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JPS5678413A - Preparation of amorphous silicon - Google Patents

Preparation of amorphous silicon

Info

Publication number
JPS5678413A
JPS5678413A JP15245579A JP15245579A JPS5678413A JP S5678413 A JPS5678413 A JP S5678413A JP 15245579 A JP15245579 A JP 15245579A JP 15245579 A JP15245579 A JP 15245579A JP S5678413 A JPS5678413 A JP S5678413A
Authority
JP
Japan
Prior art keywords
hydrogen
silicon
evaporation source
noncrystalline
ionized hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15245579A
Other languages
Japanese (ja)
Other versions
JPS5837247B2 (en
Inventor
Masanari Shindo
Isao Myokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP54152455A priority Critical patent/JPS5837247B2/en
Priority to EP80304246A priority patent/EP0029747A1/en
Publication of JPS5678413A publication Critical patent/JPS5678413A/en
Publication of JPS5837247B2 publication Critical patent/JPS5837247B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prepare noncrystalline silicon readily having improved performance as a semiconductor material and given properties, by vaporizing Si from a Si evaporation source under ionized hydrogen-containing atmosphere so that Si is deposited on the surface of a substrate. CONSTITUTION:The bell-jar 1 is evacuated, a high-purity hydrogen gas is passed through the hydrogen discharge tube 4, and the formed ionized hydrogen is introduced into the bell-jar 1. The Si evaporation source 5 is heated under the ionized hydrogen atmosphere and Si vapor is generated. The Si vapor passes through a space wherein the ionized hydrogen exists and is deposited on the base plate 7. The ionized hydrogen is introduced into silicon during the flight of the silicon vapor or deposition, the dangling bond of silicon is hindered by hydrogen, noncrystalline Si is formed on the surface of the base plate 7. An N type or P type noncrystalline Si can also be prepared by vaporizing a doping agent from the evaporation source a for the doping agent.
JP54152455A 1979-11-27 1979-11-27 Manufacturing method of amorphous silicon Expired JPS5837247B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP54152455A JPS5837247B2 (en) 1979-11-27 1979-11-27 Manufacturing method of amorphous silicon
EP80304246A EP0029747A1 (en) 1979-11-27 1980-11-26 An apparatus for vacuum deposition and a method for forming a thin film by the use thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54152455A JPS5837247B2 (en) 1979-11-27 1979-11-27 Manufacturing method of amorphous silicon

Publications (2)

Publication Number Publication Date
JPS5678413A true JPS5678413A (en) 1981-06-27
JPS5837247B2 JPS5837247B2 (en) 1983-08-15

Family

ID=15540886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54152455A Expired JPS5837247B2 (en) 1979-11-27 1979-11-27 Manufacturing method of amorphous silicon

Country Status (1)

Country Link
JP (1) JPS5837247B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855327A (en) * 1981-09-26 1983-04-01 Konishiroku Photo Ind Co Ltd Semiconductor material and its manufacture
JPS5996721A (en) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd Manufacture of thin film semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855327A (en) * 1981-09-26 1983-04-01 Konishiroku Photo Ind Co Ltd Semiconductor material and its manufacture
JPH0239087B2 (en) * 1981-09-26 1990-09-04 Konishiroku Photo Ind
JPS5996721A (en) * 1982-11-25 1984-06-04 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPH0131289B2 (en) * 1982-11-25 1989-06-26 Sekisui Chemical Co Ltd

Also Published As

Publication number Publication date
JPS5837247B2 (en) 1983-08-15

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