[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS55147624A - Ionized radiation sensitive positive type resist - Google Patents

Ionized radiation sensitive positive type resist

Info

Publication number
JPS55147624A
JPS55147624A JP5559179A JP5559179A JPS55147624A JP S55147624 A JPS55147624 A JP S55147624A JP 5559179 A JP5559179 A JP 5559179A JP 5559179 A JP5559179 A JP 5559179A JP S55147624 A JPS55147624 A JP S55147624A
Authority
JP
Japan
Prior art keywords
resist
copolymer
monomer
homopolymer
radiation sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5559179A
Other languages
Japanese (ja)
Inventor
Yuzo Shimazaki
Hideo Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP5559179A priority Critical patent/JPS55147624A/en
Publication of JPS55147624A publication Critical patent/JPS55147624A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide enhanced heat resistance, ion etching resistance and resolving power and obtain a high sensitivity resist by using a homopolymer or a copolymer of specified malonic acid esters or a copolymer of the monomer and acrylic acid type ester.
CONSTITUTION: A homopolymer or a copolymer of monomers represented by formula I (where each of R1 and R2 is 1W4C alkyl) or a copolymer of the monomer and a monomer represented by formual II [where R3 is CH3, CN, CONH2, F, Cl or Br and R4 is 1W4C (halogen-substituted) alkyl] is dissolved in a solvent to prepare a resist soln. This soln. is coated onto a silicon wafer and prebaked to form a resist film, which is then irradiated with radiation such as soft X-rays and developed to give a resist pattern with superior heat resistance. Accordingly, this resist is suitable for use in manufacture of a semiconductor, a photomask, etc.
COPYRIGHT: (C)1980,JPO&Japio
JP5559179A 1979-05-07 1979-05-07 Ionized radiation sensitive positive type resist Pending JPS55147624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5559179A JPS55147624A (en) 1979-05-07 1979-05-07 Ionized radiation sensitive positive type resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5559179A JPS55147624A (en) 1979-05-07 1979-05-07 Ionized radiation sensitive positive type resist

Publications (1)

Publication Number Publication Date
JPS55147624A true JPS55147624A (en) 1980-11-17

Family

ID=13002987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5559179A Pending JPS55147624A (en) 1979-05-07 1979-05-07 Ionized radiation sensitive positive type resist

Country Status (1)

Country Link
JP (1) JPS55147624A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271254A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Radiation sensitive positive type resist having high resolution
JP2017527668A (en) * 2014-09-08 2017-09-21 シラス・インコーポレイテッド Polymers comprising one or more 1,1-disubstituted alkene compounds and polymer compositions thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63271254A (en) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd Radiation sensitive positive type resist having high resolution
JP2017527668A (en) * 2014-09-08 2017-09-21 シラス・インコーポレイテッド Polymers comprising one or more 1,1-disubstituted alkene compounds and polymer compositions thereof

Similar Documents

Publication Publication Date Title
JPS5518638A (en) Ionized radiation sensitive positive type resist
JPS5290269A (en) Forming method for fine resist patterns
JPS5511217A (en) Pattern forming method using radiation sensitive high polymer
JPS5466829A (en) Pattern formation materil
JPS54116227A (en) Formation method for positive type resist image
JPS55147624A (en) Ionized radiation sensitive positive type resist
JPS5466776A (en) Fine pattern forming method
JPS57202534A (en) Negative type resist composition
JPS5466122A (en) Pattern formation material
JPS5518673A (en) Ionized radiation sensitive negative type resist
JPS5653114A (en) Preparation of polymeric material for positive resist sensitive to radiation and far ultraviolet rays
JPS54116226A (en) Formation method for positive type resist image
JPS5515149A (en) Forming method of resist for microfabrication
JPS5324782A (en) Forming method of high molecular film patterns by negative resist
JPS57202535A (en) Formation of negative resist pattern
JPS56137348A (en) Negative type ionized radiation sensitive resist
JPS5558211A (en) Positive type radiation-sensitive composition and its solution
JPS54145127A (en) Pattern formation material
JPS56114943A (en) Negative type resist material for electron beam
JPS54138433A (en) Photographic elements for color diffusion transfer process
JPS5552051A (en) Radiation resist and formation method for radiation resist pattern
JPS55134845A (en) Electron beam resist
JPS5639537A (en) Ionized radiation sensitive resist
JPS5476136A (en) Resist material for microprocessing
JPS53114677A (en) Processing method for resist