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JPS5536924A - Manufacturing of mn-bi thin film - Google Patents

Manufacturing of mn-bi thin film

Info

Publication number
JPS5536924A
JPS5536924A JP10835878A JP10835878A JPS5536924A JP S5536924 A JPS5536924 A JP S5536924A JP 10835878 A JP10835878 A JP 10835878A JP 10835878 A JP10835878 A JP 10835878A JP S5536924 A JPS5536924 A JP S5536924A
Authority
JP
Japan
Prior art keywords
substrate
thin film
group
vapor
spouted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10835878A
Other languages
Japanese (ja)
Inventor
Kaoru Yamanaka
Toshinori Takagi
Kakuei Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP10835878A priority Critical patent/JPS5536924A/en
Publication of JPS5536924A publication Critical patent/JPS5536924A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To manufacture such thin film as is surpassing in evenness, stability, reproducibility and also high in practicability by ionizing a part of the atom constituting an atomic group and projecting it to vacuum vaporization onto a substrate. CONSTITUTION:Solid Mn 12 and Bi 13 are put in closed crucibles 11A, 11B in a high vaccum of bell jar respectively, and the crucibles 11A, 11B are heated up to a given temperature to vaporize Mn 12 and Bi 13. The vapor is then spouted through jet holes 14A, 14B into the bell jar. Vapors of Mn 12 and Bi 13 are lumped to a group by supercooling phenomenon according to adiabatic expansion. Then, the vapor is spouted onto a substrate 15 by a large kinetic energy arising at injecting the lumpish group, the atom constituting a cruster is spread on the surface of the substrate 15, and atoms of Mn and Bi are spattered on the substrate 15 to form an Mn-Bi thin film.
JP10835878A 1978-09-04 1978-09-04 Manufacturing of mn-bi thin film Pending JPS5536924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10835878A JPS5536924A (en) 1978-09-04 1978-09-04 Manufacturing of mn-bi thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10835878A JPS5536924A (en) 1978-09-04 1978-09-04 Manufacturing of mn-bi thin film

Publications (1)

Publication Number Publication Date
JPS5536924A true JPS5536924A (en) 1980-03-14

Family

ID=14482693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10835878A Pending JPS5536924A (en) 1978-09-04 1978-09-04 Manufacturing of mn-bi thin film

Country Status (1)

Country Link
JP (1) JPS5536924A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171869A (en) * 1987-01-08 1988-07-15 Canon Inc Formation of thin bismuth titanate film
JP2004047452A (en) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd Apparatus for manufacture
US8110509B2 (en) 2002-05-17 2012-02-07 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light emitting devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120198A (en) * 1973-03-12 1974-11-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120198A (en) * 1973-03-12 1974-11-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171869A (en) * 1987-01-08 1988-07-15 Canon Inc Formation of thin bismuth titanate film
JP2004047452A (en) * 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd Apparatus for manufacture
US8110509B2 (en) 2002-05-17 2012-02-07 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light emitting devices

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