication of JPS5572083A publication Critical patent/JPS5572083A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To reduce the diffusion process while eliminating any guard ring by making the thickness at the center of the epitaxial layer positioned under the pn- junction less than those in other parts in the formation of the junction on the layer grown on a semiconductor substrate.
CONSTITUTION: An n-type InP substrate 9 is projected only at the center by a mesa etching while a layer 10 of n-type InGaAsP or InGaAs is allowed to grow epitaxially on the entire surface. Then, a p-type region 3 is formed in the layer 10 by diffusion or ion injection corresponding to the projected area and a pn-junction is produced on the interface with the layer 10. Otherwise, in stead of the mesa etching of the substrate 9, the center of the epitaxial layer 10 may be etched deep. Then, the entire substrate is covered with an inductive material layer 7 and a window is given on the region 3, where an electrode terminal T1 is mounted extending over the film 7 while an terminal T2 is mounted on the back of the substrate 9 through an electrode 2. This reduces dark current and the junction capacity, making the device ideal for avalanche photo diodes very small in the light detecting diameter.
COPYRIGHT: (C)1980,JPO&Japio
JP14534578A 1978-11-27 1978-11-27 Semiconductor photo-detector Pending JPS5572083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14534578A JPS5572083A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14534578A JPS5572083A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Publications (1)

Publication Number Publication Date
JPS5572083A true JPS5572083A (en) 1980-05-30

Family

ID=15383025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14534578A Pending JPS5572083A (en) 1978-11-27 1978-11-27 Semiconductor photo-detector

Country Status (1)

Country Link
JP (1) JPS5572083A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102774A (en) * 1983-11-09 1985-06-06 Kokusai Denshin Denwa Co Ltd <Kdd> Manufacture of semiconductor element
US4814847A (en) * 1986-11-21 1989-03-21 Bell Communications Research, Inc. Ingaas semiconductor structures
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array
KR100366046B1 (en) * 2000-06-29 2002-12-27 삼성전자 주식회사 Method of manufacturing avalanche phoetodiode
KR100790020B1 (en) 2005-09-26 2008-01-02 한국광기술원 Diffusion Method Used In Manufacturing Process Of Avalanche Photo Detector
WO2010057835A3 (en) * 2008-11-21 2010-09-16 Ketek Gmbh Radiation detector use of a radiation detector and method for producing a radiation detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158292A (en) * 1973-11-28 1975-12-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50158292A (en) * 1973-11-28 1975-12-22

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60102774A (en) * 1983-11-09 1985-06-06 Kokusai Denshin Denwa Co Ltd <Kdd> Manufacture of semiconductor element
JPH051631B2 (en) * 1983-11-09 1993-01-08 Kokusai Denshin Denwa Co Ltd
US4814847A (en) * 1986-11-21 1989-03-21 Bell Communications Research, Inc. Ingaas semiconductor structures
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array
KR100366046B1 (en) * 2000-06-29 2002-12-27 삼성전자 주식회사 Method of manufacturing avalanche phoetodiode
KR100790020B1 (en) 2005-09-26 2008-01-02 한국광기술원 Diffusion Method Used In Manufacturing Process Of Avalanche Photo Detector
WO2010057835A3 (en) * 2008-11-21 2010-09-16 Ketek Gmbh Radiation detector use of a radiation detector and method for producing a radiation detector

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