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JPS5654434A - Radiation and far ultraviolet ray sensitive positive type resist method - Google Patents

Radiation and far ultraviolet ray sensitive positive type resist method

Info

Publication number
JPS5654434A
JPS5654434A JP12994879A JP12994879A JPS5654434A JP S5654434 A JPS5654434 A JP S5654434A JP 12994879 A JP12994879 A JP 12994879A JP 12994879 A JP12994879 A JP 12994879A JP S5654434 A JPS5654434 A JP S5654434A
Authority
JP
Japan
Prior art keywords
monomer
radiation
positive type
formula
far ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12994879A
Other languages
Japanese (ja)
Other versions
JPH0119135B2 (en
Inventor
Motoyasu Saito
Nobuyuki Watamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kohjin Holdings Co Ltd
Kojin Co Ltd
Original Assignee
Kohjin Holdings Co Ltd
Kojin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kohjin Holdings Co Ltd, Kojin Co Ltd filed Critical Kohjin Holdings Co Ltd
Priority to JP12994879A priority Critical patent/JPS5654434A/en
Publication of JPS5654434A publication Critical patent/JPS5654434A/en
Publication of JPH0119135B2 publication Critical patent/JPH0119135B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To obtain a resist with high resolution and high sensitivity by using a polymer having a specified mol. wt. range and obtd. by the redox emulsion polymn. of one or two kinds of α-substituted acrylate monomers or such a monomer and other specified monomer.
CONSTITUTION: A monomer or a mixture of two kinds of monomers represented by formula I ( where R1 is CH3, halogen or CN and R2 is H, 1W5C alkyl or 3W6C cycloalkyl) or a mixture of a monomer represented by formula I and a monomer represented by formula II (where R3 is H or Cl and R4 is Cl or CN) is emulsion polymerized in the presence of a redox polymn. initiator to prepare a homo- or copolymer having 0.6W7 millions average mol. wt. The polymer is then subjected to multistage filtration to finally obtain the filtrate of a 1μ filter. The filtrate is applied to a silicon wafer, dried, heat treated, irradiated with radiation or far ultraviolet rays, and developed. Thus, a positive type resist with high sensitivity and high resolution is obtd.
COPYRIGHT: (C)1981,JPO&Japio
JP12994879A 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method Granted JPS5654434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12994879A JPS5654434A (en) 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12994879A JPS5654434A (en) 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method

Publications (2)

Publication Number Publication Date
JPS5654434A true JPS5654434A (en) 1981-05-14
JPH0119135B2 JPH0119135B2 (en) 1989-04-10

Family

ID=15022388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12994879A Granted JPS5654434A (en) 1979-10-11 1979-10-11 Radiation and far ultraviolet ray sensitive positive type resist method

Country Status (1)

Country Link
JP (1) JPS5654434A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118240A (en) * 1980-09-29 1982-07-23 Siemens Ag Manufacture of resist structural body
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPH01217341A (en) * 1988-02-25 1989-08-30 Toppan Printing Co Ltd Pattern forming method of positive type electron beam resist
JPH022564A (en) * 1988-06-15 1990-01-08 Toagosei Chem Ind Co Ltd Positive type electron beam resist
JPH0258060A (en) * 1988-08-24 1990-02-27 Toagosei Chem Ind Co Ltd Positive type resist
JPH02113253A (en) * 1988-10-24 1990-04-25 Toagosei Chem Ind Co Ltd Positive type resist
JPH02113256A (en) * 1988-10-24 1990-04-25 Toppan Printing Co Ltd Formation of positive type electron beam resist pattern
JPH02275462A (en) * 1989-04-17 1990-11-09 Toppan Printing Co Ltd Pattern forming method for electron beam resist
JPH0328851A (en) * 1988-05-24 1991-02-07 Toppan Printing Co Ltd Method for forming electron beam resist pattern
JPH05289339A (en) * 1992-04-08 1993-11-05 Toppan Printing Co Ltd Positive electron beam resist
KR100557529B1 (en) * 2001-06-29 2006-03-03 주식회사 하이닉스반도체 Chemical Amplification Photoresist Monomer, Polymer Thereof and Photoresist Composition Containing It
JP2006525295A (en) * 2003-04-30 2006-11-09 テート アンド ライル パブリック リミテッド カンパニー Improved crystal form of sucralose and process for producing the same
WO2014141876A1 (en) * 2013-03-15 2014-09-18 富士フイルム株式会社 Pattern forming method, active light-sensitive or radiation-sensitive resin composition for organic solvent development used in same, method for producing active light-sensitive or radiation-sensitive resin composition for organic solvent development, method for manufacturing electronic device, and electronic device

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0149935B2 (en) * 1980-09-29 1989-10-26 Siemens Ag
JPS57118240A (en) * 1980-09-29 1982-07-23 Siemens Ag Manufacture of resist structural body
JPS57196232A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> High sensitive and positive type resist
JPH01217341A (en) * 1988-02-25 1989-08-30 Toppan Printing Co Ltd Pattern forming method of positive type electron beam resist
JPH0328851A (en) * 1988-05-24 1991-02-07 Toppan Printing Co Ltd Method for forming electron beam resist pattern
JPH022564A (en) * 1988-06-15 1990-01-08 Toagosei Chem Ind Co Ltd Positive type electron beam resist
JPH0258060A (en) * 1988-08-24 1990-02-27 Toagosei Chem Ind Co Ltd Positive type resist
JPH02113253A (en) * 1988-10-24 1990-04-25 Toagosei Chem Ind Co Ltd Positive type resist
JPH02113256A (en) * 1988-10-24 1990-04-25 Toppan Printing Co Ltd Formation of positive type electron beam resist pattern
JPH02275462A (en) * 1989-04-17 1990-11-09 Toppan Printing Co Ltd Pattern forming method for electron beam resist
JPH05289339A (en) * 1992-04-08 1993-11-05 Toppan Printing Co Ltd Positive electron beam resist
KR100557529B1 (en) * 2001-06-29 2006-03-03 주식회사 하이닉스반도체 Chemical Amplification Photoresist Monomer, Polymer Thereof and Photoresist Composition Containing It
JP2006525295A (en) * 2003-04-30 2006-11-09 テート アンド ライル パブリック リミテッド カンパニー Improved crystal form of sucralose and process for producing the same
JP4809763B2 (en) * 2003-04-30 2011-11-09 テート アンド ライル テクノロジー リミテッド Improved crystal form of sucralose and process for producing the same
JP2011225591A (en) * 2003-04-30 2011-11-10 Tate & Lyle Technology Ltd Improved crystalline form of sucralose, and method for manufacturing the same
WO2014141876A1 (en) * 2013-03-15 2014-09-18 富士フイルム株式会社 Pattern forming method, active light-sensitive or radiation-sensitive resin composition for organic solvent development used in same, method for producing active light-sensitive or radiation-sensitive resin composition for organic solvent development, method for manufacturing electronic device, and electronic device
JP2014178566A (en) * 2013-03-15 2014-09-25 Fujifilm Corp Pattern forming method, active light-sensitive or radiation-sensitive resin composition for organic solvent development used in the same, method for producing active light-sensitive or radiation-sensitive resin composition, method for producing electronic device, and electronic device
TWI594077B (en) * 2013-03-15 2017-08-01 富士軟片股份有限公司 Pattern forming method, and manufacturing method of electronic device

Also Published As

Publication number Publication date
JPH0119135B2 (en) 1989-04-10

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