JPS5536924A - Manufacturing of mn-bi thin film - Google Patents
Manufacturing of mn-bi thin filmInfo
- Publication number
- JPS5536924A JPS5536924A JP10835878A JP10835878A JPS5536924A JP S5536924 A JPS5536924 A JP S5536924A JP 10835878 A JP10835878 A JP 10835878A JP 10835878 A JP10835878 A JP 10835878A JP S5536924 A JPS5536924 A JP S5536924A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- group
- vapor
- spouted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To manufacture such thin film as is surpassing in evenness, stability, reproducibility and also high in practicability by ionizing a part of the atom constituting an atomic group and projecting it to vacuum vaporization onto a substrate. CONSTITUTION:Solid Mn 12 and Bi 13 are put in closed crucibles 11A, 11B in a high vaccum of bell jar respectively, and the crucibles 11A, 11B are heated up to a given temperature to vaporize Mn 12 and Bi 13. The vapor is then spouted through jet holes 14A, 14B into the bell jar. Vapors of Mn 12 and Bi 13 are lumped to a group by supercooling phenomenon according to adiabatic expansion. Then, the vapor is spouted onto a substrate 15 by a large kinetic energy arising at injecting the lumpish group, the atom constituting a cruster is spread on the surface of the substrate 15, and atoms of Mn and Bi are spattered on the substrate 15 to form an Mn-Bi thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10835878A JPS5536924A (en) | 1978-09-04 | 1978-09-04 | Manufacturing of mn-bi thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10835878A JPS5536924A (en) | 1978-09-04 | 1978-09-04 | Manufacturing of mn-bi thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5536924A true JPS5536924A (en) | 1980-03-14 |
Family
ID=14482693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10835878A Pending JPS5536924A (en) | 1978-09-04 | 1978-09-04 | Manufacturing of mn-bi thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5536924A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63171869A (en) * | 1987-01-08 | 1988-07-15 | Canon Inc | Formation of thin bismuth titanate film |
JP2004047452A (en) * | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | Apparatus for manufacture |
US8110509B2 (en) | 2002-05-17 | 2012-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light emitting devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49120198A (en) * | 1973-03-12 | 1974-11-16 |
-
1978
- 1978-09-04 JP JP10835878A patent/JPS5536924A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49120198A (en) * | 1973-03-12 | 1974-11-16 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63171869A (en) * | 1987-01-08 | 1988-07-15 | Canon Inc | Formation of thin bismuth titanate film |
JP2004047452A (en) * | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | Apparatus for manufacture |
US8110509B2 (en) | 2002-05-17 | 2012-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light emitting devices |
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